S 202 K 0,5 Search Results

Contextual Info: Ô13bb71 00GSQ32 2S7 SKiiPPACK S K integrated intelligent Power P A CK 3-phase bridge with brake chopper SKiiP 202 G D L 120 + Driver 404 WT E/U 3) SKiiP 202 GDL 120 - 404 WT (E/U) Driver for 3-phase bridge and brake chopper Absolute Maximum Ratings 3-phase

Contextual Info: F-202-1 B K T -1 1 1 -0 1 -L -V B K T -1 2 5 - 0 5 - L -V SM T mm S P E C IFIC A T IO N S POLARIZED HEADER Shroud option available for „ blind mating M a te s w ith : BKS BKT SERIES ,00mm , .03937" pitch For complete specifications see www.samtec.com?BKT

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

BF859

Abstract: BF857 BF858
Contextual Info: t3E D • bb 53 ^ 2 4 OGVME'ìa bßT BF857 BF858 BF859 ISIC3 NAPC/PHILIPS SEniCONP FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC06 OR D A T A S H E E T SILICON PLANAR VIDEO OUTPUT TRANSISTORS N-P-N transistors in T O -202 plastic envelopes intended fo r video o u tp u t stages in black-and-w hite

5SV6

Abstract: 3A21N C67078-A1107-A2
Contextual Info: y L ôûd i> m ô23SbQS qomflû2 i m s i e s 14882 D T - 3 e? - / 3 88D BUZ 202 SIEMENS AKTIENÛESELLSCHAF -Main ratings N-Channel = 400 V Draln-source voltage ^3 = 11,5 A Continuous drain current Draln-source on-resistance ^DS on = 0,5 n Description C ase

Contextual Info: F-211-1 TM LSHM–150–01–L–DH–A–S–K–TR LSHM–130–01–F–DH–A–S–K–TR SYSTEM 0,50mm .0197" LSHM–120–01–L–RH–A–S–K–TR LSHM–120–01–L–DH–A–S–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: F-211-1 TM LSHM–150–01–L–DH–A–S–K–TR LSHM–130–01–F–DH–A–S–K–TR SYSTEM 0,50mm .0197" LSHM–120–01–L–RH–A–S–K–TR LSHM–120–01–L–DH–A–S–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: F-212 TM SYSTEM 0,50mm .0197" LSHM–150–01–L–DH–A–S–K–TR LSHM–130–01–F–DH–A–S–K–TR LSHM–120–01–L–RH–A–S–K–TR LSHM–120–01–L–DH–A–N–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: F-211-2 TM SYSTEM 0,50mm .0197" LSHM–150–01–L–DH–A–S–K–TR LSHM–130–01–F–DH–A–S–K–TR LSHM–120–01–L–RH–A–S–K–TR LSHM–120–01–L–DH–A–N–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: F-213 TM SYSTEM 0,50 mm .0197" LSHM–150–01–L–DH–A–S–K–TR LSHM–130–01–F–DH–A–S–K–TR LSHM–120–01–L–RH–A–S–K–TR LSHM–120–01–L–DH–A–N–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: F-214 Rev 11AUG14 TM LSHM–150–01–L–DH–A–S–K–TR SYSTEM LSHM–120–01–L–DH–A–N–K–TR (0,50 mm) .0197" LSHM–130–01–F–DH–A–S–K–TR LSHM–120–01–L–RH–A–S–K–TR LSHM-DH, LSHM-RH SERIES HIGH SPEED HERMAPHRODITIC STRIP

Contextual Info: SPECIFICATION CONTROL DRAWING ,390- ,005 ,001 FEMALE SOCKET ACCEPTS0,016/,Oil x ,100 MAX, LONG PIN 355 0,550 METAL 'BESS 2x 070 065 ,065 1. MATING 2. INTERFACE DIMENSIONS P e r M IL -S T D -348 Fig. 321.1 BMA PLUG ELECTRICAL DC TO 26.5 GHz SEE SHEET 3 FREQUENCY RANGE GHz -VSWR ( M A X . ) * -INSERTION LOSS (dB MAX.)

x050

Abstract: lshm
Contextual Info: F-211 LSHM–150–02.5–L–DV–A–N–K–TR LSHM–120–01–L–DH–A–S–K–TR TM 0,50mm .0197" LSHM SERIES LSHM–130–02.5–L–DV–A–S–K–TR SYSTEM LSHM–120–04.0–L–DV–A–N–K–TR HIGH SPEED HERMAPHRODITIC STRIP SPECIFICATIONS

lshm

Abstract: X050 Polymer
Contextual Info: F-210-1 LSHM–150–02.5–L–DV–A–N–K–TR LSHM–120–01–L–DH–A–S–K–TR TM 0,50mm .0197" LSHM SERIES LSHM–130–02.5–L–DV–A–S–K–TR SYSTEM LSHM–120–04.0–L–DV–A–N–K–TR HIGH SPEED HERMAPHRODITIC STRIP SPECIFICATIONS

