RON 350 Search Results

Contextual Info: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)

SSM3J108TU

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V)

Contextual Info: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)

SSM3J115TU

Contextual Info: SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications 2.1±0.1 Ron = 353 mΩ max (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V)

I2C and SPI/QSPI/MICROWIRE

Abstract: MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Contextual Info: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and

FSA1156

Abstract: FSA1156L6X FSA1156P6 FSA1156P6X FSA1157 FSA1157L6X FSA1157P6 FSA1157P6X
Contextual Info: FSA1156, FSA1157 Low-RON Low-Voltage SPST Analog Switch Features General Description • Maximum 0.9Ω RON for 4.5V Supply at 25°C The FSA1156 and FSA1157 are high-performance Single-Pole / Single-Throw SPST analog switches. The devices feature ultra-low RON of 0.75Ω (typical) and

Contextual Info: FSA1156, FSA1157 Low-RON Low-Voltage SPST Analog Switch Features General Description • Maximum 0.9Ω RON for 4.5V Supply at 25°C The FSA1156 and FSA1157 are high-performance Single-Pole / Single-Throw SPST analog switches. The devices feature ultra-low RON of 0.75Ω (typical) and

Contextual Info: R2A20101BM/NP Monolithic Synchronous Step-Down DC/DC Converter REJ03D0790-0300 Rev.3.00 May 14, 2008 Features • Built-in low Ron power MOS FETs Pch Ron = 0.30 Ω Typ , Nch Ron = 0.14 Ω (Typ) • High switching frequency: 2 MHz (Max) • Output current: 650 mA (Max)

Broad com 2156 processor

Abstract: FSA2156 FSA2156L6X FSA2156P6 FSA2156P6X J-STD-020B SC70-6
Contextual Info: FSA2156 Low-Voltage SPST 0.4Ω Analog Switch Features Description ƒ Maximum 0.7Ω ON resistance RON for +2.7V supply ƒ 0.25Ω max RON flatness for +2.7V supply ƒ Space-saving Pb-free MicroPakTM and SC70 The FSA2156 is a high-performance Single-Pole SingleThrow (SPST) analog switch that features ultra low RON

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

Contextual Info: 19-1461; Rev 0; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4562/MAX4563 serial-interfac e c ontrolled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and

SSM6J53FE

Contextual Info: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit : mm 1.6±0.05 : Ron = 204 mΩ max (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V)

SSM6J08FU

Contextual Info: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N05FU

Contextual Info: SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage

Contextual Info: FSA2269 / FSA2269TS — Low-Voltage Dual-SPDT 0.4Ω Analog Switch with Negative Swing Audio Capability Features Description ƒ 0.4Ω Typical On Resistance (RON) for +3.0V Supply ƒ 0.25Ω Maximum RON Flatness for +3.0V Supply ƒ -3db Bandwidth: > 50MHz

SSM5N05FU

Contextual Info: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage

Contextual Info: FSA2267 / FSA2267A 0.35 Low-Voltage Dual-SPDT Analog Switch Features ? ? ? ? ? ? ? Description Typical 0.35 On Resistance RON for +2.7V Supply FSA2267A Features <10µA ICCT Current when S Input is Lower than VCC RON Fatness for +2.7V Supply: 0.25 Maximum

SSM6J08FU

Contextual Info: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)

SSM3K05FU

Contextual Info: SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • Small package · Low on resistance : Ron = 0.8 Ω max @VGS = 4 V Unit: mm : Ron = 1.2 Ω max (@VGS = 2.5 V) · Low gate threshold voltage

SSM6N05FU

Contextual Info: SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) · Low gate threshold voltage

SSM3J108TU

Contextual Info: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 230mΩ max (@VGS = −2.5 V) 1.7±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V) Lead(Pb)-free 2.0±0.1

SSM6N05FU

Contextual Info: SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage