RIN B 75 Search Results

SP802512H-03

Abstract: SP802512M-03 BP802524M-03 SP802524M-03 BP802524H-03 BP8-02 sp802524h SP8025121-03 80X80X25 SP802524H-03
Contextual Info: DC 8025-03 SIZE : 80x80x25m m 3.15“x3.15"x0.98M C O N S T R U C T IO N : G la s s fib e r r e in fo r c e d p lastic: Im p eller a n d h o u sin g PBT a r e UL 9 4 V -0 ra tin g O P E R A T IN G TEM PERATURE : Ball b e a rin g - 30*0 t o + 75*C S le e v e b e a rin g

a 104 g

Abstract: P300D
Contextual Info: OTHER PRODUCTS Ceramic Substrate < O u r h ig h p re c isio n th ic k film p rin tin g te c h n o lo g y w here A g -P d b a se d c o n d u cto rs, low h ig h -fre q u en c y loss A g -P t b a se d c o n d u cto rs and C u ba se d c o n d u cto rs c an be p rin ted o n 9 6% su b strates>

Contextual Info: Configuration EPROMs for FLEX Devices June 1996, ver. 5 Data Sheet Features S erial E PR O M fam ily fo r c o n fig u rin g FLEX d ev ice s S im p le, e asy -to -u se 4 -p in in terfa ce to FLEX d ev ice s L ow c u rre n t d u rin g c o n fig u ra tio n a n d n e a r-z e ro s ta n d b y c u rre n t

Contextual Info: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).

LB1294

Contextual Info: O rd e rin g n u m b e r : EN 1 1 6 3 C Monolithic Digital 1C LB1294 6-Channel Driver Array Features . 6 independent Darlington drivers . High voltage 60V , high output source current (60mA) . Ideally suited for interface between different supply voltage systems

N and P MOSFET

Contextual Info: O rd e rin g n u m b e r: EN 4895 _ FX855 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu re s • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching

tda 2038

Abstract: 2SA417 2SA1417 2SC3647
Contextual Info: O rd e rin g n u m b e r: EN 2006A 2SA1417/2SC3647 N o .2006A SA W O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . Highbreakdown voltage and large current capacity. . Fastswitching time.

Contextual Info: O rd e rin g n u m b e r:EN 1044B LB1291 NO.1044B Monolithic Digital IC SANYO i 8-Channel Driver Array The LB1291 has been designed for interfacing between low level digital devices and fluorescent display tubes. Its 8-channel independent Darlington output

CQ 523

Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
Contextual Info: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the

2SC2078

Abstract: 2sc2078 Transistor RF POWER TRANSISTOR NPN 2sc2078 2SC207 68p33 2sc207827mhz
Contextual Info: O rde rin g n u m b e r :EN 462E 2SC2078 NPN Epitaxial Planar Silicon Transistor 2 7MHz RF Power Amp Applications Absolute Haximum Ratings at Ta=25°C Collector-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEBO Collector Current

CA06COM-E

Abstract: CA06COMF28 ca06com-f28 1-20UNEF-2B CA06COMPG14S ca06com-e10sl
Contextual Info: CA-COM Straight plug, C lass PG CAO6COM-PG-B CAO6 C O M -P G -B is a stra ig h t p lug fo r o ptio na l use o f heat sh rin k boots o r PG term in atio n s. It m ates w ith rece pta cles CAOOCOM-B, C A 0 1 C O M -B and C A 0 2C O M -E -B . Order Ref. Pin Insert*

MX34

Contextual Info: jk m. REV. S 0 E 9 0 I PS #-J! B DATE DCN NO. SECT. A-A w m ft & $ m APPD. a i CHK. DR. D E SC RI PT IO N & B APPD. 'ON ONIMVÜCD-É-gm^ Ik □ 4 1 1 ± 0 . B ( 26.32 (19.7) ±0.3 18.5 in o •H IDENTIFYING IfcJglJV — 9 MARK in . 0 m -H ■ m . rin S

31Q7A

Abstract: sanyo AG
Contextual Info: O rd e rin g n u m b e r : EN 31Q7A ; _ F C 8 0 1 No.3107A Silicon Epitaxial Planar Type Composite Diode for H igh-Speed Sw itching Applications Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting

30621

Contextual Info: O rd e rin g n u m b e r: EN3Q62A FC 120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: FEATURES PSM Series • 750 p ie ce s per 13.5 inch reel, 32m m tape High-Current Surface-Mount Inductors • Flexible J-bend term inal or su p erior solder-joint integrity Recessed-foot mount • R e c e ss e d b a se for e a sy clean up after reflow so ld e rin g

Contextual Info: I a n d o rd e rin g in fo r m a tio n M A T E R IA L S A N D F IN ISH E S Datalamp Holder For Datalites covered by M IL -L -3 6 6 1 B , see pages 1 8 B — 20B. Note: Sim ilar assemblies accommodating nonreplaceable lamps - for m ounting in 3 / 8 " clearance

386SX CIRCUIT diagram

Contextual Info: INTEGRATED CIRCUIT bflE » • 4025750 □ 0 0 Q 7 ‘10 0 7 b ■ IGS ICS9131 Integrated Circuit System s, Inc. Advance Information 32 kHz Motherboard Frequency Generator General Description Features T he IC S 9131 offers a tiny fo o tp rin t solution for g en eratin g

2SC4364

Contextual Info: O rd e rin g n u m b e r :E N 3008 _ 2 S C 4 3 6 4 NPN Epitaxial Planar Silicon Transistor VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications Features • Low-voItage operation fr = 3.0GHztyp VCE:=3V MAG= lldB typ (VCE = 3V,IC= 3mA)

Contextual Info: I O rd e rin g n u m b e r : EN 1482B LB 1249 N0.1482B Monolithic Digital IC SA\YO i Active-Low Input, 8-Unit,High-Current, Low-Saturation Driver Applications . 4-phase stepping motor driver o f 2 channels. . Especially suited for X-Y axis plotter printer driver.

Contextual Info: O rd e rin g num ber: EN 4657 FP303 No.4657 s a TR : N PN E pitaxial P lan ar Silicon T ransisto r SBD : Schottky B arrier Diode t Y O DC-DC Converter Applications F e a tu re s • Com posite type w ith N PN tran sisto r and Schottky b a rrier diode facilitates high-density m ounting.

Contextual Info: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage

Contextual Info: SANYO S E M I C O N D U C T OR CORP b3E D • 7 eH 7 D 7 b 0Q12bSl =153 « T S A J O rd e rin g n u m b e r: E N 4063 Monolithic IC LA5503 No. 4063 Multi-function, Multiple Voltage Power Supply OVERVIEW PACKAGE DIMENSIONS The LA5603 is a multi-function, low dropout voltage,

2SA1730

Contextual Info: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed

Contextual Info: RML Hi Frequency Power Inductors T h e n e w R M L lin e o f s h ie ld e d in d u c to rs c o n s is ts o f 4 s e rie s o f p o w e r c h o k e s d iffe rin g in s ize a n d p o w e r c a p a b ility , c o v e rin g a w id e ra n g e o f in d u c ta n c e a n d