Contextual Info: r REVISIONS DESCRIPTION REV acn 005, 01 o RELEASED 2 PLCS APPROVED JGH ,300 7,6 □-RING EM I/RFI GASKET 3V 1/6/03 R E V IS E D PER ECN 0 U 2 0-0 262-01 B 2,6 DATE K YLE .155 4,0 ,250 r- 0 6.4 .123 3,1 h ez: .018 0,5 Z 3 -I □ S P PLU G DIELECTRIC ,065

transistor c203

Abstract: bc 201 transistor transistor BC 176 bc 1602 l transistor BC 172 TRANSISTOR BC 203 transistor BC201 transistor bc 201 1602 siemens TRANSISTOR BC 173
Contextual Info: »•a i" 2SC D ■ 0235bDS 0 0 0 4 1 2 b PNP Silicon Transistors SIEMENS 1 WÊ S I Z G j - - 25C 04126 D “T * AKTIENGESELLSCHAF BC201 — BC203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and

Contextual Info: SPECIFICATION CONTROL DRAWING ,625 HEX ,500-28 UNEF-2A .46R ,437-28 UNEF-2A ,255 MIN, CABLE ENTRY 0,500 MIN. 687 HEX RECOMMENDED MOUNTING 1. MATING -a,15 IN TER FA CE DIMENSIONS P E R M IL -S T D -3 4 8 F ig . 3 1 3 .4 KTNC JA C K ). 2. ELECTRICAL DC TO 1 2 .5 GHz.

BD 202 transistors

Abstract: BD 204 B Scans-0010668 BD204 BD 203
Contextual Info: BD 202 * BD 204 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen A p p lic a tio n s : AF-output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak p o w e r • Hohe S trom verstärkung

ivo ne 202

Abstract: P535H IVO GmbH ivo irion Iskra relay BP 40 Diagramm R T F1200U IVO GmbH incremental encoder LEUZE ivo 202
Contextual Info: IVO IRION & VOSSELER COUNTERS • CO NTRO L UNITS • ENCODERS Operating Instructions Tachometer TA 202 Contents Page 1 Safety remarks 2 2 Getting to know the TA 202 3 2.1 Block diagramm of the TA 202 3 Connecting the TA 202 4 4 Connecting the supply voltage

Contextual Info: =W e9 S Pag H e Ro oir / Se TCE 201 à/to 204 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 TCE 252 à/to 254 MOLDED CERAMIC CAPACITORS CLASS 1 HAUTE TEMPERATURE HIGH TEMPERATURE Appellation commerciale / Commercial type Y L ± 0,5 W max. T ± 0,2 X ± 0,2 Ø - 0,05 + 10%

Contextual Info: Available Heatsinks Heatsink SEM IPA C K Length* Weight* Cooling mode Them lai resist,ance hea tsink air "Ithha °C /W SK K D 40 F S K M D 4 0 F SK K D 42 F SKM D 42 F SKNO 42 F SK K D 50 E SKND5Û E S K K D 105 F SKM D 105 F S K N D 1 0 5 F S K K D 115 F

Contextual Info: SURFACE MOUNT TANTALUM CAPACITORS SAH SERIES TANTALUM CHIP CAPACITORS RESISTORS VOLTAGE REGULATORS ELECTROLYTIC CAPACITORS MICA CAPACITORS FILM CAPACITORS CERAMIC CAPACITORS INTRODUCTION SAH SERIES MOLDED TANTALUM CHIP CAPACITORS ARE SPECIALLY DEVELOPED FOR HIGH HEAT RESISTANCE AND HIGH RELIABILITY. IDEAL

Contextual Info: SEMIKRON V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180; T case = 85 °C; 50 Hz) 48,5 A 207 A Ultrafast Epitaxial Diode Modules 100 SKKD 50 E 01 SKND 50 E 01 SKMD 202 E 01 SKND 202 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02

information applikation mikroelektronik

Abstract: mikroelektronik applikation applikation heft mikroelektronik DDR "halbleiterwerk frankfurt" VEB mikroelektronik A211D Mikroelektronik Information Applikation "Mikroelektronik" Heft valvo transistoren
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION KBD FT Inform ation-Applikation Aufbau, Eigenschaften und Anwendung des integrierten Aufnahmeund W iedergabeverstärkerSchaltkreises A 202 D M ikroelektronik Heft 4 veb Halbleiterwerk frankfurt/oder le itb e trie b im veb kom binat m ikroelektronik