RL 254 DIODE Search Results

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H11AV1

Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H23 8 OHM J

Contextual Info: HIGH LEVEL DETECTORS, DIRECTIONAL SERIES CH GENERAL INFORMATION: The Series CH Directional Detectors are directional couplers w ith integral detectors. They are used fo r m onitoring power using high level diodes and high directivity couplers w ith o u t disturbing

H11NXM

Abstract: H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.

216 OPTO SO8

Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
Contextual Info: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density

H11D1M

Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

h11n1 "cross-reference"

Abstract: H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.

fairchild 1011 opto

Abstract: cj 6PIN H11L1SR2M H11L1M
Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and

B 57 995

Abstract: DL306-XXXTG 347t VL308-436TG
Contextual Info: ADVANCED INTERCONNECTIONS Closed Frame LED Sockets 5 Energy W ay, P.O. Box 1019, W est W a rw ick, Rl 02893 • Tel. 4 0 1 -8 2 3 -5 2 0 0 • FAX 4 0 1 -8 23-872 3 o c Closed Frame LED Light Emitting Diode Sockets Co) °< m D> .300 (7.62) o o o o o o ft

BA3406AF

Abstract: c47p
Contextual Info: Audio ICs Dual preamplifier with mute function BA3406AF The BA3406AF is a multi-function dual-channel pream plifier with a built-in mute circuit and a tim e-constant switching circu it fo r use w ith metal tape. The ou tput circu its have diodes, and can be connected to other circu its in parallel,

OPA77GP

Abstract: OPA77 OPA177EZ OPA77FP OP177EZ OP-07 THERMOCOUPLE AMPLIFIER OPA77G OP-07 OP-177 OPA177
Contextual Info: OPA177 OPA77 Precision OPERATIONAL AMPLIFIER FEATURES ● ● ● ● ● APPLICATIONS LOW OFFSET VOLTAGE: 10µV max LOW DRIFT: 0.1µV/°C HIGH OPEN-LOOP GAIN: 130dB min LOW QUIESCENT CURRENT: 1.5mA typ REPLACES INDUSTRY-STANDARD OP AMPS: OP-07, OP-77, OP-177, AD707,

H11L1M

Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and

Opto Coupler 4N36

Abstract: MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference" MOC205-M
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • LOW OFFSET VOLTAGE: 10|iV max • LOW DRIFT: 0.1|lV/°C • • • • • HIGH OPEN-LOOP GAIN: 130dB min • LOW QUIESCENT CURRENT: 1.5mA typ • REPLACES INDUSTRY-STANDARD OP

c1247

Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

Contextual Info: BAV105 J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope, Q UICK REFERENCE D A T A VR max. 60 V Repetitive peak reverse voltage V RRM max. 60 V Repetitive peak forward current iFRIVI max. 600 mA

Contextual Info: 1SV282 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm High Capacitance Ratio : C2 y /C 2 5 Y = 12.5 TYP. Low Series Resistance : rs = 0.6O (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

13002 power transistor

Abstract: PS2513-1 PS2513L-1 PS2513L-1-E3 PS2513L-1-E4 PS2513L-1-F3 PS2513L-1-F4 c s 13002 TRANSISTOR
Contextual Info: HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES PS2513-1 PS2513L-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. isolators containing a GaAs light emitting diode and an NPN The PS2513-1 and PS2513L-1 are optically coupled

1N4140

Abstract: 1N4305 diode in 4148 diode 1N4151
Contextual Info: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I

Contextual Info: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage

OPA77GP

Abstract: OPA177EZ 20w5 OPA77 a77e OPA177 DIE 300CC OP177EZ
Contextual Info: OPA177 OPA77 O AVAILABLE IN DIE FEATURES APPLICATIONS • • • • • LOW OFFSET VOLTAGE: 10|iV max LOW DRIFT: 0.1|iV/°C HIGH OPEN-LOOP GAIN: 130dB min LOW QUIESCENT CURRENT: 1.5mA typ REPLACES INDUSTRY-STANDARD OP AMPS: OP-07, OP-77, OP-177, AD707, ETC.

A-405

Abstract: RL251 RL257
Contextual Info: LESHAN RADIO COMPANY, LTD. RL251 thru RL257 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 50 to 1000V Forward Current 2.5A Flammability Classification 94V-0 * High temperature metallurgically bonded construction

Contextual Info: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also