S 239 P Search Results

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

SW-419

Contextual Info: jytiK Application Note S-Parameter Data for SW-239 SPDT , SW-419 (SP4T) AT-210 and AT-230 (Digital Attenuators) M522 SW-239 S-Parameter Data S21/M log MAG 1 dB/ REF OdB CH2 Scale: 1 dB/d V S21/M log MAG 2: -0.5586 dB 10 d B /REF OdB 3:-14.215 dB 200C 000 000 MHz

LM139A

Abstract: LM239A LM339A M139 lm339a schematic "Op Amp" lm339 lm2901 application note LM339 APPLICATIONS zero crossing lm339 pin diagram LM2901
Contextual Info: w # S G S -T H O M S O N LM 239/A . LOW POWER QUAD VOLTAGE COMPARATORS • WIDE SINGLE SUPPLY VOLTAGE RANGE OR DUAL SUPPLIES FOR ALL DEVICES : +2V TO +36VOR ±1V TO ±18V ■ VERY LOW SUPPLY CURRENT 1.1mA INDEPENDENT OF SUPPLY VOLTAGE (1.4mW/comparator at +5V)

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

Contextual Info: 2 4 3 5 7 6 — l X 239 S i g n a l K o n t a k t e 239 signal contacts Kontaktanordnung contact arrangement 98 96 9S29° 86 82 nn 78 7 4 ^ 7 0 , n 66, 62, A 84 80 76 72 68 64 60 58 56 54 52 50 4 8 46 96x 2,5 02,75 i_n O sJ ♦0.05 2 □ = Kon ta k tp o sitio n nicht belegt

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

tmc239

Abstract: IR2101 full bridge Siliconix SI 5504 full bridge with ir2101 motorola automotive mos transistor motor driver full bridge 10A motor driver full bridge 10A ir2101 tsop6 marking 345 SRA Capacitors LPCC28
Contextual Info: TMC239 DATA SHEET V1.00 / Apr. 24th, 2003 1 TMC 239 – DATA SHEET High Current Microstep Stepper Motor Driver with protection / diagnosis and SPI Interface TRINAMIC M I C R O C H I P S TRINAMIC Microchips GmbH Deelbögenkamp 4C D – 22297 Hamburg GERMANY

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: UHF UHF 7 U H F-Einbau buchse m it Flan sch UHF Panel Socket B e s te ll-N r. M IL -S td . E in b a u m a B A n m erku n ge n J01041B0632 SO-239 Z08 Korper aus Messing brass body Order Nr. 8 MIL-Std. Mount, dim. Remarks UH F-Kupplung UHF Adaptor B e s te ll-N r.

7538PC

Abstract: 7539P 5520 7534 5538DM 5538FM 5539DM 7538DC 7539DC 7539PC
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • 5520/7520 SERIES PROPAGATION DELAY TIM E 7628/29. 7538/39, 75238/239 TEST C IR C U IT 288 0 * _ L ^ -O OUT A -O O U T E C l * 15 pF S E E N O T E C ) C L « 15 pF 1 (S E E N O T E CJ — 9-^ VOLTA GE WAVEFORMS r

ECF86

Abstract: 7hg8 LTS 220 ScansU9X21
Contextual Info: R e c e iv in g T u b e s 239 Color Television Type VHF OSCILLATOR and MIXER 6HG8/ECF86 4HG8, 5HG8/LCF86, 7HG8/PCF86, 8HG8 M edium M u Triode and Sharp Cutoff Pentode C o n s tru c tio n .M in ia tu r e T -6'/j B ase .B u tto n 9 P in , E9-1

PM139Y

Abstract: PM139 PM139AY PM239P LM139 LM139A PM139ARC
Contextual Info: Quad Low-Power Voltage Comparators PM-139/PM-139A/PM-239 A N A LO G D E V IC E S FEA TUR ES GENERAL DESCRIPTION • • • • • • • • The PM-139 has four independent voltage comparators, each with precision DC specifications. Low offset voltage, bias cur­

