RN2307RN2309 Search Results

Contextual Info: RN2307RN2309 SILICON PNP EPITAXIAL TYPE Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0.1 AND DRIVER CIRCUIT APPLICATIONS. 1.25+ 0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: T O SH IB A RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in B ias Resistors • Sim plify Circuit Design • Reduce a Quantity of P arts M anufacturing Process

Contextual Info: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors