RT5880 SMA Search Results
RT5880 SMA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CO-174SMAX200-002 |
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Amphenol CO-174SMAX200-002 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 2ft | |||
| CO-174SMAX200-001 |
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Amphenol CO-174SMAX200-001 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 1ft | |||
| CO-174SMAX200-003 |
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Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft | |||
| CO-316SMAX200-001 |
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Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft | |||
| CO-058SMAX200-001 |
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Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft |
RT5880 SMA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Philips Capacitor
Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
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bfg10w/xot343philips capacitortransistor bc548+8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin |
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bfg10w/xot343nmbk523r77/01/pp11 | |
BC548 TRANSISTOR REPLACEMENT
Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
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bfg10w/xot343nmbk523r77/01/pp11+10 | |
T2333
Abstract: K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer
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t2333-xv12-p1-7600gps05864p-tssop-16t2333+4 | |
"if amplifier" siemensContextual Info: PMB 2333 SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s .2 |
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itsb8434if amplifier" siemens | |
RT5880
Abstract: teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4
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p-tssop-16rt5880teflon s-parameteramplifier mixer circuit diagram+7 | |
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Contextual Info: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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cghv1f006s | |
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Contextual Info: SIEMENS ICs for Communications Mixer/Amplifier P M B 2333 Version 1.2 Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.97 Ausgabe 09.97 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, BalanstraBe 73, 81541 München Herausgegeben von Siem ens AG, |
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t2333-xv12-p3-7600ll1608-fhp-tssop-16 | |
vogt transformer
Abstract: toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter
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t2332-xv12-p2-7600vogt transformertoko baluntoko 10.7 transformer+6 | |
imo 2.1 un 1950 safety data sheet
Abstract: T2333 vogt transformer imo 2.1 un 1950 T2333-XV12-P3-7600 RT5880 RT5880 SMA amplifier mixer circuit diagram imo 2.2 un 1950 stocko mks
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t2333-xv12-p3-7600smd/0603smd/0805b4672+10 | |
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Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73, |
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t2332-xv12-p2-7600053sbofl235b05 |