RRH A2 Search Results

Contextual Info: f il H U U S E M I C O N D U C T O R A R R IS HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16K x 1 CMOS RAM December 1992 Pinouts Features • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD Sl • Transient Upset > 5 x 108 RAD(Siys - Latch-up Free > 1 x 101* RAD(Siys

V05 SMD CODE MARKING

Abstract: AG qd SMD smd marking code v05 md27c128 qml-38535 MD27C128-20 27C128 GDIP1-T28 27C128-25BXA 5962-8766105xx
Contextual Info: R E V IS IO N S LTR DATE YR-MO-DA D E S C R IP T IO N APPROVED A A dd e d A rrh e n iu s e q ua tion for u n b ia se d bake un d e r m argin test m ethod A, b a ck end m argin te st ste p C. C o rrected m ilitary part nu m be rs for de vice type s 01 and 02. T echn ica l ch a n g e s m ade to

Hitachi DSA00164

Contextual Info: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended

Hitachi DSA00164

Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers

HM51W17805

Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 Hitachi DSA00196
Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended

Hitachi DSA00164

Contextual Info: HM51W4405BS Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-686A Z Rev. 1.0 Nov. 29, 1996 Description The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4405BS Series has realized higher density, higher performance and various functions by

HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6 Hitachi DSA0044
Contextual Info: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers

HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6 Hitachi DSA0064
Contextual Info: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers

HM5116405

Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405S-5 HM5117405 Hitachi DSA0015
Contextual Info: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

RP102G

Abstract: RP100G RP101G RP104G RP106G RP108G RP110G 102B2
Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 EflMTlO? GGOGIST ^bl « » I X Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

CL-200 IR

Abstract: RP300G RP301G RP302G RP304G RP306G RP308G
Contextual Info: DIOTEC ELECTRONICS CORP SflE D M DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 u aL Tel.: 310 767-1052 Fax:(310)767-7958 m 204^107 OOODlb'i ADO • » I X Data Sheet No.: FSDP-301-A2 r r „ O 3 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

Hitachi DSA00164

Abstract: max 083
Contextual Info: HM5116405I Series 4,194,304-word x 4-bit Dynamic RAM ADE-203-757A Z Rev. 1.0 Mar. 17, 1997 Description The Hitachi HM5116405I Series is CMOS dynamic RAM organized 4,194,304-word × 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116405I Series

ct rac 70

Abstract: HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5
Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

Hitachi DSA00164

Abstract: HM51W16405
Contextual Info: HM51W16405 Series HM51W17405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-647D(Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W16405 Series, HM51W17405 Series are CMOS dynamic RAMs organized 4,194,304word × 4-bit. They employ the most advanced CMOS technology for high performance and low power.

HM51W16405

Abstract: HM51W16405LS-5 HM51W16405LS-6 HM51W16405LS-7 HM51W16405S-5 HM51W16405S-6 HM51W16405S-7 HM51W17405 HM51W17405S-5 Hitachi DSA00196
Contextual Info: HM51W16405 Series HM51W17405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-647D(Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W16405 Series, HM51W17405 Series are CMOS dynamic RAMs organized 4,194,304word × 4-bit. They employ the most advanced CMOS technology for high performance and low power.

Contextual Info: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages

Hitachi DSA00164

Contextual Info: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and

HM51W16165

Abstract: HM51W16165J-5 HM51W16165J-6 HM51W16165J-7 HM51W16165LJ-5 HM51W16165LJ-6 HM51W16165LJ-7 HM51W18165 HM51W18165J-5 Hitachi DSA00196
Contextual Info: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and

Hitachi DSA00164

Contextual Info: HM511667C Series 1M EDO DRAM 64-kword x 16-bit 256 refresh ADE-203-625A (Z) Rev. 1.0 Dec. 20, 1997 Description The Hitachi HM511667C Series is a CMOS dynamic RAM organized 65,536-word × 16-bit. HM511667C Series has realized higher density, higher performance and various functions by employing 0.8 µm CMOS

Hitachi DSA00164

Contextual Info: HM5117800 Series 16 M FP DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-632E (Z) Rev. 5.0 Nov. 1997 Description The Hitachi HM5117800 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800 offers Fast Page

Hitachi DSA00164

Contextual Info: HM51W17800 Series 16 M FP DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-664E (Z) Rev. 5.0 Nov. 1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast

DM05

Contextual Info: ADVANCE MICRON I 4 MEG TECHNOLOGY. INC. X MT3D49 9 DRAM MODULE DRAM 4 MEG M O D I IL F IV IW L /U L t. 4 m e g a b y te , 5v, FAST PAGE MODE X 9 FEATURES OPTIONS PIN ASSIGNMENT Front View 30-Pin SIMM (DD-2) — / ~ ö~ Vcc CAS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3

mt4lc4m4e8dj-6

Contextual Info: 4 MEG x 4 EDO DRAM V U C Z R O N D R A M L /n # 4 IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT (Top View OPTIONS 24/26-Pin SOJ (DA-2) V cc q 1 • DQ1 [ 2 DQ2 d 3 WE# : 4 RAS# : 5 NC/A11 c 6 A10 A0 A1 A2 A3 V cc c q : L q [ B

SIMM 30-pin

Abstract: simm-30 timing
Contextual Info: ADVANCE | V llC = R O N 4 MEG 4 MEG MT2D48 DRAM MODULE X8 DRAM FAST PAGE MODE FEATURES OPTIONS • Timing 60ns access 70ns access 80ns access PIN ASSIGNMENT Top View 30-Pin SIMM o Vcc CAS DQ1 AO A1 D02 A2 A3 Vss DOS A4 A5 DQ4 A6 A7 D05 AS A9 A10 OQ6 WE Vss