RISE TIME AVALANCHE PHOTODIODE Search Results

Avalanche photodiode APD

Contextual Info: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

Contextual Info: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

Contextual Info: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

LEMO 3-Pin

Abstract: LEMO D-10999 HSA-X-2-40 FEMTO Messtechnik GmbH FEMTO Messtechnik Oscilloscope Wideband preamplifier
Contextual Info: Datasheet HSA-X-2-40 2 GHz High-Speed Amplifier Features Bandwidth 10 kHz . 2 GHz Rise Time 180 ps Gain 40 dB Input VSWR 1 : 1.1 Integrated Bias Circuit Applications Preamplifier for ultra-fast Detectors Microchannel-Plates, Photomultipliers, Avalanche-Photodiodes and PIN-Photodiodes

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

ALMG

Abstract: LEMO LEMO 3-Pin "transient recorder" D-10999 HSA-X-1-40 LEMO 3 Pin
Contextual Info: Datasheet HSA-X-1-40 1.1 GHz High-Speed Amplifier Features Bandwidth 10 kHz . 1.1 GHz Rise Time 320 ps Gain 40 dB Noise Figure 1.9 dB Integrated Bias Circuit Applications Preamplifier for ultra-fast Detectors Microchannel-Plates, Photomultipliers, Avalanche-Photodiodes and PIN-Photodiodes

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

TO52

Abstract: SSO-AD-230-TO52-S1
Contextual Info: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

TO52 package

Contextual Info: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Contextual Info: SSO-AD-1900-TO5i SSO-AD-2500-TO5i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 1900 or 2500 µm diameter active area low capacitance Parameters: SSO-AD-1900 TO5i active area 1950 mm ∅ 3,0 µm 2520 mm ∅ 5,0 µm

APD500-LCC

Contextual Info: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.

C30737LH-500-92

Abstract: CERAMIC LEADLESS CHIP CARRIER
Contextual Info: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,

Contextual Info: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

C30919E

Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
Contextual Info: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

Contextual Info: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30902S

Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Contextual Info: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip

C30902EH

Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

C30902S

Abstract: C30817E C30817 C30955EH
Contextual Info: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager