S 1040 SMD Search Results

S 1040 smd

Abstract: 8239 Diode IR 8294 TEMT1000 TEMT1020 TEMT1030 TEMT1040 TSML1000 EC 1030
Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

Contextual Info: TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Photointerrupter

Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

Contextual Info: TEMT1000/1020/1030/1040 Vishay Telefunken Silicon Phototransistor Description TEMT1000 TEMT10.0 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in SMD package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only.

Contextual Info: TSMF1000/1020/1030/1040 Vishay Telefunken High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology molded in clear SMD package with dome lens. DH chip technology represents best performance for

encoder 9985

Abstract: 9985 angular encoder 9985 encoder S 1040 smd TSML1000 TSML1020 TSML1030 TSML1040 9985, encoder
Contextual Info: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for

Contextual Info: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for

CS0402-3N9-S

Contextual Info: SMD Wire Wound Ceramic Chip Inductors - CS 0402 Series Electrical Characteristics Part Number Inductance nH Tolerance (±%) Q Min 900MHz L Typ Q Typ 1.7GHz L Typ Q Typ SRF (GHz) Min Rdc (Ω) Max Irms (mA) Max CS0402-1N0□-S 1.0 10 / 5 16 1.02 77 1.02 69

MF1043S-1

Abstract: MF1043 MF1043S
Contextual Info: MF1043S-1 FOR GSM MOBILE TELEPHONE, Rx MF1043S-1 DESCRIPTION FEATURES MF1043S-1 TYPICAL CHARACTERISTICS This SAW filter for the receiving RF circuit of GSM mobile communication equipment operating at 935 MHz ~ 960 MHz. 1. SMD package insures small size, lightweight.

DIODE smd 4150

Abstract: S 1040 smd KRF7220
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7220 Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Symbol Rating Unit VDS -14 V Continuous Drain Current, VGS @ -4.5V @ Ta = 25

S 1040 smd

Abstract: DR354-0-433-T
Contextual Info: March 27, 2007 SMD INDUCTOR DR354-0 SERIES Features z z z z z SMD 0402 Chip Inductor, Low Profile Suitable for High Frequency Application Inductance Range from 1.0nH to 68nH Operating Temp. -40°C to +125°C Tinned Leads with Leaded Solder is Available note 4

Contextual Info: AN11222 BGA3018 - 1 GHz 18 dB gain wideband amplifier MMIC Rev. 2 — 8 January 2013 Application note Document information Info Content Keywords BGA3018, Evaluation board, CATV, Drop amplifier Abstract This application note describes the schematic and layout requirements

Contextual Info: AN11221 BGA3015 - 1 GHz 15 dB gain wideband amplifier MMIC Rev. 2 — 8 January 2013 Application note Document information Info Content Keywords BGA3015, Evaluation board, CATV, Drop amplifier Abstract This application note describes the schematic and layout requirements

Contextual Info: Document 198-1 Chip Inductors - 0402CS Series 1005 Continuing in our long tradition of innovation and leadership, Coilcraft introduced the industry’s first 0402 wirewound inductor. frequency; tight inductance tolerance; and excellent batch-to-batch consistency.

DA228K

Contextual Info: Data Sheet Switching Diode DA228K Applications Ultra high speed switching Dimensions Unit : mm Land size figure (Unit : mm) 1.9 －0.05 Features 1) Small mold type. (SMD3) 2) High reliability. 2.9±0.2 各リードとも Each lead has same dimension

Contextual Info: _PREMO CS0402 Leadless sm allest size inductor wound on high alum ina ceram ic bodies. High Q factor and self-resonance frequencies allow excellent operation in G SM frequencies, D E C T , cordless com m unications, wireless LANs, etc.

Contextual Info: Technical Data Sheet Top Infrared LED IR67-21C/TR8 Features Compatible with infrared and vapor phase reflow solder process. Low forward voltage. View angle 120° Pb free The product itself will remain within RoHS compliant version. Descriptions IR67-21C/TR8 is an infrared emitting diode in miniature SMD package

Contextual Info: AN11228 BGA301x Wideband Variable Gain Amplifier Application Rev. 1 — 22 October 2012 Application note Document information Info Content Keywords BGA3015, BGA3018, CATV, Line-up, VGA, Evaluation board Abstract This application note describes the schematic and layout requirements

10H150

Abstract: CDRH4D22NP-6R8NC
Contextual Info: SMD Power Inductor CDRH4D22 Description • Ferrite drum core construction. • Magnetically shielded. • L W H:5.0 5.0 2.4 mm Max. • Product weight: 0.2g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Dimension - [mm] ℃ ℃～

KTY82-150

Abstract: BLD 122 KTY82-1 Series MSA923 1937 sot23 el 1533 max 1786 STR 2367 941 3m 24 5077 50 110 861
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 KTY82-1 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 05 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors

Contextual Info: 1206 CHIP INDUCTORS Chip Inductors for Critical Applications ST376RAA • High SRF and excellent Q values ■ Tight tolerances, many values at 1% ■ 31 inductance values from 3.3 to 1200 nH SRF min4 DCR max5 Percent Imax Q min3 nH tolerance

CR32NP-120K

Abstract: CR32NP-100KC CR32NP-150KC CR32NP-101K CR32NP-101KC CR32NP-3R3M
Contextual Info: SMD Power Inductor CR32 Description • Ferrite drum core construction. • Magnetically unshielded. • L W H: 4.1 3.8 3.0 mm Max. • Product weight: 85mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

KT 8030

Abstract: SMBJ15A SMBJ130A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ28A SMBJ8.0A SMBJ120A
Contextual Info: Data Sheet 5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS Semiconductor 4E Mechanical Dimensions Description N 1^4.06/4.60^ Cathode _ • SMBJ5.0 Package “SMB 13.30/3.90 t*—mo /s/ sM .11/.30 1.65/2.191*-*1 1.91/2.41^ — ^ .O T /.20 1.90/2.15