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    RLDRAM 3 Search Results

    RLDRAM 3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RLDRAM

    Abstract: content addressable memory low power ternary "Content Addressable Memory" ternary
    Contextual Info: RLDRAM 2 Memory: Addressing Networking Memory Requirements ISSI’s RLDRAM 2 Memory is a reduced-latency DRAM that offers fast random access 20ns tRC , making RLDRAM ideal for communication applications ranging from access nodes to core routers. table applications. Additionally, RLDRAM’s large density


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    288mb576mb400mhzrldram+3content addressable memory low powerternarycontent addressable memory" ternary PDF

    Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/


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    256mbmt49h8m32mt49h16m1609005aef81121545/source+209005aef810c0ffc256mbx16x32rldram PDF

    RLDRAM

    Contextual Info: RLDRAM II Controller MegaCore Function Errata Sheet March 2007, MegaCore Version 7.0 This document addresses known errata and documentation issues for the RLDRAM II Controller MegaCore function version 7.0. Errata are functional defects or errors, which may cause the RLDRAM II Controller


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    rldram PDF

    transistor SMD DKL

    Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c
    Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


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    288mbmt49h8m36mt49h16m18mt49h32m9+1209005aef80a41b46/source09005aef809f284btransistor smd dklba5 markingmarking smd x9micron ddr marking h12smd coda22 smd marking codea53 smd marking codemarking baxmarking code a02 smd transistormarking d1c PDF

    RLDRAM

    Abstract: diode V6
    Contextual Info: RLDRAM II Controller MegaCore Function Errata Sheet December 2006, MegaCore Version 6.1 This document addresses known errata and documentation issues for the RLDRAM II Controller MegaCore function version 6.1. Errata are functional defects or errors, which may cause the RLDRAM II Controller


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    rldramdiode v6 PDF

    MT49H16M18C

    Contextual Info: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


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    288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+1mt49h8m18c PDF

    15READ

    Abstract: marking ba5 MT49H8M18C MT49H16M18C
    Contextual Info: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


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    288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+3mt49h8m18c15readmarking ba5 PDF

    hspice MT49H16M36

    Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
    Contextual Info: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)


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    576mbmt49h16m36mt49h32m18mt49h64m9+509005aef81fe35b2/source09005aef81f83d49hspice mt49h16m36mt49h16m36fmmt49h32m18fm PDF

    09005aef809f284b

    Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9


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    288mbmt49h8m36mt49h16m18mt49h32m9+209005aef80a41b46/source09005aef809f284b PDF

    MT49H16M18

    Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


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    288mboutput0006mt49h8m36mt49h16m18 PDF

    Contextual Info: RLDRAM II Controller MegaCore Function Release Notes May 2007, MegaCore Version 7.1 These release notes for the RLDRAM II Controller MegaCore function version 7.1 contain the following information: • ■ ■ ■ ■ System Requirements System Requirements


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    BA6A

    Abstract: marking code d2c smd
    Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


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    256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram+2ba6amarking code d2c smd PDF

    Contextual Info: RLDRAM II Controller MegaCore Function Release Notes March 2007, MegaCore Version 7.0 These release notes for the RLDRAM II Controller MegaCore function version 7.0 contain the following information: • ■ ■ ■ ■ System Requirements System Requirements


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    RLDRAM

    Abstract: AMD64
    Contextual Info: RLDRAM II Controller MegaCore Function October 2005, MegaCore Version 1.0.0 Release Notes These release notes for the RLDRAM II Controller MegaCore function version 1.0.0 contain the following information: • ■ ■ ■ ■ System Requirements System Requirements


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    2000/xp32-bitamd64em64t+264-bitrldram PDF

    AMD64

    Abstract: RLDRAM
    Contextual Info: RLDRAM II Controller MegaCore Function Release Notes April 2006, MegaCore Version 1.1.0 These release notes for the RLDRAM II Controller MegaCore function version 1.1.0 contain the following information: • ■ ■ ■ ■ ■ System Requirements System Requirements


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    2000/xp32-bitamd64em64t+1rldram PDF

    MT49H16M18

    Contextual Info: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


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    288mboutput0006mt49h8m36mt49h16m18 PDF

    RLDRAM

    Abstract: MT49H16M18C
    Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


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    288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+22003micronrldram PDF

    MT49H16M18

    Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


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    288mbmt49h8m36mt49h16m18mt49h32m9+3144-ball09005aef80a41b46/zip09005aef809f284b PDF

    576mb

    Abstract: MT44K16M36PA-093E
    Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


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    576mbmt44k32m18mt44k16m3609005aef84003617+1mt44k16m36pa-093e PDF

    MT49H16M18C

    Contextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


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    288mbclo68-3900mt49h16m18c PDF

    MICRON BGA PART MARKING

    Abstract: RLDRAM 09005aef809f284b MT49H16M36
    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


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    576mbmt49h64m9mt49h32m18mt49h16m36+409005aef80a41b46/source09005aef809f284bmicron bga part markingrldram PDF

    MT49H16M36

    Abstract: MT49H32M18C
    Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


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    576mbmt49h32m18cmt49h64m9c09005aef815b2df8/source+209005aef811ba111mt49h16m36 PDF

    MT49H16M36

    Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


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    576mbmt49h64m9mt49h32m18mt49h16m36+209005aef80a41b46/source09005aef809f284b PDF

    MT49H16M18

    Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


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    288mbmt49h32m9mt49h16m18mt49h8m36+209005aef80a41b46/source09005aef809f284b PDF