RKM V Search Results

rkm transistor

Abstract: RKM 9 rkm v turck 1-800-544-7769 MN55441 RKM 56D TURC 1.gn
Contextual Info: TURCK Industrial Connectivity Products 2-5 Wire minifast Cordsets, Smooth Body • Straight Female Connectors • NEMA 1, 3, 4, 6P and IEC IP 67 Protection • 600 V, 9 A Housing Style Part Number RKM 26D-*M RKM 35D-*M RKM .D RKM 36D-*M RKM 46D-*M RKM 56D-*M

hc4316

Abstract: M74HC4316
Contextual Info: SGS-THOMSON RKM iŒ OTOKS M54 HC4316 M74 HC4316 QUAD BILATERAL SWITCH • HIGHSPEED tp D = 13 ns TYP. AT Vcc = 5V . LOW "ON” RESISTANCE: 120 i ! TYP. (Vcc - Vee = 2 V) 50 Q TYP. (Vcc - Vee = 4.5 V) 35 £2 TYP. (Vcc - Vee = 9 V) ■ WIDE ANALOG INPUT VOLTAGE RANGE: +6V

H-17

Abstract: TM200DZ-24 TM200DZ-2H TM25CZ-H TM25CZH
Contextual Info: -286 - iM - i TM 2 0 0 D Z -2 4 , -2H o im B i ± % f ~ Jr - Z f ö H LSÜ 2500V; lil-l. V V'h s .w #6.5±0.2 1700 •H Uf. IÌLÌ ^7 V I rkm .IN ">ii T, = 125'C. £ it À i'f' Vi > - V hhm íí'> . t ik mA 1600 V I drm r ,= 1 2 5 * C . Vn=Vi>KM 30 1600 V

Contextual Info: Precision Adapters TYWOAL M RKM U NCft rwirr n u m iim yuaroM O «nd im m t o m o 7 m m t o 3 .5 m m 35m m to 7m m preolalon ooaxiaJ adaptera a rt deal good tor uae with predaton taat Irtatmmentation and teat oomponanta. Aa an addad deetgn feature, the 35m m oonneotor la

NI15-G30-AP6X-B11

Abstract: NI15-G30-AP6X-B1141 RKM 15 RKM 40 T4256200 BI10-G30-AZ3X
Contextual Info: Housing Style 30 mm - Embeddable, minifast Right Angle Connection Part Number Bi10-G30-AZ3X-B1431 ID Number Features T4372600 Sen s Ran ing ge m m Inductive Sensors Output 10 2-Wire AC/DC 30 mm - Embeddable, minifast Connection, Teflon Coated 30 mm - Nonembeddable,

rkm 21

Abstract: CK40 CK-40 BI15U-CK40-ADZ30X2-B1131 PBT20 M1335091 RKM 15
Contextual Info: Housing Style - Rectangular CK40 - Embeddable/Nonembeddable, minifast Connector ID Number Features Em bed dab le Sen sin Ran g ge m m Inductive Sensors Uprox • Ni35U-CK40-ADZ30X2-B1131 W/BS 4 M4280090 M4280290 M4280410 15 25 35 Bi15-CK40-ADZ30X2-B1131/S34 W/BS 2.1

RKM 40

Contextual Info: Housing Style 30 mm - Nonembeddable, minifast Connection, Teflon Coated Part Number Ni20U-GT30-ADZ30X2-B1131 ID Number M4281822 Features Sen s Ran ing ge m m Inductive Sensors Output 20 2-Wire AC/DC Short-Circuit Protected 30 mm - Nonembeddable, Right Angle minifast Connection

HUB1200-S

Abstract: HUB1800-S
Contextual Info: !"#$% Nât !" 123333333333333333333333333333333 !"#$% !"#$%&' *+,-./01 NIMMMt !"#$%&'()*+,!"#$%&'()*+,-./012324 !"#$%&'()*%+,-%&./012 !"#$%&'()*+,-./01-234 !"#$%&'()"*+,-+./"01' !"#$%& '()*+,-+./0123 !"#$%&'()*+,-./0!$%1E !"#$%&'()*+,-./01"234 F !"#$%&'()*+"#!,-./0*1

TTC 103

Abstract: A454 H125 TP802C06 A455
Contextual Info: TP802C06HOA SCHOTTKY BARRIER DIODE Features • <&vF Low V f C onnection Diagram Super high speed sw itchin g. High reliability by planer design. : Appl ¡cations High speed pow er sw itchin g. M a xim u m Ratings and Characteristics : Absolute M axim um Ratings

