S 239 P Search Results

SW-419

Contextual Info: jytiK Application Note S-Parameter Data for SW-239 SPDT , SW-419 (SP4T) AT-210 and AT-230 (Digital Attenuators) M522 SW-239 S-Parameter Data S21/M log MAG 1 dB/ REF OdB CH2 Scale: 1 dB/d V S21/M log MAG 2: -0.5586 dB 10 d B /REF OdB 3:-14.215 dB 200C 000 000 MHz

VL99

Abstract: AN239 R28-27 V244 AN-239
Contextual Info: AN239 ic A N 239 TV V ideo IF Combination and Sound I F Combination I #5 S /D e sc rip tio n AN 239 t±, X n m f f e f r k m i & Z t L X ' . ' i - t ' , m % iF ig i , lE o m M if r m m m z m iia e & A F T fflif-v 1 T±g ipI0!«I F J fiH E Ii# "a j B H i j S W i l s M

Contextual Info: ADE-208-239 Z 1SS199 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Rev. 0 Dec. 1994 Outline Features • Detection efficiency is very good. • Small temperature coefficient. • S m a ll g la s s p a c k a g e (M H D ) e n a b le s e asy

Contextual Info: 2 4 3 5 7 6 — l X 239 S i g n a l K o n t a k t e 239 signal contacts Kontaktanordnung contact arrangement 98 96 9S29° 86 82 nn 78 7 4 ^ 7 0 , n 66, 62, A 84 80 76 72 68 64 60 58 56 54 52 50 4 8 46 96x 2,5 02,75 i_n O sJ ♦0.05 2 □ = Kon ta k tp o sitio n nicht belegt

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

AF239

Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
Contextual Info: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz

SCR POWER CONTROL

Abstract: DS1239 DS1236 DS1239-5
Contextual Info: DS1239 DALLAS ds1Chip 239 MicroManager s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • Provides necessary control for start up and shutdown of power supply from keyboard vbat [ v cco [ vcc[ • Holds microprocessor in check during power transients 16

GR-253

Abstract: TRCV012G5 TRCV012G7 TTRN012G5 TTRN012G7 D12N cdm 12.6 laser
Contextual Info: Advance Data Sheet March 2000 TTRN012G5 2.5 Gbits/s and TTRN012G7 (2.5 Gbits/s and 2.7 Gbits/s) Clock Synthesizer, 16:1 Data Multiplexer Features • TTRN012G5 supports OC-48/STM-16 data rate ■ TTRN012G7 supports: — OC-48/STM-16 data rate — RS (255, 239) forward error correction (FEC)

GR-253

Abstract: TRCV012G5 TRCV012G7 TTRN012G5 TTRN012G7 ast0
Contextual Info: Advance Data Sheet February 2000 TRCV012G5 2.5 Gbits/s and TRCV012G7 2.7 Gbits/s Limiting Amplifier, Clock Recovery, 1:16 Data Demultiplexer Features • TRCV012G5 supports OC-48/STM-16 data rate ■ TRCV012G7 supports: — OC-48/STM-16 data rate — RS 255, 239 forward error correction (FEC)

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: UHF UHF 7 U H F-Einbau buchse m it Flan sch UHF Panel Socket B e s te ll-N r. M IL -S td . E in b a u m a B A n m erku n ge n J01041B0632 SO-239 Z08 Korper aus Messing brass body Order Nr. 8 MIL-Std. Mount, dim. Remarks UH F-Kupplung UHF Adaptor B e s te ll-N r.

