BD9886FV
Abstract: BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352
Contextual Info: 2008 SPRING Energy saving ! ECO Devices E x c e lle n c e in E le c tro n ic s ROHM ECO Devices Using ROHM ECO Devices saves energy and reduces CO2 generation. At ROHM we are committed to saving energy by reducing the power consumption of equipment. This starts at the component level - the basic building blocks of all circuits. ROHM, the leading
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LASER based Four ZONE security system
Abstract: LPG GAS SENSOR Intelligent Automatic Plant watering System motorcycle regulator agriculture based electronics projects kota super thermal power plant forest fire project JAPANESE TRANSISTOR DATA BOOK 2010 POWER SUPPLY BOARD KL 803 52/B Solar Charge Controller PWM lead acid battery
Contextual Info: 2007 CSR Report Contributing to the Global Environment and a Sustainable Society Table of Contents 2007 CSR Report Editorial Remarks Purpose of Publication This report has been published for the purpose of communicating with all stakeholders comprising the ROHM Group, and
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fy2000fy2004laser based four zone security systemlpg gas sensor+8intelligent automatic plant watering systemmotorcycle regulatoragriculture based electronics projectskota super thermal power plantforest fire projectjapanese transistor data book 2010power supply board kl 803 52/bsolar charge controller pwm lead acid battery
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NOx sensor
Abstract: rohm 574 kl diode sox sensor sensor nox sox co thousand years ethylbenzene BOD 1-04
Contextual Info: 2006 Site Report ROHM CO., LTD. Domestic Group 21,Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan Fiscal Year Item Electric-power consumption 2004 2005 101,396,000 kwh Fuel consumption 7,563 kl Water consumption 2006 100,219,000 kwh 101,947,000 kwh 6,519 kl
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nox sensorrohm 574kl diodesox sensor+4sensor nox sox cothousand yearsethylbenzenebod 1-04
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2SC2062
Abstract: 2SC2062B 2SC2062-C LEA100
Contextual Info: ROHM CO 4DE LTD » Di ODOSb'iö 2 13RHM js 7 > y X $ /Transistors 2SC2062 -T - 3 S - 2 ? V —m NPN y U 3 > ? - V > h > b y > y Z $ g i i l i & 7.^ High Gain Amp. & Switching
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BD2802
Abstract: ROHM RGB LEDs BD2802GU BD281 VCSP85H3 CONSTANT CURRENT CIRCUIT VCSP85H2 LED RGB 10mm BD2812GU
Contextual Info: New Product Bulletin RGB LED Driver ICs for Illumination BD2802GU/ BD2812GU Built-in Step-up Voltage Type Integrated illumination pattern reduces MCU load Product Outline ROHM’s new LED driver ICs developed for mobile phones, car audio, and other electronic devices integrate an
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bd2802gu/bd2812gubd2802gu7-bit/128-step+10leds/3048ma/128-stepe8038vcsp85h2vcsp85h3bd2802rohm rgb ledsbd281constant current circuitled rgb 10mm
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sports day
Abstract: car power window employee led therapy
Contextual Info: Creating a Safe and Healthy Environment ROHM believes that securing employee safety and health is at the core of any business activity. The Company has organized the Central Safety and Sanitation Committee, with subcommittees of experts with respect to chemicals and pharmaceuticals, gas, equipment, incidental
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sports daycar power windowemployeeled therapy |
