RL 724 N Search Results

RL-724

Abstract: rl 724 preamplifier Rel-labs of700
Contextual Info: REL-LABS INC T7 7btE70S 2 D “T-*-H - / y 3 0 Midland Avenue Hicksvitle, N.Y. 11801 516 935-7272 REL-LABS IIMC. ^ Â fy lr itl yyjicroataclronic ŸŸIanufacturiny Charge Sensitive Preamplifier Specifications for Model RL-724 RL-724 Charge Sensitive Preamplifier, designed to be used with

jfet folded cascode

Abstract: rl 724 preamplifier RL-724 4j16
Contextual Info: RL—724 CHARGE SENSITIVE PREAM PLIFIER 1. G eneral Features o f the R L -724 Pream plifier • Small Size 8 pin socket on 0.1” center to center allows preamplifier to be placed close to the detector. • Fast Rise Time. • Long Decay Time. • Excellent Linearity.

MMUN2211

Abstract: a8j datasheet a8j digital transistor data sheet MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232
Contextual Info: MMUN2211 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor

a8j digital transistor

Abstract: marking A8J A8K resistor MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 transistor A8J
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

a8j digital transistor

Abstract: transistor A8J marking A8F MMUN2211-MMUN2241 A8K MARKING CODE marking A8J code A8J marking A8K A8A Transistor A8K resistor
Contextual Info: MMUN2211-MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

MMUN2211

Abstract: MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

MMUN2211

Abstract: MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 transistor A8A
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

SOT-23 A8A

Abstract: MARKING A8C SOT-23 sot 23 A8A pd 19 TRANSISTOR SOT-23 A8C SOT23 SOT-23 A8B MMUN2211LT1 R1 SOT23 SOT-23 transistor code P MMUN2233LT1
Contextual Info: MMUN2211LT1 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

transistor A6A

Abstract: A6k SURFACE MOUNT transistor a6f MMUN2115 a6j* pnp transistor a6j datasheet transistor A6j MMUN2112 MMUN2113 MMUN2114
Contextual Info: MMUN2111…MMUN2134 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

M57120L

Abstract: capacitor 47uF 25 volts ha13168 capacitor 2.2uF 400V terminal 380v 100 a 380v 400V voltage regulator M57120L-01
Contextual Info: M57120L Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 High Voltage Input DC-to-DC Converter MARKED SIDE A B D E H J F K L G M 1 C 12 TERMINAL NUMBER 11 5 Features: □ Wide Range of Input Source Voltage (113V-400V DC)

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

5213

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

521T

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

MCR100-8

Abstract: mcr100 MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM

MCR100-8

Abstract: MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM

MCR100-7

Abstract: MCR100-8 MCR100-3 MCR100-4 MCR100-5 MCR100-6 mcr100
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.19g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM

rl 724 n

Abstract: 1SV202 1SV202BWT OF VR 10K
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

SEMTECH MARKING

Abstract: 1SV202BWT rl 724 n
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

plenum

Abstract: 2133144 S-90-661
Contextual Info: Category 3 Cables Datacom Category 3 Non-Plenum Product Construction Conductors: • 24 AWG solid bare annealed copper Insulation: • Flame-retardant semi-rigid PVC Color Code: • See Color Code Chart on page 86 Rip Cord: • Applied longitudinally under jacket

smd wd diode

Abstract: smd marking CODE wD diode BAS316 smd diode wd smd marking wd SOD323 BAS316 marking code js sod323 smd diode sod-323 marking code 500
Contextual Info: BAS316 High-speed diode PINNING Features PIN • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage : max. 100V • Repetitive peak reverse voltage : max. 100V • Repetitive peak forward current : max. 500mA

smd wd diode

Abstract: smd marking CODE wD diode BAS316 marking code js sod323 diode SOD323 BAS316 smd code marking js
Contextual Info: BAS316 High-speed diode PINNING Features PIN • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage : max. 100V • Repetitive peak reverse voltage : max. 100V • Repetitive peak forward current : max. 500mA

Contextual Info: MMBT-CR100-6 G K A MAXIMUM RATINGS TJ=25°C unless otherwise noted Rating Symbol Value Unit 400 Volts IT(RMS) 0.6 Amps ITSM 6 Amps It 2 0.415 As PGM 0.1 Watts PGF(AV) 0.01 Watt IGFM 1 Amp VGRM 5 Volts Operating Junction Temperature Range @ Rated VRRM and VDRM

Contextual Info: MMDT102S NPN Silicon Epitaxial Planar Transistor For switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package