RJK03E9DPA Search Results

RJK03E9DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJK03E9DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A WPAK	Original	PDF		7

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)	Original	RJK03E9DPA REJ03G1933-0210 PWSN0008DC-A ca9044	PDF
Contextual Info: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)	Original	RJK03E9DPA REJ03G1933-0210 PWSN0008DC-A d9044	PDF
Contextual Info: Preliminary Datasheet RJK03E9DPA 30V, 35A, 4.3m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	RJK03E9DPA R07DS0935EJ0400 PWSN0008DE-A	PDF
Contextual Info: Preliminary Datasheet RJK03E9DPA 30 V, 35 A, 4.3 m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0300 Previous: REJ03G1933-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive	Original	RJK03E9DPA R07DS0935EJ0300 REJ03G1933-0210) PWSN0008DC-B	PDF