RK 251 201 Search Results

Contextual Info: M ITEL DCR1575SY Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4401 - 3.0 DS4401 -3.1 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 4200V DRM 2010A Jt AV

Contextual Info: Features- Benefits_ • Style R J l l . ■ Immersion Sealed . ■ 25 Turn Leadscrew . ■ Threaded Bushing Available ■ Meets MIL-R-94 Requirements ■ Washable ■ High Adjustability

NTE1176

Abstract: NTE1181 NTE1171 pulse metal detector audio agc preamp zener 9v 1w NTE1184 circuits metal detector NTE1174 NTE1177
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE1171 8-Lead Metal Can, See Diag. 200 OP Amp, Vc c = ±18V NTE1172 14-Lead DIP, See Diag. 247 Phase-Frequency Detector, Vcc = 7V NTE1174 14-Lead Staggered DIP, See Diag. 251 TV AFT Circuit Top View O u tp u t v H N o n -In v e r t Input

clarostat resistor

Abstract: B 503 Potentiometers B 8
Contextual Info: Features _ Benefits_ • Style RJ11 . ■ Immersion Sealed . ■ 25 Turn Leadscrew . ■ Threaded Bushing Available .

ca 3140 ic

Contextual Info: MITEL DNB65 Recifier Diode SEMICONDUCTOR DS4175 - 1.3 March 1998 Supersedes Septem ber 1996 version, DS4175 - 1.2 KEY PARAMETERS V RRM 4500V IF av, 2000A Ifs m 31000A APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.

RK 251 204

Contextual Info: Type R H o t-M o ld e d Trim m ing P o te n tio m e te rs Features_ Benefits_ • Style R J11 . ■ Immersion Sealed . ■ 25 Turn Leadscrew .

Contextual Info: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4401-3.0 DCR1575SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 2010A Jt AV 44000A TSM dVdt* 1000V/(is d l/ d t

Contextual Info: @ M ITEL DCR1575SY Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4401 - 3.0 DS4401 -3.1 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. March 1998 KEY PARAMETERS V DRM 4200V 2010A Jt AV 44000A

Belcanto ST 3010

Abstract: atakassette Belcanto ST 3001 Stern Radio VEB Kombinat service-mitteilungen robotron stern elite Sonneberg Phonett
Contextual Info: SERVICE-MITTEILUNGEN V E B INDUSTRIE V E RTR IEB RU ND FU NK UND FE RN SE H EN r a d i o -television AUSGABE: S E IT E AUGUST 1 - ö Import* Zu dan BandgeräteImporten des Jahres '1974- gehören auch die ungarischen Stereo-Kassetten-Tonbandgeräte MK-!»2/MK'lt3

Contextual Info: Preliminary SF1207C • Surface Mount 3.8 x 3.8 x 1.4 mm Package • Complies with Directive 2002/95/EC RoHS Pb 836.5/881.5 MHz SAW Duplexer Absolute Maximum Ratings Rating Value Units 1.2 W CW Input Power Level, 50,000 hours, +50 °C DC Voltage 10 V Operating Temperature Range

Contextual Info: @ MITEL DNB65 Recifier Diode S E M IC O N D U C T O R DS4175 -1 .3 March 1998 Supersedes Septem ber 1996 version, DS4175 -1 .2 KEY PARAMETERS VRRM 4500V IF av, 2000A 'fs m 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■

IC str 1229

Abstract: fairchild 90028 L4W 63
Contextual Info: FAIRCHILD SALES REPRESENTATIVES C A LIFO R N IA CELTEC COMPANY 7380 C lairem ont Mesa Blvd., Suite 109 San Diego, C alifornia 92111 Tel: 714-279-7961 TWX: 910 -33 5-15 12 KANSAS B.C. ELECTRONICS 1015 W est Santa Fe Olathe, Kansas 66061 Tel: 913 -78 2-66 96 TWX: 910 -74 9-64 14

