RITB Search Results
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Super Micro Computer Inc MBD-X10DRI-T-B- Bulk (Alt: MBD-X10DRI-T-B) |
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MBD-X10DRI-T-B | Bulk | 1 |
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Glenair Inc FRITB31030R10SL3PF2Electronic Component |
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FRITB31030R10SL3PF2 | 48 |
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RITB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AR95X
Abstract: AZA MARKING CODE AR35 MARKING ALF A-R marking
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MIL-STD-202. 11PWll" AR95X AZA MARKING CODE AR35 MARKING ALF A-R marking | |
mJI 1032
Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
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EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin c17G7b 0D15317 mJI 1032 T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60 | |
RY 227 Tf 227 10A
Abstract: SD oid 3C
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32-Bit RY 227 Tf 227 10A SD oid 3C | |
SM5* sharp
Abstract: P82H SM550 SM552 SHARP SM5 sm5512 23P3i PA2-48 SM550 sharp P6230
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SM550/SM551 /SM552 SM550/SM551/SM552 SM550/SM551/SM552 SM551/SM552 P21Q2 P22Q7 P8ctP83 SM5* sharp P82H SM550 SM552 SHARP SM5 sm5512 23P3i PA2-48 SM550 sharp P6230 | |
sob 214Contextual Info: "HYUNDAI HY52B4DD Series V- 5 1 2 K n B-bit CM DS SRAM PHEUMINAHY DESCRIPTION The HYB2B40D is a high-speed, low pow er and 524.2SB x 9-bits CMDS static RAM fabricated using Hyundai's high perform ance tw in tub CMOS pro le s s technology. This high reliability process coupled w ith innovative circuit |
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HY52B4DD HYB2B40D HYB2B400 HY52B40G 1DED1-11-MAYM HY52B400P HYB204OOLP HYB2B400LLP HYB2B400G sob 214 | |
w512
Abstract: M51220
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AD7712 w512 M51220 | |
1535CT
Abstract: STPS1545CT STPS1535CT
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STPS1535CT/CF STPS1545CT/CF inT0220A ISOWATT220AB, T0220AB ATT22 STPS1535CT STPS1545CT STPS1535CF STPS1545CF 1535CT STPS1545CT | |
BD5013Contextual Info: DRAWING T H IS MADE DRAWING IN IS T HI RD ANGLE U N P U B L IS H E D . COPYRIGHT PROJECTION □ 1ST RELEASED FOR PUBLICATION BY AMP INCORPORATED. R E V IS IO N S BD 48 ALL INTERNATIONAL RIGHTS RESERVED. DESCRIPTION RED RA WN ON REV PER ECN OBS -A OBS -3 |
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BD5013 S-22-90 JAN-96_ | |
Contextual Info: HYUNDAI 512K x B-bit HYZ9FD4D Series CMOS 5.D V-Dnly, Sector Erase Flash Memory Preliminary D ESCRIPTION The HY29F04D is a 4 Megabit, 5.D Vtolts only Flash m em ory device organized as a 512k X 9 bits each. The HY29FD40 is offered in an industry standard 32 pin package which is backward com patible Id 1 M egabit and also |
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HY29F04D HY29FD40 HY29FD4D | |
Contextual Info: D RAW ING THIS MADE DR AW ING IN IS TH IRD ANGLE PRO JECTIO N UNPUBLISHED. REL EA SED BY AMP COPYRIGHT FOR □1ST PUBLI CA TION INCORPORATED. BD ALL INTERNATIONAL RIGHTS RESERVED. -24. 66[.971] 4 - 4 0 SC RE WL OCK 2 PLC A © © © o © DESCRI PTI ON |
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HD-20 irap38585/e JAN-96_ 38S8S_ /home/ssrv026d/dsJ 0J/dep14023/^ | |
