RS DT 27 DIODE Search Results

Contextual Info: PD-2.464 International S Rectifier HEXFRED" HFA70NC60C Ultrafast, Soft Recovery Diode V r = 600V F e a tu r e s R e d uce d RFI and EMI V F = 1.5V R e d uce d S n u b b in g Extensive C ha racte riza tion o f R ecovery P ara m e te rs Q rr * = 520nC d i r e c M /d t

D291S45T

Abstract: 1000A2 fast diode 1461 fast 1000V 1000A
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1461 S 35 . 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: International B ulletin 127130 rev. C 09/97 IO R Rectifier IRK.26 SERIES THYRISTOR/DIODE and NEWADD-A-pak Power Modules THYRISTOR/THYRISTOR Features 27 A • Electrically isolated: DBC base plate ■ ■ 3500 VnMS isolating voltage Standard JED EC package

Contextual Info: WESTCODE Date:- 9th Sept 2011 Data Sheet Issue:- 2 Fast Recovery Diode Types M1583V#400 to M1583V#450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4000-4500 V VRSM Non-repetitive peak reverse voltage, (note 1)

D291S45T

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Contextual Info: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility

Contextual Info: Date:- 7 May, 2003 Data Sheet Issue:- 1 Rectifier Diode Type W2624NC160 to W2624NC250 Old Type No.: SW16-25CXC11C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1600-2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

byv74

Abstract: BYV44
Contextual Info: Philips Semiconductors Product specification Dual rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are

MOC3001

Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

HFA35HB60C

Contextual Info: PD-20378A PRELIMINARY TM HEXFRED HFA35HB60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

diode js

Abstract: DIODE JS.6 IXYS IXBOD
Contextual Info: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0

BYV42

Abstract: BYV42E
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV42E series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast

Photo-Thyristor

Abstract: TLP541G tlp541 IF-10-16 photo thyristor photocoupler Thyristor TLP542 photo thyristor application TOSHIBA Thyristor 10C5
Contextual Info: TLP541G, TLP542G TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TLP541G,TLP542G Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA TLP541G consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP

Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 10 Oct, 2003   Extra Fast Recovery Diode Type F0900V#520 Development Type No.: FX055VC520 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1)

IGBT IRG4PC50UD

Abstract: IRG4PC50UD
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

65640

Contextual Info: GaAs IRED & PHOTO-THYRISTOR TLP741J Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

ABB Semiconductors

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters

Contextual Info: silìJllCllii If r m s V rs m V rrm SEMIPACK Fast Diode 1 Modules maximum values for continuous operation) 450 A IpAv (sin. 180; T case = 85 °C; 50 Hz 290 A 1000 SKKE 600 F 10 1200 SKKE 600 F 12 Symbol Conditions If d c If d c If d c Tease = 92 °C T amb = 45 °C; Rthha = 0,05 °C/W

ir modul

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP40R12KT3G IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

HFA32PA120C

Contextual Info: International > Ir|Rectifier HEXFRED Provisional Data Sheet PD-2.360 HFA32PA120C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units 1200 Vr V V rrm If ( A V ) 16 A trr (typ) 30 ns Q r r (typ) 260 nC I r r m (typ)

diode schottky 117c

Abstract: IRF7101 IRF7421D1
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode

TLP641G

Contextual Info: D e I ^ O T T S S D 00174^0 T | ~ TOSHIBA {DISCRETE/OPTO! 99D 9097250 TOSHIBA <DISCRETE/OPTO 17498 D T-V/-S7 TLP64 I G GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP641G consists of a photothyristor optically coupled to a gallium arsenide infrared emitting diode in a.six

VK 27 CT

Abstract: photo thyristor
Contextual Info: TLP141G GaAs IRED a PHOTO-THYRISTOR PROGRAMMABLE CONTROLLERS. AC-OUTPUT MODULE. SOLID STATE RELAY. The TOSHIBA MINI FLAT COUPLER TLP141G is a small outline coupler, suitable for surface mount assembly. TLP141G consists of a photo thyristor, optically coupled to a gallium arsenide infrared emitting diode.