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

TL431C

Abstract: TL-131C tl131C tl131cp tl131 m431 TL431CLP TL431MJG TL431I TL431IP
Contextual Info: - 239 T ¡ S f f iiS tR S -V > h • W=>r; R K i 5 2.5V • *5£#s 3 6 V to S H T * I S ^ T - # 5 . Ik 37V 2 y - KWEE -1 0 0 ~ + 1 5 0 m A (* y - K * * ) : -5 5 ' - + 1 2 5 t (TL431M) -4 0 ' -+85T; (TL431I) - 2 0 - -+85T; (TL431C) - 6 5 ' -+ 1 5 0 ‘C

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

Contextual Info: M O B I L E PO/MHW S e r e s The PO series is based on the standard U H F connector, allow ing it to m atch with any SO -239 female connector or m ount. • D C grounded ■ PO fits BSA Series ■ Recom m ended only w ith a suitable ground plane ■ Standard black base w ith chrom e whip;

Contextual Info: 13 12 M A T E R IA L S BODY AND 10 FINISH ES BRASS PLATED GOLD CENTER CONTACT PLATED GOLD IN S U LA T O R B ER YLLIU M COPPER 6,08 r REF .259 TEFLON 15.10 „ REF • 594 .142 R E F 4 PLACES r u -R E F .0 5 0 1.00 5Q^ REF QMA JAC K IN T E R F A C E .239 4 PLACES

Contextual Info: TAIWAN LITON ELECTRONIC ‘ITE D ', LITEM ï T-l 3 m m • SSBSb^S S O L I D D G 0 3 4 b 0 “¡5 7 ■ T L I T S T A T E L T L -209 R E D LTÌ .-219 B R I G H T R E D L T L -229 EFFICIENCY R E D L A M P S L T L -239 G R E E N L T L -259 Y E L L O W U\-z\

ECF86

Abstract: 7hg8 6HG8 PCF86 5hg8 Receiving Tubes pcf86 tube 12H12
Contextual Info: 239 Receiving Tubes C o lo r T e le v is io n Type VHF OSCILLATOR and MIXER 6HG8/ECF86 4HG8, 5HG8/LCF86, 7HG8/PCF86, 8HG8 Medium M u Triode and Sharp Cutoff Pentode C o n s t ru c t io n . M in ia t u r e T -6 '/j B a se . B u tto n 9 P in, E9-1

b3170

Abstract: B 3170 schlenzig B3170V "halbleiterwerk frankfurt" electronica reihe B3371 LM 3171 B3171V electronica band
Contextual Info: »Uxe Strom­ versorgung Referenzquelle Le/stungs- und UberstromBegrenzung, Temperaturschutz verstarker electrónica • Band 239 KLAUS SCHLENZ1G D IE T E R JU N G D ie in te g r ie r te n S p a n n u n g s re g le r B3x7xV M ILITÄR V E R LA G D E R D EU T SC H E N D EM O K R A TISC H EN

television internal parts block diagram

Abstract: colour television block diagram television block diagram basic television block diagram Television Z90231 Z90233 Z90234 Z90239 Z9023X
Contextual Info: j P r e l im in a r y C u s t o m e r P r o c u r e m e n t S p e c if ic a t io n O N Z90231/233/234/239 Totally Logical Z 8 D ig it a l T e l e v is io n C o n t r o l l e r s FEATURES Device ROM (KB RAM (Bytes) I/O Lines1 Voltage Range Z90231 32(OTP)

74HC239

Abstract: C-239
Contextual Info: SN 54H C 239, SN74H C239 DUAL 2-LINE TO 4-LINE DECODERS/DEMULTIPLEXERS 0 2 8 0 4 , M A R C H 1 9 8 4 -R E V IS E D JUNE 1 9 8 9 Designed Specifically for High-Speed Memory Decoders and Data Transmission Systems SN 64H C239 . . . J PACKAG E S N 7 4 H C 2 3 9 . . 0 * OR N P A C K A G E

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

Contextual Info: TA IW AN LIT ON E L E C T R O N I C litem i M IE D 0 0 3 5 1 ^ 5 0 0 0 3 2 4 Û STÔ • T L I T : INFRARED EMITTING DIODE LTE-239/239C - >' ' T 4 M 3 FEATURES • SELECTED TO SPECIFIC O N -LIN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y RANGES. • H IG H POWER O UT PUT.