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car wiring diagram stereo 10 pin
Abstract: BA3402 car wiring diagram Stereo tape head preamplifier switching electronic circuit diagram BA340
Contextual Info: roHm Auto Reverse Amplifier BA3402 Dimensions mm 2.8±0- Î9 .5 ± ° - The BA3402 is a m onolithic integrated cir cuit consisting of a preamplifier developed for use in car stereo auto-reverse tape decks. An internal electronic switch is used to perform forw ard/reverse head
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ba340220khzcar wiring diagram stereo 10 pincar wiring diagram+3stereo tape head preamplifierswitching electronic circuit diagramba340
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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FMG6
Abstract: J200M
Contextual Info: ROHM CO LTD h7 MOE D Bl TfiSÖ'm GQ0b324 T B R H H //Transistors . " "• " ~ S w S W 'O FMG6 y~-yj. 9 0 * > / * - * K ^ -T /ty In v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor •m • Wf2\fji£!§I/Dimensions U n it: mm
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D2144
Abstract: 2SD2132 D2144S 2SD2144S T-27-15 VEBO-12V TOA 2709
Contextual Info: ROHM CO LTD J> 40E I 7 Ô5 ö R R R DOQbDMQ h 7 > y X $ /'Transistors — y Z .2 7 -Û ? -rfó NPN y V □ > 7°l> T - 2 7 - !^ Epitaxial Planar NPN Silicon Transistors • • « ft 1 RHfl 2SD2132/2SD2144S — 2SD2132 2SD21443 7 • /D im e n s io n s Unit: mm)
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BA1350
Abstract: BA1351 BA4110 BAI350 BA1350F 11AF 1F 10pin ba1330 kyx 28 WT 7525
Contextual Info: ROHM CO LTD Jj"—7s < MQE » 70204=1=1 QQPMSn 4 MRHH I C / IC s for Audio Applications BA1350/BA1351 V 7 B Â 1 3 5 / S A 1 3 5 1 FM FM Stereo Multiplexer with Noise Controllers 7^7?~C>S~Ocf /BA1350F ^Maintenance Typey BA1350, BA1351 i , * fm ^f ^^ h ^ n . — T A > /7 ‘_
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ux11 V 20
Abstract: ux11 V
Contextual Info: ty IC/M onolithic ICs SSfëjEtflfPïl'ïtCOl'T/ Integrated Circuit Quality Assurance and Reliability r ta ftta ftli, tb, Q uality F irst—the u n d erlyin g co rp o ra te goal of ROHM t f 5 0 i'A '4 'S E â l'iS o aoÎ:llC D F*gÿf^*fêA ''3±filC iltiS ê
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Contextual Info: ROHM CO 4QE LTD D • 7 Û 2 Û 1 Ï 1'1 OOOS^M H R H fl 2SB851 /2SB1278 £ ' / T ransistors T-27-IS- ' 2SBS51 25131278 ô 7 ° U - ^ P N P y ' j 3 > h 7 > ' y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • ÿfïïi\ftiE O /'D im ensions Unit : mm
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2sb851/2sb1278t-27-is72sbs51+3750mw2sb12782sb851/2sb1278
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BU18400A
Abstract: BU18400 BU18400B BU18410 BU18420 BU18430 BU18440 BU18470 yf7a T-75-37-05
Contextual Info: ROHM CORP D7E D £ 7ftSflcm -f 9 □ 7 ° o -fe y "^/General Use Microprocessor BU18400 Series 8 M v h 3 o o a ib a s t, § BU18400 Series > 8-Bit Microprocessor ~ T - < - / q - / 7 . - o r7 ~ - ^ - 3 3 T 7 ^ 5 ^2 - 3 ?" 7 S' - 3 7 - 6 7 ' f - ' p BU18 4 CPU BU18400
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transistor A006
Abstract: 2SD1943 a006
Contextual Info: ROHM 40E CO L T D / T ransistors 2SP1943 D • TflSfl'm O O Q b O l S fl O R H M 2SD1943 "" 1 . . T -2 Z -H H S jftffc y L / — y % NPN > V =1 > h y > y Z $ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor 1 hFE v ^ v iv v in -
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2sd1943o-220q00l017t-33-11+3002-a006transistor a006a006
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MH1410
Abstract: QFP-44PIN QFP64-pin QFP64PIN
