S 239 L IO Search Results

1N2970B

Abstract: 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B
Contextual Info: 6 DO-4 - CONTINUED SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 T A B L E 1 A - S T A N D A R D D E V IC E E L E C T R IC A L S P E C IF IC A T IO N S JEDEC PAR T NUM BER SUSSEX PA RT

Contextual Info: 13 12 10 M A T E R I A L S A N D FINISHES BODY BRASS PLATED GOLD CENTER CONTACT PLATED B E R Y L L IU M CO P P E R GOLD IN SU LATO R 6.08 r REF .239 TEFLON 15.10 „ REF • 594 ^ R F F .142 R E F 4 PLACES r ^ REF 1.00 QMA JA CK 5Q^ INTERFAC E REF .239 4 PLACES

an239

Contextual Info: AN239 AN 239 x H i t t « I F * * , s P I F * * , F M & M H S g - TV Video IF Combination and Sound IF Combination I ^ /D e scrip tio n AN 239 f ± , «Mil I F i f , [B]M«t?JS0i«A F T f f l i f - i . IJ T t f i | i i 0 S # ^ 5 * I F i f 1 101» F M ;f£ *0 i#

Contextual Info: 2 4 3 5 7 6 — l X 239 S i g n a l K o n t a k t e 239 signal contacts Kontaktanordnung contact arrangement 98 96 9S29° 86 82 nn 78 7 4 ^ 7 0 , n 66, 62, A 84 80 76 72 68 64 60 58 56 54 52 50 4 8 46 96x 2,5 02,75 i_n O sJ ♦0.05 2 □ = Kon ta k tp o sitio n nicht belegt

Contextual Info: TAIWAN LITON ELECTRONIC ‘ITE D ', LITEM ï T-l 3 m m • SSBSb^S S O L I D D G 0 3 4 b 0 “¡5 7 ■ T L I T S T A T E L T L -209 R E D LTÌ .-219 B R I G H T R E D L T L -229 EFFICIENCY R E D L A M P S L T L -239 G R E E N L T L -259 Y E L L O W U\-z\

television internal parts block diagram

Abstract: colour television block diagram television block diagram basic television block diagram Television Z90231 Z90233 Z90234 Z90239 Z9023X
Contextual Info: j P r e l im in a r y C u s t o m e r P r o c u r e m e n t S p e c if ic a t io n O N Z90231/233/234/239 Totally Logical Z 8 D ig it a l T e l e v is io n C o n t r o l l e r s FEATURES Device ROM (KB RAM (Bytes) I/O Lines1 Voltage Range Z90231 32(OTP)

7538PC

Abstract: 7539P 5520 7534 5538DM 5538FM 5539DM 7538DC 7539DC 7539PC
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • 5520/7520 SERIES PROPAGATION DELAY TIM E 7628/29. 7538/39, 75238/239 TEST C IR C U IT 288 0 * _ L ^ -O OUT A -O O U T E C l * 15 pF S E E N O T E C ) C L « 15 pF 1 (S E E N O T E CJ — 9-^ VOLTA GE WAVEFORMS r

television internal parts block diagram

Abstract: basic television block diagram Z90231 Z90233 Z90234 Z90239 Z9023X television internal parts CP00300-TVX0698
Contextual Info: P r e l im in a r y D a t a S h e e t D O _ i • N Z90231/233/234/239 Totally Logical Z 8 D ig it a l T e l e v is io n C o n t r o l l e r s FEATURES • One 14-bit Pulse Width Modulator • On-Chip Infrared (IR Capture Registers 4.5V to 5.5V • Four Channel 4-bit Analog-to-Digital Converter

Contextual Info: AN A L O G D E V I C E S / PHI HIV ÉbE D PMÌ • OfllbflOS 0 0 C H 3 2 1 3 ■ PM-139/PM-139A/PM-239 QUAD LOW-POWER _ VOLTAGE COMPARATORS Precision M onolithics Inc. ' " P ^ s - n J FEATURES G E N E R A L DESCRIPTION • Single or Dual Supply Operation

Contextual Info: Package Number 239 - 24-Lead SOIC |- $ - | .0 1 Q - 2 5 ( m ) I B ( M ) l IN D EX " AREA D E T A IL 1 BASE PLA N E D S E A T IN G PLAN E 12 ” A” —A1 1 uuuuuu MMMMM .0. T - | - -

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

Contextual Info: M O B I L E PO/MHW S e r e s The PO series is based on the standard U H F connector, allow ing it to m atch with any SO -239 female connector or m ount. • D C grounded ■ PO fits BSA Series ■ Recom m ended only w ith a suitable ground plane ■ Standard black base w ith chrom e whip;

Contextual Info: 13 12 M A T E R IA L S BODY AND 10 FINISH ES BRASS PLATED GOLD CENTER CONTACT PLATED GOLD IN S U LA T O R B ER YLLIU M COPPER 6,08 r REF .259 TEFLON 15.10 „ REF • 594 .142 R E F 4 PLACES r u -R E F .0 5 0 1.00 5Q^ REF QMA JAC K IN T E R F A C E .239 4 PLACES

Contextual Info: TA IW AN LIT ON E L E C T R O N I C litem i M IE D 0 0 3 5 1 ^ 5 0 0 0 3 2 4 Û STÔ • T L I T : INFRARED EMITTING DIODE LTE-239/239C - >' ' T 4 M 3 FEATURES • SELECTED TO SPECIFIC O N -LIN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y RANGES. • H IG H POWER O UT PUT.

