RP 1240 M Search Results

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

diode RP 4040

Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Contextual Info: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t

RC snubber circuit

Abstract: RP 8040 X ic 8040 1000C ic 4040 1200C
Contextual Info: new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés to ut diodes IHOMSON-CSF Type Average output current Courant m oyen da sortie Diodes Heatsinks Convecteurs 200 400 600 800 1000 1200 RP 2020 RP 4020 RP 6020

RP 8040 X

Abstract: ic 4040 KU1010 4040 ic 8040 IC 4040 All 1000C C20200 RC snubber circuit ku 1140
Contextual Info: new standard single phase all diodes metal stacks nouveaux ponts métalliques standards m onophasés tout diodes IHOMSON-CSF Type A verage output current Courant m oyen da sortie Tam b = 40°C A BDD BDD BDD BDD BDD BDD 20 20 20 20 20 20 200 400 600 800 1000

RC snubber circuit

Abstract: KU 1004 KU1504R ku 1008 m RP 8040 X 1200C SV2012R KU 1002 M KU 1006
Contextual Info: rectifier diodes > 100 A diodes de redressement^ 100 A Types •o Vrrm ■f s m 10 ms Vf A (V) (A ) <V) THOMSON-CSF / If Ir max (A ) (m A) (°C> 20 175 ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 R 1018 R 1020 R 1022 R 1024 R 1025 R 1002,

42r2

Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)

1000c

Abstract: ku 1008 m RP 1240 M RP 8040 X KU 1002 M KU1008 g4010 KU2412 triphase ku1010
Contextual Info: new standard three phase all diodes metal stacks iÿi nouveaux ponts standards métalliques triphasés tout diodes th o m so n -csf A v e rag e ou tp u t cu rre n t Courant moyen tie sortie Type Ta m b = *0°C A GDD GDD GDD GDD GDD GDD 20 20 20 20 20 20

Contextual Info: 215 RS series features • Direct replacement for T3 ¼ Bayonet Automobile Cap • Flat topped for enhanced, even illumination of large lens areas • Reverse polarity options available • Ideal for industrial pushbutton switches and annunciator panels • Centre contact Anode as standard

Contextual Info: 211 series features • Direct replacement for T3 ¼ Midget Edison Screw E10 • Centre contact Cathode version available panels • Durable to shock and vibration • Warm white LEDs may be used behind coloured lens as a true replacement for a filament lamp

diode RP 1040

Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

fr 608 diode

Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)

KU 1002 M

Abstract: All diodes SV2010 KU1008R ku 1008 m Diodes de redressement
Contextual Info: rectifier diodes > 100 A diodes de re d re ssem en t^ 100 A Types •o Vrrm ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir max ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 R 1018 R 1020 R 1022 R 1024 R 1025 R 1002, 1004, 1006, 1008,

ku 606

Abstract: SV2004
Contextual Info: rectifier diodes > 100 A diodes de re d re ssem en t^ 100 A Types •o Vr r m ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir m ax ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 1018 1020 1022 1024 1025 R R R R R R 1002, 1004, 1006, 1008,

Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7 ^ 4 1 4 2 QGlS2ba 07S KMM5364100/G DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: I rac tcAC I rc 60ns 15ns 110ns KMM5364100-7 70ns 20ns 130ns KMM5354100-8 80ns 20ns 150ns

Contextual Info: MICRON • M T12D 136 MEG X 36, 2 MEG x 18 DRAM MODULE SeWCOWXCTOR MC DRAM „ . . _ I V I W a . . Ä _ 1 MEG x 36>2 MEG x 18 FAST PAGE MODE (MT12D136 LOW POWER, PEXTENDED Y T P M n P n RF REFRESH (MT12D136 L) MODULE W b k FEATURES OPTIONS MARKING • Timing

Contextual Info: 215 series features • Direct replacement for T3 ¼ Bayonet Automobile Cap • Flat topped for enhanced, even illumination of large lens • Reverse polarity options available • Ideal for industrial pushbutton switches and annunciator panels • Centre contact Anode as standard

Contextual Info: METAL OXIDE VARISTOR SERIES"D" ZENAMIC ZENAMIC is the product name of a metal oxide varistor. ZENAMIC Transient / Surge Absorber, Series D is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing process,

1240a

Abstract: ic 1240A
Contextual Info: R C H I I - D S E M IC O N D U C T O R tm DM74ALS1240A Octal 3-STATE Bus Driver Features • A dvanced oxide-isolated, ion-im planted S chottky TT L process Connection Diagram Function Table 1 1A1 — 2 19 — 2G 2Y4 — 3 18 — 1Y1 ■ Low pow er dissipation version o f th e D M 74ALS240, 241

Contextual Info: JUL i F «:• SM5361000 L /5361000A(L)/5361000B(L) January 1993 Rev 2 SMART Modular Trchnoiotscs SM5361000(L)/5361000A(L)/5361000B(L) 4MByte (IM x 36) CMOS DRAM Modules General Description Features The SM 5361000 is a high performance, 4-megabyte dynam ic RAM module organized as 1M words by 36 bits,

MT4C1024DJ

Abstract: E1994
Contextual Info: |v iic : r M T12D136 1 MEG X 36, 2 MEG x 18 DRAM M O D ULE o n □RAM _ MODULE • ■ IV / W W ^ 1 MEG x 36>2 MEG x 18 FAST PAGE MODE MT12D136 lo w p o w e r, F EXTENDED Y T F M D F n R REFRESH F (MT12D136 L) I— FEATURES PIN ASSIGNMENT (Top View) OPTIONS

Contextual Info: bOE D • SIEMENS ÖE35bü5 004714b 472 « S I E G SIEMENS AKTIENGESELLSCHAF 1M x 36-Bit Dynamic RAM Module 2M x 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Information • • • • • • • • • • • • 1 048 576 words by 36-bit organization

Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

p466

Contextual Info: REVISIONS ZONE □ p e r a tin g S to ra g e REV T e m p e r a tu r e T e m p e r a tu r e DESCRIPTION DATE -4 0 t o R ange R ange -5 5 to + 85 d e g r e e s C +125 d e g r e e s C V c c V o lta g e , V d c +6 V tu n e +6 V o lta g e , V d c DC V o lt a g e