Contextual Info: ROHM 7 ' [J "j CORP D7E D | TflS flW □□□EEflfl 1 | n / W 7'«; ÿ K IC <7 flfj£gß nn ~ K IC/Hybrid ICs *7 ^a, s" - o • GaAs;fc—./ H f i/ G a A s Hall Element Absolute Maximum Ratings T a = 2 5 t:) ^ Electrical Characteristics (Ta= 25’C ) Type
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2SD1665
Abstract: 2FK transistor T2721 2SB1130AM 2SD1665AM 2FK 638 transistor
Contextual Info: 40E » ROHM CO LTD 7826^ □QQS'IBt. 3 H R H N / T ransistors 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon Transistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o
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2sd16652sb1130am2sd1665am-t-27-zl+5ti31it-27-212fk transistort27212fk 638 transistor
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2SD1809
Abstract: 005em 2SD1921 2SD1787 T103 ZF60
Contextual Info: 4QE » ROHM CO LTD m 7flEacici c] □oo5em 2SD1787/2SD1921* h 7 > s' X $ / T ransistors 2SD1787 2SD1921 b b ir h h T-27-Ô9 power AmPEpitaxial Planar NPN Silicon Transistors • ^ - J f ir H iH / D im e n s io n s U n it: mm 1) vCE (sat x < 7 *• 90mV at lc = 1 50 in A
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005em2sd1787/2sd1921t-27-2sd1787+7150ma150mv300ma2sd18092sd1921t103zf60
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Contextual Info: 40E ROHM CO L T D » 7 8 2 6 ^ □QQS'IBt. / T ransistors 3 HRHN 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon Transistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o
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1SS254
Abstract: 1SS252 ROHM 1SS254 1SS253 T-77
Contextual Info: ROHM $ *í CO LTD 40E 7fi2Äen cl O O O b M T l D K/Diodes 7 • RHM 1SS252/1SS253/1SS254 :-“ — 7 ^ 3 3 - 0 9 Silicon Epitaxial Planar High-Speed Switching Ultra-Mini Diodes • ^ ffi\f> iia /D im e n s io n s U n it: mm • 1&H v tB 'm v & 5 o
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1ss252/1ss253/1ss2547-03-c1ss2521ss253+31ss254rohm 1ss254t-77
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BU8321
Abstract: BU8322F KT 371 te1232 1F 10pin BA6565A kIS-8 ir 538 b32t CDI2B10
Contextual Info: ROHM CO OA LTD MOE D TflSfiW IC /IC s for OA Applications BU832I S e rie s DDQBTbl 3 E 3 RHil . BU832X Series h - > / \ ° ; u x u / \ ° - T - K o i - o ? T o n e P u lse R eperto ry D ialer • /D im e n s io n s Unit: mm <D iJ $ 4 T JU * i
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DTD113
Contextual Info: Transistors Digital transistors built-in resistors D T D 1 1 3 Z K / D T D 1 1 3 Z U •E x te rn a l dimensions (Units: mm) DTD113ZK 2.9±0.2 i 1+0.2 1,1- 0.1 1 .9 ± 0 .2 n 0 .8 ± 0 .t 10.95 0,95 c\P^ d o + 1 ca o +j CO eg (O t j( 3 ) ROHM : SMT3 EIAJ : SC-59
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2SC3271 N
Abstract: 2SC3271 2SC3271 P R3307 Transistor 126m
Contextual Info: ROHM CO 4DE LTD 7 ô S ô ci li cl J> Q00S7b3 1 E 3 RHM 2SC3271 h 7 > v ' 7 $ / I ransistors -7 ^ 3 3 - 0 7 ¡2 2 7 * 3 H M i £ f [ 7 0U - ^ N p N ' > u = l > S l i E i i 'f i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistor
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000s7b32sc3271to-126mc33-07+5ta-252sc3271 n2sc3271 pr3307transistor 126m
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DG04
Abstract: BA7258AS BA7258AK GTE2 V2420 BA7258
Contextual Info: ROHM CO LTD VTR - MOÉ D 7 0 2 0 im QQQ4S32 1 « R H M BA7258AS/BA7258AK IC /IC s for VTR Applications 7r77-2J B Â 7 2 5 8 Â S Luminance Signal Processors BA7258AK • W firfSiED /D im ensions Unit : mm BA7258AS, BA7258AK (i, r - f CCD M fc ? < > f t M J < X * + > -b 7 HHS* ¿5t 1*3» b
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