64TI

Contextual Info: A r -A r 28 6 8.5 8tO .25 7 l.5 8 t0 .2 5 TYP 2.54 CENTRES 27 6 6 .0 4 i0 .2 5 6 9 .0 4 tO .2 5 26 6 3 .5 0 t0 .2 5 6 6 .5 0 t0 .2 5 25 6 0 .9 6 t0 .2 5 6 3.9 6tO .25 24 5 8 .4 2 t0 .2 5 6 l.4 2 tO .2 5 23 5 5.8 8tO .25 58.88tO .25 LOCKING FEATURE OPTIONAL

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

mosfet K 2865

Abstract: BF1107 ic sc 6200 passive loopthrough
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

Contextual Info: Microwave Photodiode Receivers 2510A/B 2515A/B 2516A/B/C 2518A/B 4510A/B 4515A/B 4516A/B/C 4518A/B 10450A/B 10455A/B 10456A/B/C 1045 8A/B D S A H T E A E T rtel microwave photodiode receivers are ideally suited for use in analog O Wideband analog signal reception

4518A

Abstract: ORTEL pin photodiode 20 ghz 2510A 2518A D 4515 photodiode ge pin photodiode 10 ghz ortel receiver Ortel microwave photodiode
Contextual Info: 2510A/B 2515A/B 2516A/B/C 2518A/B O 4510A/B 4515A/B 451 6A/B/C 4518A/B 10450A/B 10455A/B 10456A/B/C 1045 8A/B A D S H E rtel microwave photodiode receivers are ideally suited for use in analog Wideband analog signal reception fiberoptic communications. W ith their wide bandwidth and flat response,

Contextual Info: Multilayer chip capacitors have a low residual inductance, an excellent frequency response and minimal stray capacitance since there are no leads. These characteristics enable design to be very close to the theoretical values of the capacitors. SPECIFICATIONS:

RXSP 14

Abstract: RK 251 201-AN AE304 RXMA2 b250 ed rk 251 401-ad RK 251 201 S232 RXKH RXMM 1
Contextual Info: ASEA C a ta lo g u e RK 27-12 E E ditiun 1 S e p te m b e r 1 ^ 7 0 Indicators type RXSP File Ff, P a rt 1 C lO lM jB ll IF lL lE lX r • *• U sed to g e th e r with rela ys Ln p ro te c tiv e p. 2 G e n e ra l lion or p a rt o f it has o p e ra te d .

Contextual Info: @ M ITEL DCR1595SW Phase Control Thyristor SEMICONDUCTOR S u p e rs e d e s N o v e m b e r 1 9 9 7 v e rs io n , D S 4 2 4 8 - 3.2 D S 4 2 4 8 •■3.3 APPLICATIONS ■ High P ow er Drives. ■ High V oltag e P ow er Supplies. ■ D C M otor Control. ■

Contextual Info: V23806-A84-T2 SIEMENS Single Mode 155 MBd ATM 1x9Transceiver with ST Connector Dimensions in mm inches ffl (Lead cross section and standoff size) (2 . 0 ) (a) Centerline sttz zz z z z z z z : (1.0+O.1) .0 28+004 I . 0 4 ±. o o 4 If“ PC board (4.0+0 2 )(a)

N2C2

Abstract: L16C N-8C british
Contextual Info: proLimited Description Rugged lever sw itc h e s available in tw o sizes a c c o m m o d a tin g a m axim um of e ither 2 4 or 4 8 c o m b operated tw in co n ta cte d springs in various s w itc h in g co m b in a tio n s The Keys are designed fo r close pitch panel m o u n tin g and have a

Contextual Info: SIEMENS V23806-A84-T20 Single Mode 155 M Bd ATM 1x9Transceiver w ith Isolated Stud Pins and High Sensitivity w ith ST Connector Dimensions in mm inches m (11.5 max) PC board .453 max thickness , ' (2 . 0 ) (a) .08 View Z (Lead cross section and standoff size)

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20