7538PC

Abstract: 7539P 5520 7534 5538DM 5538FM 5539DM 7538DC 7539DC 7539PC
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • 5520/7520 SERIES PROPAGATION DELAY TIM E 7628/29. 7538/39, 75238/239 TEST C IR C U IT 288 0 * _ L ^ -O OUT A -O O U T E C l * 15 pF S E E N O T E C ) C L « 15 pF 1 (S E E N O T E CJ — 9-^ VOLTA GE WAVEFORMS r

ECF86

Abstract: 7hg8 LTS 220 ScansU9X21
Contextual Info: R e c e iv in g T u b e s 239 Color Television Type VHF OSCILLATOR and MIXER 6HG8/ECF86 4HG8, 5HG8/LCF86, 7HG8/PCF86, 8HG8 M edium M u Triode and Sharp Cutoff Pentode C o n s tru c tio n .M in ia tu r e T -6'/j B ase .B u tto n 9 P in , E9-1

TL431C

Abstract: TL-131C tl131C tl131cp tl131 m431 TL431CLP TL431MJG TL431I TL431IP
Contextual Info: - 239 T ¡ S f f iiS tR S -V > h • W=>r; R K i 5 2.5V • *5£#s 3 6 V to S H T * I S ^ T - # 5 . Ik 37V 2 y - KWEE -1 0 0 ~ + 1 5 0 m A (* y - K * * ) : -5 5 ' - + 1 2 5 t (TL431M) -4 0 ' -+85T; (TL431I) - 2 0 - -+85T; (TL431C) - 6 5 ' -+ 1 5 0 ‘C

74LS

Abstract: MV74SC137 MV74SC138 MV74SC139 MV74SC237 MV74SC238 MV74SC239
Contextual Info: MV74SC137/138/139/237/238/239 A FLESSE Y W S e m ico n d u cto rs. CMOS ADVANCE INFORMATION Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production' status. Details given may, therefore, change without notice although we would expect this performance data to

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

Contextual Info: M O B I L E PO/MHW S e r e s The PO series is based on the standard U H F connector, allow ing it to m atch with any SO -239 female connector or m ount. • D C grounded ■ PO fits BSA Series ■ Recom m ended only w ith a suitable ground plane ■ Standard black base w ith chrom e whip;

Contextual Info: 13 12 M A T E R IA L S BODY AND 10 FINISH ES BRASS PLATED GOLD CENTER CONTACT PLATED GOLD IN S U LA T O R B ER YLLIU M COPPER 6,08 r REF .259 TEFLON 15.10 „ REF • 594 .142 R E F 4 PLACES r u -R E F .0 5 0 1.00 5Q^ REF QMA JAC K IN T E R F A C E .239 4 PLACES

Contextual Info: TAIWAN LITON ELECTRONIC ‘ITE D ', LITEM ï T-l 3 m m • SSBSb^S S O L I D D G 0 3 4 b 0 “¡5 7 ■ T L I T S T A T E L T L -209 R E D LTÌ .-219 B R I G H T R E D L T L -229 EFFICIENCY R E D L A M P S L T L -239 G R E E N L T L -259 Y E L L O W U\-z\

ECF86

Abstract: 7hg8 6HG8 PCF86 5hg8 Receiving Tubes pcf86 tube 12H12
Contextual Info: 239 Receiving Tubes C o lo r T e le v is io n Type VHF OSCILLATOR and MIXER 6HG8/ECF86 4HG8, 5HG8/LCF86, 7HG8/PCF86, 8HG8 Medium M u Triode and Sharp Cutoff Pentode C o n s t ru c t io n . M in ia t u r e T -6 '/j B a se . B u tto n 9 P in, E9-1

74HC239

Abstract: C-239
Contextual Info: SN 54H C 239, SN74H C239 DUAL 2-LINE TO 4-LINE DECODERS/DEMULTIPLEXERS 0 2 8 0 4 , M A R C H 1 9 8 4 -R E V IS E D JUNE 1 9 8 9 Designed Specifically for High-Speed Memory Decoders and Data Transmission Systems SN 64H C239 . . . J PACKAG E S N 7 4 H C 2 3 9 . . 0 * OR N P A C K A G E

Contextual Info: TA IW AN LIT ON E L E C T R O N I C litem i M IE D 0 0 3 5 1 ^ 5 0 0 0 3 2 4 Û STÔ • T L I T : INFRARED EMITTING DIODE LTE-239/239C - >' ' T 4 M 3 FEATURES • SELECTED TO SPECIFIC O N -LIN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y RANGES. • H IG H POWER O UT PUT.

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2