ROHM ORDERING INFORMATION Search Results

Contextual Info: IMT4FRA IMT4 Transistors AEC-Q101 Qualified General purpose dual transistors IMT4 IMT4FRA 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 3000 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 IMT4FRA 0.95 0.95 1.9

Contextual Info: IMX8FRA IMX8 Transistors AEC-Q101 Qualified General purpose dual transistors IMX8 IMX8FRA SMT6 X8 T108 (1) (2) 3000 0.8 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 2.8 0~0.1 Code Basic ordering unit (pieces) 1.6 0.15 Marking (3) IMX8 IMX8FRA (4) Part No. Package

ksda

Abstract: bu1851 U1851
Contextual Info: GPIO ICs Series Key Encoder IC No.09098EAT03 BU1851GUW ●Description Key Encoder IC can monitor up to 8x8 matrix 64 keys , which means to be adaptable to Qwerty keyboard. We adopt the architecture that the information of the only key which status is changed, like push or release, is encoded into the 8 bits

Contextual Info: GPIO ICs Series Key Encoder IC No.09098EAT03 BU1851GUW ●Description Key Encoder IC can monitor up to 8x8 matrix 64 keys , which means to be adaptable to Qwerty keyboard. We adopt the architecture that the information of the only key which status is changed, like push or release, is encoded into the 8 bits

Contextual Info: SSLSRÈTSK CMM2321 2 4 Preliminary Product Information April 1997 1 o f 4 2 5 GHz ^ 1 Watt Power Amplifier Features □ 48% Power Added Efficiency □ 31.5 dBm Output Power □ Low Distortion □ Low Cost SO-8 Surface Mount Package Functional Block Diagram

rohm surface mounted transistor series

Abstract: Z1 SOT343 GAS105
Contextual Info: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high

8543

Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583
Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low

RPI-1031

Abstract: SPICE MODEL OF I2C BUS FOR LED DRIVER BU16028KV laser diode spice model simulation BU2682MUV bu16028k triac spice model BU2682 RUM003N02* "cross reference" analog rgb to HDMI converter ic
Contextual Info: 2008.07 03 # New Products and Technology Visit our website for the latest product information New Products • LED Drivers for LCD Backlights ■ TV Encoders with Built-in AIE ■ High Brightness LED Numerical Displays Embedded ideas Search Clear, precise video signals for colorful, high resolution image generation

ML200C

Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
Contextual Info: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with

4350Z

Contextual Info: Advanced Information SPF-5043Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

rohm package code

Abstract: T106 T108 T110 T116 T146 T148 TE-17 diode T-77 TE61
Contextual Info: Part No. Explanation Taping Code Surface Mount Type When ordering, specify the part number. Check each code against the tables shown below. Fill in from the left, leaving any extra boxes empty on the right. Small signal / rectifier diode Example: 1 S S 3 5 5

MCR10

Abstract: MCR25
Contextual Info: Thick Film Chip Resistors MCR25 1210 size: 1 / 4W zFeatures 1) Made of same material as the general purpose chip resistors (MCR10 / 18). 2) Highly reliable chip resistor Ruthenium oxide resistive material offers superior resistance to the elements. 3) Electrodes not corroded by soldering

Contextual Info: Ultra low ohmic Metal plate / High power type Shunt Resistors Data Sheet PSR Series Features 1 High power class up to 4 to 5W. 2) The lineup of ultra-low resistance value : correspondence from 0.2m 3) Excellent temperature coefficiency. 4) Ideal for current detection under high current circuit.

Contextual Info: Fixed Thick Film Low Ohmic Chip Resistors For Current Detection UCR18 3216(1206 size : 1 / 2W) zFeatures 1) Chip resistors ideal for current detection. (11mΩ to 100mΩ) 2) Unique chip and terminal configuration reduces resistance shifting during the mounting process.

UCR10

Contextual Info: Fixed Thick Film Low Ohmic Chip Resistors For Current Detection UCR10 2012 size : 1 / 3W zFeatures 1) Superior rated power. 2) Stable, low resistance guaranteed regardless of the surrounding environment. 3) Thick film resistive elements were used to create this lineup of ultra-low resistance products ranging from 11mΩ to 100Ωm.

MCR10

Abstract: MCR50
Contextual Info: Thick Film Chip Resistors MCR50 2010 size : 1 / 2W zFeatures 1) Made of same material as the general purpose chip resistors (MCR10 / 18). 2) Highly reliable chip resistor Ruthenium oxide dielectric offers superior resistance to the elements. 3) Electrodes not corroded by soldering

MCR01MZSF1000

Contextual Info: Application Note 1865 Author: Don LaFontaine DAQ on a Stick, with Honeywell Pressure Sensor Introduction Ordering Information This application note shows the operation of Intersil’s precision products in a pressure sensor application. The application uses

Contextual Info: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Contextual Info: USER GUIDE | UG:301 PI31xx-xx-EVAL1 Cool-Power ZVS Isolated DC-DC Converter Evaluation Board Chris Swartz Principal Applications Engineer May 2013 Contents Page Introduction 1 Product Description 2 Board Connections 2 Thermal Considerations 3 Max I/O Ratings

SPF-5122Z

Abstract: SPF5122 spf 51z
Contextual Info: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

25c2625

Abstract: ECB-101161 267M3502104
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

hp laptop battery pinout

Abstract: dbx-05a piezo DMT-1206-I hp laptop ac adapter schematics diagram tms 980 c136 406549-4 dmt-1206 hp 530 motherboard power supply solution FW82801AA C7L3
Contextual Info: Intel Pentium® III Processor/840 Development Kit Manual May 2000 Order Number: 273333-002 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

SGA8343z

Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to