bd513Contextual Info: DRAWING T H IS MADE DRAWING IN IS T HI RD ANGLE PROJECTION U N P U B L IS H E D . RELEASED COPYRIGHT BY AMP FOR □ 1ST P U B L IC A T IO N INCORPORATED. R E V IS IO N S BD 48 ALL INTERNATIONAL RIGHTS RESERVED. DESCRIPTION REDRAWN, R E V IS E D - 6 9 . 3 2 ±0 . 3 8 |
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BD5132 BD6177 08-HAR-96 38S8S oie/ssrv026jl/ I/iepJ4023/ampJ8J85/edmi bd513 | |
14013
Abstract: USC4 SECME 47pJ F 182 CAI MC14013
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DD50FContextual Info: H Y U N D A I H Y 5 2 2 5 6 B - I 32K X B-bit S e r i e s CMOS SRAM PREUMINAHY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,756 x B-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit |
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HY62256B-I HY52256B-I HYB225EQ-I 1DCD5-11-MAY94 HY62255B-I HY52256BLP-I HY52256BLLP-I HY52256BLJ-I HYB2256BLU-I HY52256BLT1-I DD50F | |
5331mContextual Info: •HYUNDAI H Y 52 B1 OOA-I S e rie s 1 2 0 K Jl B - b l t CM D 5 SRAM PRELIMINARY DESCRIPTION The HYB2B1DOA-I is a high-speed, low power and 131,D72 a B-bils CMOS static RAM fabricated using Hyundai's high pBrform anca twin tub CMOS process technology. This high reliability process couplBd with Innovative circuit |
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HY52B1 HY62B1 002IQ 1DD03-11-MAYB4 HY52B1D HY62B1DOALP-I HY6ZB100ALLP-I HY52B1DOALG-I HY52B1DOALLG-I HY62B1DOALTM 5331m | |
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51 ti jbr
Abstract: elis 1024 cmos 9805 ,C M/ipc+9805
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12-Bit 10-Bit 64-Pin 12-Bit/10-Bit 00010S AD9807/ AD9807/AD9805 51 ti jbr elis 1024 cmos 9805 ,C M/ipc+9805 | |
Contextual Info: DRAWING T H IS MA DE DRAWING IN IS T H IR D ANGLE U N P U B L IS H E D . COPYRIGHT PROJECTION RELEASED BY AMP □1ST FO R P U B L IC A T IO N INCORPORATED. BD ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S 77 DESCRIPTION REDRAWN S REVI SED, ECN BD3361 |
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BD3361 HD-20 -APR-94_ amp33732 p/arnp33732/edm 207B28 | |
MB81C1000
Abstract: MB81C1000-80
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MB81C1000-70/-80/-10/-12 MB81C1000-12 IP-18C-A 1B014S-4C MB81C1000-70 MB81C1000-80 MB81C1000-10 26-LEAD MB81C1000 MB81C1000-80 | |
Contextual Info: HYUNDAI HY2BFD4D Series _ 512K II B-bit CMOS 5V/12V, Buoi Bloch Flash Mwnory Preliminary DESCRIPTION The HY2BFD40 b o o l b lo ck flash m em ory is a very high performance 4 M bit m em ory organized as 512 Mbytes ol B bits each. Seven separately erasable blocks including a Hardware-Lockable boat b lo ck | 15,304 byTBs"J7two |
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V/12V, HY2BFD40 HYZBF040-90 HYZBF040-120 1FAD1-11-MAY | |
ICCH83
Abstract: Micro Series Universal Linker H8/300 Series Cross Assembler Users Manual 80386 programmers manual H8/500 assembler H8/500 Series Cross Assembler Users Manual EMM386 h8 family H8/300 Series Cross Assembler H8/300H Tiny Series
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H8/300 H8/300H H8/300 H8/300, H8/300H. ICCH83 Micro Series Universal Linker H8/300 Series Cross Assembler Users Manual 80386 programmers manual H8/500 assembler H8/500 Series Cross Assembler Users Manual EMM386 h8 family H8/300 Series Cross Assembler H8/300H Tiny Series |