RL 255 DIODE Search Results
RL 255 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
RL 255 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NJL6402R-2Contextual Info: NJL6402R-2 COBP Photo Diode for Front monitor GENERAL DESCRIPTION The NJL6402R-2 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time. |
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njl6402r-2405nm/650nm/780nm200mhz780nm+4 | |
NJL6401R-3Contextual Info: NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time. |
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njl6401r-3405nm/650nm/780nm250mhz780nm+4 | |
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Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT B Lead ( Pb ) Free Product – RoHS Compliant PD006-SMT(B) SMT Type PIN-Photodiode PD006-SMT(B) is a surface mount type PIN-photodiode featuring excellent responsibility of 6ns and high photocurrent. This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted |
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pd006-smt44mmx0 | |
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Contextual Info: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage |
OCR Scan |
diode/do-41do-201do-41q007l | |
diode LR 105
Abstract: DIODE ZZ160 "bidirectional zener" do-35 ZZ110
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OCR Scan |
do-35bav19bav20bav21+10 | |
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Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 600W S E R IE S TVS DIODES / DO-15 CASE 8 600W£ ?•] n n m JL "€i Breakdown Voltage v br TYP E P6KE6.8 P6KE6.8A P6KE7.5 P6KE7.5A P6KE8.2 P6KE8.2A P6KE9.1 P6KE9.1 A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A |
OCR Scan |
do-15p6ke10p6ke10ap6ke11+6 | |
y6 smd zener
Abstract: smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9
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OCR Scan |
ot-223od-87ot-23y6 smd zener+9 | |
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Contextual Info: TRANSIENT VOLTAGE SUPRESSORS 400W SURFACE MOUNT TVS DIODES / DO-214AC CASE 2 400W £ ÿi] _ iw>f t i r _ ÆA-fe-lfS Breakdown Voltage @ It V br TYPE TFMAJ5.0 TFMAJ5.0A TFMAJ6.0 TFMAJ6.0A TFMAJ6.5 TFMAJ6.5A TFMAJ7.0 TFMAJ7.0A |
OCR Scan |
do-214actfmaj10tfmaj10atfmaj11+6 | |
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Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A |
OCR Scan |
5ke105ke10a5ke115ke11a+6 | |
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Contextual Info: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data C |
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rl201rl208do-15mil-std-202 | |
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Contextual Info: Generic Optoisolator Specifications_ MCA230, MCA231, MCA255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington-Connected Phototransistor T h e MCA series co n sists o f a g alliu m a rsen id e, infrared em ittin g d io d e co u p le d w ith a silic o n p h o to -D a rlin g to n |
OCR Scan |
mca230mca231mca255 | |
IN914
Abstract: in916 in914 diode in914b diode in914 1N914B carton box
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in914in916250mwin914/9ecutive+6 | |
1SS355Contextual Info: Diodes SMD Type High- Speed Switching Diode 1SS355 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1 |
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1ss355od-323100ma | |
diode sy 164 dl
Abstract: diode sy 164 02N2222 b6045
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OCR Scan |
mbr6035mbr6045diode sy 164 dldiode sy 164+2 | |
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1SS353
Abstract: 1SS353 MARKING
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1ss353od-323100ma1ss353 marking | |
smd dual diode code A7
Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
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bav756sbaw56ot363sc-88+11 | |
1.5FMCJ220Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1 |
OCR Scan |
do-214ab5fmcj105fmcj10a5fmcj11+7 | |
DC93163Contextual Info: ISOCOM COMPONENTS ICPL0452 / ICPL0453 / ICPL0500 / ICPL0501 1. NC DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode |
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icpl0452icpl0453icpl0500icpl0501+2 | |
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Contextual Info: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed |
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icpl2530icpl25315000vrms | |
PS7841-A15
Abstract: PS7841-A15-F3
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ps7841-a15ps7841-a15-f324-hour | |
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Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 0# % i t l ' i i &n *^5^ 1500W SURFACE MOUNT TVS DIODES / /]V;Tsr"ta5 Breakdown Voltage V br TYPE TFMCJ5.0 TFMCJ5.0A TFMCJ6.0 TFMCJ6.0A TFMCJ6.5 TFMCJ6.5A TFMCJ7.0 TFMCJ7.0A TFMCJ7.5 TFMCJ7.5A TFMCJ8.0 TFMCJ8.0A TFMCJ8.5 TFMCJ8.5A |
OCR Scan |
tfmcj10tfmcj10atfmcj11tfmcj11a+6 | |
Si4816DYContextual Info: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4816dy0-to-10v28-jun-01 | |
DC93164
Abstract: icpl2631
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icpl2630icpl263110mbit/s10kv/+3 | |
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Contextual Info: BAS16M3T5G Preferred Device Silicon Switching Diode Features • This is a Pb−Free Device MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA |
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bas16m3t5g | |