RL DIODE 205 Search Results

Hitachi DSA00279

Contextual Info: HD151046 Advanced Transmission-line Drivers for Memory Modules ADE-205-175A Z 2nd. Edition February 1997 Description Different from conventional bus interface LSIs, the HD151046 treats the distance between a memory controller and a memory in memory module as a transmission line, and optimizes it including the wiring

rl 205 diode

Abstract: MSW2051-205 MSW2050-205 rl diode 205 MSW2050-205-T MSW2051-205-EVAL
Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

rl 205 diode

Abstract: MSW2051-205
Contextual Info: Surface Mount SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Wide frequency range: 50 MHz to 4 GHz, in 2 bands • Surface mount SP2T switch in compact outline: 8 mm L x 5 mm W x 2.5 mm H • Higher average power handling than plastic packaged MMIC switches: 158 W CW

Hitachi DSA00276

Contextual Info: HD74UH4066 Analog Switch ADE-205-022A Z 2nd Edition August 1993 Description The HD74UH4066 is high speed CMOS analog switch using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed. The device has low ON resistance for good transfer

ZENER diode TESTING CIRCUIT

Abstract: 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
Contextual Info: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient αVZ or TC herein for nominal voltages

TEMD5110X01

Abstract: J-STD-020D
Contextual Info: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • 20535_1 DESCRIPTION TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device SMD including the chip with a 7.5 mm2 sensitive area and a

C085

Contextual Info: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).

Contextual Info: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • 20535_1 DESCRIPTION TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device SMD including the chip with a 7.5 mm2 sensitive area and a

LC74HC373

Contextual Info: S AN Y O SEMICONDUCTOR ~15E D I 7^T?07b 0005747 CORP T ' ^ t o ' O 7-1/ 3021B C M O S High-Speed Standard Logic LC74HC Series Octal 3-State Noninverting D-Type Transparent Latch #2053A Features . The 1,07^0373 consists of 8 identical noninvertinrfV^atehes with 3-state

Hitachi DSA00279

Contextual Info: HD74CBT3253 Dual 1-of-4 FET Multiplexer / Demultiplexer ADE-205-616A Z Rev.1 May 2001 Description The HD74CBT3253 is a dual 1-of-4 high-speed TTL-compatible FET multiplexer / demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

HD74CBT3257

Abstract: HD74CBT3257TELL DSA003635
Contextual Info: HD74CBT3257 4-bit 1-of-2 FET Multiplexer / Demultiplexer ADE-205-624B Z Rev. 2 Nov. 2001 Description The HD74CBT3257 is a 4-bit 1-of-2 high-speed TTL-compatible FET multiplexer / demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

MCH6660-TL-H

Contextual Info: MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive

Hitachi DSA00279

Contextual Info: HD74CBT1G125 Single FET Bus Switch ADE-205-645 Z Rev. 0 Jan. 2002 Description The HD74CBT1G125 features a single high-speed line switch. The switch is disabled when the output enable (OE) input is high. Features • Minimal propagation delay through the switch.

Contextual Info: MCH6660 Ordering number : ENA1993 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6660 General-Purpose Switching Device Applications Features • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive

2N6849

Abstract: W41A
Contextual Info: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N6851

Contextual Info: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Silicon Photodiode Chip

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2054 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2054 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

Hitachi DSA00279

Contextual Info: HD74CBT3384A 10-bit FET Bus Switch ADE-205-652 Z Preliminary Rev. 0 Jan. 2002 Description The HD74CBT3384A provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

Hitachi DSA00279

Contextual Info: HD74CBT16210 20-bit FET Bus Switch ADE-205-646A Z Preliminary Rev. 1 Feb. 2002 Description The HD74CBT16210 provides 20-bits of high speed TTL-compatible bus switching. The low on state resistance of the switch allows connections to be made with minimal propagation delay. The device is

RFL1N10

Contextual Info: Hormis S RFL1N08L, RFL1N10L S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 80V and 100V RFL1N08L TO -205AF RFL1N08L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use

Contextual Info: I l4flflb51D 0 0 0 0 2 ^ 0 û • ISO MSE D IS OC OM C O M P O N E N T S LTD IS 205X, IS 206X~ '•»t.ïSïS <¿5 ism oM OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN MM DESCRIPTION The IS205X, IS206X are optically coupled isolators

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

l20ai

Contextual Info: SANYO SEM ICO ND UC TOR CORP 15E D I . 7 eH7D7fc, 0005730 0 J ~ T - 4 ^ - 2 .1 LC74HC366 30068 C M O S High-Speed Standard Logic L C 7 4 H C Series Hex 3-State Inverting Bus Buffer *2050A Features The LC74HC366 consists of 6 identical inverting buffers with 3-state outputs.

74ls368

Contextual Info: SANYO SEMICONDUCTOR CORP LG74HC368 íífe 'v IB E » I 7^707^ O G O S 7 4 l4 b |~~ h ; 300 6B CMOS High-Speed Standard Logic LC74HC Series Hex 3-State Inverting Bus Buffer *2052A Features • The LC74HC368 consists of 6 identical inverting buffers with 3-state outputs.