40HF2

Abstract: s 239 l
Contextual Info: I n t e r n a t io n a l R e c t i f i e r D io d e s •FSM 2 Part Number Vrrm (V) lF(AV) « Tc (A) (”C) 50 Hz 60 Hz VFM 0 iXjFjAV) (A) Fax-onDenuod RthJC»C row) Notes Number 2 2 2 2 2 2 2 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.5 1.5 1.5 1.5 1.5 1.5 1.5 0.65 0.65

225 esm

Abstract: esm diodes BYX 13 400 R 4948 je 243 JEDEC to 243 REDRESSEMENT Diodes de redressement
Contextual Info: <CB 33 TO» 126) (C B 34) Fast recovery silicon rectifier diodes — trr 1 0 0 ns D iod es de redressement rapides au silicium — trr 1 00 ns v F 'fsm T (vj) Case Type V RRM <v> B o îtie r (°C ) IO < A t (A ) m ax Tease 1 0 0 ° C tp 10 m s (V) / *F (A )

transistor 400 volts.50 amperes

Abstract: CR5U-020 transistor 1000V transistor 600 volts.50 amperes UF4003 UF4004 UF4005 UF4006 UF4007 CR3U-010
Contextual Info: Rectifiers, Ultra Fast 1.0 to 8 Amperes 50 to 1000 Volts IO AMPS @ TA (oC) 1.0 3.0 5.0 75 55 55 30 150 175 8.0 @ TC (oC) IFSM (AMPS) 25 125 FULL PAK 1 1 CASE DO-41* DO-201AD 2 2 Single TO-220FP 2 LEAD VRRM (VOLTS) 50 UF4001 100 200 UF4002 UF4003 CR3U-010

Contextual Info: Rectifiers, Ultra Fast 1.0 to 8 Amperes 50 to 1000 Volts IO AMPS @ TA (oC) 1.0 3.0 5.0 75 55 55 30 150 175 8.0 @ TC (oC) IFSM (AMPS) 25 125 FULL PAK 1 1 CASE DO-41* DO-201AD 2 2 Single TO-220FP 2 LEAD VRRM (VOLTS) 50 UF4001 100 200 UF4002 UF4003 CR3U-010

1N4007GPP

Abstract: 1N5062 1N4385 1n4383
Contextual Info: Rectifiers, General Purpose 1.0 to 250 Amperes 50 to 1600 Volts IO AMPS 1.0 @ TA (oC) 75 75 55 100 100 IFSM (AMPS) 50 50 50 50 50 CASE DO-41* GPR-1A DO-41 Glass VRRM (VOLTS) 50 1N4001 1N4001GPP* 100 1N4002 1N4002GPP* 200 1N4003 1N4003GPP* 1N4245 1N3611

diode 1n5620

Abstract: 1N4007GPP 1N4384 CR60-020 1N4004 or 1N5404 1n5062 equivalent data sheet 1N5059 diode GT3180-01-A-DB transistor case To 106 1N4001GPP
Contextual Info: Rectifiers, General Purpose 1.0 to 250 Amperes 50 to 1600 Volts IO AMPS 1.0 @ TA (oC) 75 75 55 100 100 IFSM (AMPS) 50 50 50 50 50 CASE DO-41* GPR-1A DO-41 Glass VRRM (VOLTS) 50 1N4001 1N4001GPP* 100 1N4002 1N4002GPP* 200 1N4003 1N4003GPP* 1N4245 1N3611

1N4007GPP

Contextual Info: Rectifiers, General Purpose 1.0 to 250 Amperes 50 to 1600 Volts IO AMPS 1.0 @ TA (oC) 75 75 55 100 100 IFSM (AMPS) 50 50 50 50 50 CASE DO-41* GPR-1A DO-41 Glass VRRM (VOLTS) 50 1N4001 1N4001GPP* 100 1N4002 1N4002GPP* 200 1N4003 1N4003GPP* 1N4245 1N3611

6gu7

Abstract: 6gu7 tube TWIN TRIODE rs tube
Contextual Info: 6GU 7 TUMO-SOL TWIN T R IO D E M IN IA T U R E T Y P E O U T L I N E DRAW ING J E D E C 6-3 B A S IN G D IA G R A M JEDEC 9 LP FOR U S E IN M A T R I X I N G C I R C U I T S O F C O L O R T.V. R E C E I V E R S C O A T E D U N IP O T E N T IA L C A T H O D E

transistor tip 31c

Abstract: TIP 31 Transistor TIP 29 transistor tip 31 Texas Instruments TIP31C tip318 transistor DA 2688 TIP 31 EQUIVALENT TIP31B TIP31C
Contextual Info: TYPES TIP31. TIP31A. TIP31B, TIP31C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P J-1 F IE R A N D H IG H - S P E E D - S W IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W IT H T IP32, T IP 3 2 A , T IP 3 2 B , T IP 3 2 C

bd 125 equivalent

Abstract: TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP35 TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp
Contextual Info: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP36, TIP36A , TIP36B, TIP36C