RL 724 N Search Results

RL-724

Abstract: rl 724 preamplifier Rel-labs of700
Contextual Info: REL-LABS INC T7 7btE70S 2 D “T-*-H - / y 3 0 Midland Avenue Hicksvitle, N.Y. 11801 516 935-7272 REL-LABS IIMC. ^ Â fy lr itl yyjicroataclronic ŸŸIanufacturiny Charge Sensitive Preamplifier Specifications for Model RL-724 RL-724 Charge Sensitive Preamplifier, designed to be used with

jfet folded cascode

Abstract: rl 724 preamplifier RL-724 4j16
Contextual Info: RL—724 CHARGE SENSITIVE PREAM PLIFIER 1. G eneral Features o f the R L -724 Pream plifier • Small Size 8 pin socket on 0.1” center to center allows preamplifier to be placed close to the detector. • Fast Rise Time. • Long Decay Time. • Excellent Linearity.

MMUN2211

Abstract: a8j datasheet a8j digital transistor data sheet MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232
Contextual Info: MMUN2211 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor

a8j digital transistor

Abstract: marking A8J A8K resistor MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 transistor A8J
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

a8j digital transistor

Abstract: transistor A8J marking A8F MMUN2211-MMUN2241 A8K MARKING CODE marking A8J code A8J marking A8K A8A Transistor A8K resistor
Contextual Info: MMUN2211-MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

MMUN2211

Abstract: MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

MMUN2211

Abstract: MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 transistor A8A
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias

M57120L

Abstract: capacitor 47uF 25 volts ha13168 capacitor 2.2uF 400V terminal 380v 100 a 380v 400V voltage regulator M57120L-01
Contextual Info: M57120L Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 High Voltage Input DC-to-DC Converter MARKED SIDE A B D E H J F K L G M 1 C 12 TERMINAL NUMBER 11 5 Features: □ Wide Range of Input Source Voltage (113V-400V DC)

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

5213

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

521T

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

MMUN2232

Abstract: MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2233
Contextual Info: MMUN2211…MMUN2241 NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Resistor Values Type R1 K R2 (K) MMUN2211 10 10 MMUN2212 22 22 MMUN2213 47 47 MMUN2214 10 47 MMUN2215 10 ∞ MMUN2216 4.7 ∞ MMUN2230

rl 724 n

Abstract: 1SV202 1SV202BWT OF VR 10K
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

SEMTECH MARKING

Abstract: 1SV202BWT rl 724 n
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

Contextual Info: MMDT102S NPN Silicon Epitaxial Planar Transistor For switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package

MMBT-CR100-6

Contextual Info: MMBT-CR100-6 G K A MAXIMUM RATINGS TJ=25°C unless otherwise noted Rating Symbol Value Unit 400 Volts IT(RMS) 0.6 Amps ITSM 6 Amps It 2 0.415 As PGM 0.1 Watts PGF(AV) 0.01 Watt IGFM 1 Amp VGRM 5 Volts Operating Junction Temperature Range @ Rated VRRM and VDRM

Contextual Info: MMDT221K NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector Output Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50

Contextual Info: MMDT221K NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector Output Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50

Contextual Info: MMDT221F NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector Output Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50

1SV202

Abstract: 1SV202BWT
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

Contextual Info: MMDT221F NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector Output Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50

Contextual Info: MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VDSS 60 V 60 V ± 20 ± 40 115 800 V Drain Source Voltage Drain Gate Voltage (RGS ≤ 1 MΩ)

1SV202BWT

Abstract: 1SV202
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

mmbt7002

Abstract: mmbt7002 sot-23
Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS ON • Voltage controlled small signal switching • High saturation current capability • High speed switching Drain Gate 1.Gate 2.Source 3.Drain