RJL6013DPE Search Results

RJL6013DPE Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJL6013DPE		Renesas Technology	MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff ( us) typ: -; Package: LDPAK (S)- (1)	Original	PDF	71.28KB	4
RJL6013DPE-00#J3		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 11A LDPAK	Original	PDF		7

Catalog Datasheet	Type	Document Tags	PDF
RJL6013DPE Contextual Info: RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1748-0100 Rev.1.00 Nov 07, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B	Original	RJL6013DPE REJ03G1748-0100 PRSS0004AE-B RJL6013DPE	PDF
Contextual Info: Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 Previous: REJ03G1748-0100 Rev.2.00 Jun 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)	Original	RJL6013DPE R07DS0437EJ0200 REJ03G1748-0100) PRSS0004AE-B	PDF
Contextual Info: Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 Previous: REJ03G1748-0100 Rev.2.00 Jun 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)	Original	RJL6013DPE R07DS0437EJ0200 REJ03G1748-0100) PRSS0004AE-B	PDF
RJL6013DPE Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF