RISE TIME OF PHOTO TRANSISTOR Search Results
RISE TIME OF PHOTO TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
RISE TIME OF PHOTO TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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photo sensor s4810Contextual Info: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package. |
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S4810, S6289 S4810 S6289 S4810: S6289: SE-171 KPIC1005E06 photo sensor s4810 | |
Contextual Info: PHOTO IC Low-voltage operation photo IC S6289 Operation at low voltage from 2.2 V The S6289 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package. |
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S6289 S6289 SE-171 KPIC1005E05 | |
S4810
Abstract: S6289 photo sensor s4810
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S4810, S6289 S4810 S6289 S4810: S6289: SE-171 KPIC1005E04 photo sensor s4810 | |
photo sensor s4810
Abstract: S4810 1BW TRANSISTOR S6289
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S4810, S6289 S4810 S6289 S4810: S6289: SE-171 KPIC1005E03 photo sensor s4810 1BW TRANSISTOR | |
photo sensor s4810Contextual Info: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package. |
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S4810-100 S4810-100 SE-171 KPIC1072E03 photo sensor s4810 | |
S4810
Abstract: hl 05
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S4810-100 S4810-100 SE-171 KPIC1072E02 S4810 hl 05 | |
transistor 701 2kContextual Info: Transmissive Photosensors Photo Interrupters CNA1301H Photo Interrupter 4-0.5 0.5 3.0 (1.0) 1.5±0.1 2-ø0.7±0.1 2 4 3 4 1 3 Pin connection V IF 50 mA 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO |
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CNA1301H CNA1301H transistor 701 2k | |
MAX280
Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
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SSC-PTR202-IX0 SSC-QP-0401-06 SSC-PTR202 MAX280 SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor | |
OST-9N15
Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
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OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303 | |
NJL7502LContextual Info: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 µA typ. Condition : White LED, 100Lux 3. Lead pin package |
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NJL7502L NJL7502L 100Lux | |
00004B
Abstract: PS302
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PS302 I-100 00004B PS302 | |
color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
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KDT3002A KDT3002A color sensitive PHOTO TRANSISTOR Rise time of photo transistor npn photo transistor 3mm photo transistor | |
transistor circuit
Abstract: 357 photo
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2x10a 5x10a 5x102 transistor circuit 357 photo | |
PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
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HI-T70MB HI-T70MB 200Lux 2000Lux PHOTO TRANSISTOR Rise time of photo transistor photo transistor high current | |
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FC101Contextual Info: C INTERFACE INC IDE D | QGE3BÔ3 00[]04a4 4 | N '• ia m e y • STANLEY PHOTO TRANSISTOR ■ Package Dimensions ~ • •- FS-511 : I ■ '4 ^ 1 ■ FEATURES (1 High accuracy by use of special resin package with central chip (2) High photo current {Typ. 2.5m A at Ee = 10mW/cm2 ) |
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FS-511 10mW/cm2) FC-101 FS-51! FC101 | |
photo transistor
Abstract: FS-511 FC-101 photo transistor high current
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FS-511 10mW/cm2) FC-101 FC-101 photo transistor FS-511 photo transistor high current | |
Contextual Info: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor |
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KDT3002A KDT3002A | |
OC401Contextual Info: O K I electronic components OC401 PHOTO COUPLER GENERAL DESCRIPTION The C C40 is a combination of a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package and ensures dielectric voltage of 2,500 V. FEATURES • High-speed response : 140 ns |
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OC401 OC401 | |
Contextual Info: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec |
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phototransistor 302
Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
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OST-302 OST-302 1000Lux 2000Lux 2856K phototransistor 302 photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor | |
Contextual Info: Visible Light Photo Reflector Product No: MTRS1070 Peak Emission Wavelength: 700nm The 700nm reflective sensor consists of a 700nm visible emitter and high sensitivity photo transistor in the same package. The black molded housing reduces the effect of external ambient light. Custom emitter/ |
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MTRS1070 700nm 700nm | |
TRANSISTOR SMD MARKING CODE p1
Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
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EL852 DPC-0000056 TRANSISTOR SMD MARKING CODE p1 EL series SMD transistor 815Y smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR | |
Contextual Info: INFRARED LED + PHOTO TRANSISTOR TLP833 TLP833 COPIER, PAGE PRINTER, FACSIMILE VCR, M IC R O W A V E OVEN, AIR CONDITIONER AUTOM ATIC VENDING M ACHINE, TERM IN A L EQ U IPM EN T IN BANKING FACILITIES VA RIO US POSITION DETECTION SENSOR TLP833 is a photo interrupter which uses a high |
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TLP833 TLP833) TLP833 UL94-V0) Ta-25Â | |
toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
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TPS617 TLN107A, TLN107A driven40mm TPS617 toshiba 4b1 4b1 toshiba photo interrupter darlington sensor TLN107 |