C62M

Abstract: BHM 06 4050AE
Contextual Info: ERC62M-004HOA SCHOTTKY BARRIER DIODE • 4 # il : Features • tUtt t t ® tf& B Z tit-7 ) V ■? Insulated package by fu lly m o ld in g . • <£Vf Low V F Connection Diagram • t a -v + ' s v Super high speed sw itch in g . • 7V — ftffil-.fcSSiBiiHife

911S2

Abstract: g911s
Contextual Info: Y G 9 1 1 S 2 e a LOW LOSS SUPER HIGH SPEED RECTIFIER ; F e a tu re s Insulated package by fully m o ld in g . • V„ Low V K m m m m C onnection D iagram S u p e r h igh speed s w itc h in g , High reliability by planer d e sig n . *. A p p lica tio n s

ESAC92M-02

Abstract: ifw 04
Contextual Info: ESAC92M -02 ioa n ± 'i'W 3y 4 * - v LOW LOSS SUPER HIGH SPEED RECTIFIER • & £ : Features • W W it i f )v k 5 < - ? fit - 7 in s u la t e d p a c k a g e b y f u lly m o l d i n g . • te V , Low V] wc C onnection Diagram S u p e r h ig h speed s w itc h in g .

PBT-GF30-VO

Abstract: NI40U-CP40-AN6X2 B1141 Bi15U-CP40-AP6X2 VAT200 RKM 40-2M
Contextual Info: TURCK Inductive Sensors Uprox _ CP40 Limit Switch Style Sensors, Plastic Housing combiprox  Uprox  UPROX 3-Wire DC 10-30 VDC, Short-Circuit and Overload Protected Normally Open, NPN Sinking or PNP (Sourcing) Part Number Em be d R a dabl e ted O Di

MARKING rkm

Abstract: tx 01 05a rkm v
Contextual Info: E R A 9 1 - Q 2 . 0 5A _ • : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER mnm: Features Ultra small package. Possible for 5mm pitch automatic insertion. : Marking Ä 7 - 3 “ K: É Color code : White 4 o< Voltage class ” 3 1} V — V f —9

Contextual Info: ESAB34M C (5A) F A S T R EC O V E R Y DIO DE Features Insulated package by fully m o ld in g . Soft recovery, low noise. Connection Diagram High reliability : Applications High speed pow er sw itching, M a xim u m Ratings and Characteristics : Absolute M axim um Ratings

rkm sot-23

Contextual Info: LMV721 LMV722 www.ti.com SLOS470C – JUNE 2005 – REVISED SEPTEMBER 2010 10-MHz LOW-NOISE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS Check for Samples: LMV721, LMV722 FEATURES 1 • • • • LMV7210DBV or DCK PACKAGE TOP VIEW Power-Supply Voltage Range: 2.2 V to 5.5 V

Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.

A525

Contextual Info: ESAD83M -006 3oa SCHOTTKY BARRIER DIODE Features I n s u la t e d p a c k a g e b y f u lly m o l d i n g . • i&Vp Low V F C onnection Diagram S u p e r h ig h speed s w itc h in g . • -* u - i —&mz ¿ s s is f i t t H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: MMBT1031 115 mA, 60V, RDS on =7.5ȍ Elektronische Bauelemente Small Signal MOSFET RoHS Compliant Product SOT-23 N–Channel A FEATURES L 3 . Low on-resistance B S Top View . Fast switching speed 1 . Low-voltage drive V G Drain . Easily designed drive circuits

FCHS10A045

Abstract: 10a45
Contextual Info: ¿ y — F - '- r y 1 0 A 4 5 V T j* 1 5 0 V S B D Fully Molded similar to TO-22QAB Cathode common FCHS10A045 ttttft Nihon Inter Electronics Corporation Specification ' > 3 -y h y T 5? 4 Construction Schottky B arrier Diode Application H igh Frequency Rectification

DP-312

Abstract: 107D 204C 213B MIL-T-55331
Contextual Info: DP-312 Wideband RF/Pulse Transformer .25-400 MHz vm. GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL DP-312 Type: 50 ohm unbalanced 50 ohm unbalanced ph rev DC isolated The DP series -s co m p o se d of th re e tra n sfo rm e rs o ffe rin g the

Contextual Info: Fully Molded similar to TO-220AC 10A 6 5 V T & 1 5 0 V FSHS10A065 ttfl» Nihon Inter Electronics Corporation Specification is a y h Construction f f lìÉ Application ijlî^ V Æ fè V T V 'f K Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS T a = 2 5 '0 Unless otherwise specified

Contextual Info: TUSB8040 USB 3.0 Four Port Hub Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

byv ultra Fast Recovery Rectifier

Abstract: byv 27 ST 9527
Contextual Info: Te m ic BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features • Controlled avalanche characteristic • L ow forward voltage • Ultra fast recovery time • G lass passivated junction • H erm etically sealed package Applications