RISE TIME APD Search Results

IC 571

Abstract: 118-70-74-591 394-70-74-591 LM335 OM350
Contextual Info: Cooled - Large Area APDs Electro-Optical Characteristics All specifications apply when APD is operated at 0ºC and at a gain of 300. 3 mm Active Diameter Bias Voltage Range† mm 3 5 10 16 (V) 1700 to 2000 Temperature Capacitance Dark Current Rise Time Noise Current

Avalanche photodiode APD

Contextual Info: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

APD500-LCC

Contextual Info: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.

APD230-LCC

Contextual Info: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.

Contextual Info: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

Contextual Info: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

MAX3726

Abstract: analog PIN Photodiode 3GHz
Contextual Info: 19-3386; Rev 0; 8/04 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ Low 115mW Power Consumption ♦ 16-Pin QFN Package with 3mm x 3mm Footprint ♦ 70ps Rise and Fall Time ♦ Loss-of-Signal with Programmable Threshold

TO52

Abstract: SSO-AD-230-TO52-S1
Contextual Info: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Contextual Info: SSO-AD-1900-TO5i SSO-AD-2500-TO5i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 1900 or 2500 µm diameter active area low capacitance Parameters: SSO-AD-1900 TO5i active area 1950 mm ∅ 3,0 µm 2520 mm ∅ 5,0 µm

10G APD chip

Abstract: Photodiode apd RSSI 10G APD DS1858 MAX3744 MAX3748 MAX3748A MAX3748AETE MAX3748ETE
Contextual Info: 19-2717; Rev 1; 7/03 KIT ATION EVALU E L B AVAILA Compact 155Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ 16-Pin QFN Package with 3mm ✕ 3mm Footprint ♦ Single +3.3V Supply Voltage ♦ 86ps Rise and Fall Time A received-signal-strength indicator RSSI is available

300-pin

Abstract: 300pin msa dwdm TPD-MR-04-XXXXXXXX
Contextual Info: TPD-MR-04-XXXXXXXX Features Description  Compliant with the 300 pin SFF MSA TPD-MR-04-XXXXX C-band DWDM 300 pin SFF  Support multi-rate from 9.953Gb/s to 11.3Gbps transponder  C-band DWDM laser and PIN/APD receiver applications with reaches of up to 40km, which

10G APD RX

Contextual Info: Preliminary Datasheet TPD-MR-08-34CDL5A Features Description z Compliant with the 300 pin SFF MSA TPD-MR-08-34CDL5A z Support multi-rate from 9.953Gb/s to 11.3Gbps transponder is intended for SONET/SDH system z C-band DWDM laser and PIN/APD receiver applications with reaches of up to 80km, which

C30737LH-500-92

Abstract: CERAMIC LEADLESS CHIP CARRIER
Contextual Info: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

EG*G Optoelectronics

Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Contextual Info: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c

MY9221

Abstract: MY-Semi
Contextual Info: MY9221 MY-Semi 12-Channel LED Driver With Grayscale Adaptive Pulse Density Modulation Control General Description Features The MY9221, 12-channels R/G/B x 4 c o n s t a n t current APDM (Adaptive Pulse Density M o d u l a t i o n ) LED driver, operates over a 3V ~ 5.5V

APDS-9005

Abstract: Ambient Light Sensor APDS-9005-020 photo sensor 700 PHOTO SENSOR of application SMD LQ3 APDS9005 makrolon photo resistor light
Contextual Info: APDS-9005 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Description Features The APDS-9005 is a low cost analog-output ambient light photo sensor in miniature chipLED lead-free surface mount package. It consists of a photo sensor, whose spectral response is close to the CIE standard photopic