RT5880 SMA Search Results

RT5880 SMA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CO-174SMAX200-003		Amphenol Cables on Demand	Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft	PDF
CO-316SMAX200-001		Amphenol Cables on Demand	Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft	PDF
CO-174SMAX200-002		Amphenol Cables on Demand	Amphenol CO-174SMAX200-002 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 2ft	PDF
CO-058SMAX200-001		Amphenol Cables on Demand	Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft	PDF
CO-174SMAX200-005		Amphenol Cables on Demand	Amphenol CO-174SMAX200-005 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 5ft	PDF

RT5880 SMA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Philips Capacitor Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency	Original	BFG10W/X OT343 Philips Capacitor transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin	Original	BFG10W/X OT343N MBK523 R77/01/pp11	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin	Original	BFG10W/X OT343N MBK523 R77/01/pp11 BC548 TRANSISTOR REPLACEMENT transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431	PDF
T2333 Abstract: K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 02.96 T2333-XV12-P1-7600 PMB 2333 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)	Original	T2333-XV12-P1-7600 GPS05864 P-TSSOP-16 T2333 K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer	PDF
"if amplifier" siemens Contextual Info: PMB 2333 SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s .2	OCR Scan	ITSB8434 "if amplifier" siemens	PDF
RT5880 Abstract: teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4 Contextual Info: S IE M E N S PMB 2333 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s. 2	OCR Scan	P-TSSOP-16 RT5880 teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4	PDF
Contextual Info: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and	Original	CGHV1F006S CGHV1F006S	PDF
Contextual Info: SIEMENS ICs for Communications Mixer/Amplifier P M B 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Ausgabe 09.97 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, BalanstraBe 73, 81541 München Herausgegeben von Siem ens AG,	OCR Scan	T2333-XV12-P3-7600 LL1608-FH P-TSSOP-16	PDF
vogt transformer Abstract: toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter Contextual Info: ICs for Communications LNA/MIXER PMB 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 GLWLRQ 3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUDH 0QFKHQ Siemens AG 1995. All Rights Reserved.	Original	T2332-XV12-P2-7600 vogt transformer toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter	PDF
imo 2.1 un 1950 safety data sheet Abstract: T2333 vogt transformer imo 2.1 un 1950 T2333-XV12-P3-7600 RT5880 RT5880 SMA amplifier mixer circuit diagram imo 2.2 un 1950 stocko mks Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved.	Original	T2333-XV12-P3-7600 SMD/0603 SMD/0805 B4672 LL1608-FH imo 2.1 un 1950 safety data sheet T2333 vogt transformer imo 2.1 un 1950 T2333-XV12-P3-7600 RT5880 RT5880 SMA amplifier mixer circuit diagram imo 2.2 un 1950 stocko mks	PDF
Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,	OCR Scan	T2332-XV12-P2-7600 053SbO fl235b05	PDF