RS DT 27 DIODE Search Results

D291S45T

Abstract: 1381
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 1381 S 45 T ø62,8 A C ±0,1 3,5 VWK July 1996 Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

D291S45T

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: PD-2.464 International S Rectifier HEXFRED" HFA70NC60C Ultrafast, Soft Recovery Diode V r = 600V F e a tu r e s R e d uce d RFI and EMI V F = 1.5V R e d uce d S n u b b in g Extensive C ha racte riza tion o f R ecovery P ara m e te rs Q rr * = 520nC d i r e c M /d t

D291S45T

Abstract: 1000A2 fast diode 1461 fast 1000V 1000A
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 . 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

D291S45T

Abstract: 1000A2
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 . 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: International B ulletin 127130 rev. C 09/97 IO R Rectifier IRK.26 SERIES THYRISTOR/DIODE and NEWADD-A-pak Power Modules THYRISTOR/THYRISTOR Features 27 A • Electrically isolated: DBC base plate ■ ■ 3500 VnMS isolating voltage Standard JED EC package

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

Contextual Info: WESTCODE Date:- 9th Sept 2011 Data Sheet Issue:- 2 Fast Recovery Diode Types M1583V#400 to M1583V#450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4000-4500 V VRSM Non-repetitive peak reverse voltage, (note 1)

M1583V

Abstract: M1583
Contextual Info: WESTCODE Date:- 9th Sept 2011 Data Sheet Issue:- 2 Fast Recovery Diode Types M1583V#400 to M1583V#450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4000-4500 V VRSM Non-repetitive peak reverse voltage, (note 1)

D291S45T

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

D291S45T

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

TLP741J

Abstract: E67349 VDE0884 pps power
Contextual Info: TLP741J TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Contextual Info: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility

tlp741j

Contextual Info: TLP741J TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP

W2624NC

Abstract: W2624NC160-250 W2624NC250 SW16-25CXC11C W2624NC160
Contextual Info: Date:- 7 May, 2003 Data Sheet Issue:- 1 Rectifier Diode Type W2624NC160 to W2624NC250 Old Type No.: SW16-25CXC11C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1600-2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

BYV44

Abstract: BYV74
Contextual Info: Philips Semiconductors Product specification Dual rectifier diodes ultrafast GENERAL DESCRIPTION BYV74 series QUICK REFERENCE DATA Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and

byv74

Abstract: BYV44
Contextual Info: Philips Semiconductors Product specification Dual rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are

Contextual Info: TLP741J TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

MOC3001

Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

D602 diode

Abstract: rectifier d606
Contextual Info: Bulletin 12062/A bitemational S Rectifier s d io 3n /r s e rie s FAST RECOVERY DIODES Stud Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 5 00V ■

HFA35HB120C

Contextual Info: PD-20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

HFA35HB60C

Contextual Info: PD-20378A PRELIMINARY TM HEXFRED HFA35HB60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

diode js

Abstract: DIODE JS.6 IXYS IXBOD
Contextual Info: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0