RJK06 Search Results

RJK0652DPB

Contextual Info: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

Contextual Info: Preliminary Datasheet RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 6.2 mΩ typ. Capable of 4.5 V gate drive

Contextual Info: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive

Contextual Info: Preliminary RJK0629DPN N Channel Power MOS FET High-Speed Switching Use REJ03G1873-0100 Rev.1.00 Dec 15, 2009 Features • VDSS: 60 V • RDS on : 4.5 mΩ (Max) • ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1. Gate

RJK0656DPB

Contextual Info: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

RJK0654DPB

Contextual Info: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive

RJK0654DPB

Contextual Info: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance

RJK0659DPA

Contextual Info: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance

Contextual Info: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive

Contextual Info: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

RJK0653DPB

Contextual Info: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

Contextual Info: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive

Contextual Info: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features •    High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

RJK0654DPB

Contextual Info: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features •    High speed switching Low drive current Low on-resistance RDS on = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline

Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features •    High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline

RJK0632

Abstract: R07DS0342EJ0100 RJK0632JPD-00 RJK0632JPD
Contextual Info: Preliminary Datasheet RJK0632JPD Silicon N Channel MOS FET High Speed Power Switching R07DS0342EJ0100 Rev.1.00 May 11, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 29 mΩ typ. Capable of 4.5 V gate drive