RJK0213DPA Search Results
RJK0213DPA Price and Stock
Rochester Electronics LLC RJK0213DPA-00-J53N-CHANNEL POWER MOSFET |
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RJK0213DPA-00-J53 | Bulk | 226 |
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Renesas Electronics Corporation RJK0213DPA-00#J53Trans MOSFET N-CH Si 25V 60A 8-Pin WPAK(2) EP |
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RJK0213DPA-00#J53 | 111,000 | 235 |
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RJK0213DPA-00#J53 | 111,000 | 1 |
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Renesas Electronics Corporation RJK0213DPA-00-J53Discontinued |
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RJK0213DPA-00-J53 | 1,541 |
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RJK0213DPA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
Original |
RJK0213DPA REJ03G1942-0100 PWSN0008DC-A Chan9044 | |
Contextual Info: Preliminary Datasheet RJK0213DPA 25V, 60A, 2.3m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0943EJ0300 Rev.3.00 Mar 21, 2013 Features • High speed switching Capable of 4.5 V gate drive Low drive current |
Original |
RJK0213DPA R07DS0943EJ0300 PWSN0008DE-A | |
Contextual Info: Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
Original |
RJK0213DPA REJ03G1942-0100 PWSN0008DC-A curren9044 | |
Contextual Info: Preliminary Datasheet RJK0213DPA 25 V, 60 A, 2.3 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0943EJ0200 Previous: REJ03G1942-0100 Rev.2.00 Nov 12, 2012 Features • High speed switching Capable of 4.5 V gate drive |
Original |
RJK0213DPA R07DS0943EJ0200 REJ03G1942-0100) PWSN0008DC-B |