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    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Search Results

    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    54LS298/BEA
    		Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    		Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    laser diode RW

    Abstract: laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor
    Contextual Info: 1.00 05.06.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry/Perot Laser with Ridgle Waveguide RWL DATA SHEET RW Laser EYP-RWL-0730-00020-1500-SOT02-0000 Absolute Maximum Ratings Symbol Unit Operational Temperature at case


    Original     		eyp-rwl-0730-00020-1500-sot02-0000laser diode rwlaser diode specification sheetfabry perot laser spectrum+4fabry perottem00laser diode pinoutdiode device data on semiconductor PDF

    tunable laser diode

    Abstract: TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000
    Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0870-06010-0750-SOT01-0000


    Original     		eyp-rwe-0870-06010-0750-sot01-0000tunable laser diodetpl 250 PDF

    MW110

    Abstract: tunable laser diode laser diode lifetime EYP-RWE-0850-05010-1500-SOT02-0000
    Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0850-05010-1500-SOT02-0000


    Original     		eyp-rwe-0850-05010-1500-sot02-0000mw110tunable laser diodelaser diode lifetime PDF

    tunable laser diode

    Abstract: Laser Diode 10 pin laser diode pinout laser
    Contextual Info: Version 0.91 04.11.2009 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0980-08020-1500-SOT02-0000


    Original     		eyp-rwe-0980-08020-1500-sot02-0000tunable laser diodelaser diode 10 pinlaser diode pinout+1laser PDF

    EYP-RWE-0790-04000-0750-SOT01-0000

    Abstract: laser diode pinout laser 790 nm
    Contextual Info: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000


    Original     		eyp-rwe-0790-04000-0750-sot01-0000laser diode pinoutlaser 790 nm PDF

    EYP-RWE-0840-06010-1500-SOT02-0000

    Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
    Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000


    Original     		eyp-rwe-0840-06010-1500-sot02-0000780 laser diodetunable laser diode840 nm gaas+10/840 nm gaas PDF

    Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		eyp-rwl-0790-00100-1500-sot02-0000 PDF

    EYP-RWE-0940-08000-0750-SOT01-0000

    Contextual Info: Version 0.90 09.10.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0940-08000-0750-SOT01-0000


    Original     		eyp-rwe-0940-08000-0750-sot01-0000 PDF

    1060 nm GaAs Laser Diode

    Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
    Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000


    Original     		eyp-rwe-1060-10020-0750-sot01-00001060 nm gaas laser dioderidge waveguide semiconductor lasertunable laser diode+2gaas diode nmlaser diode lifetime PDF

    ridge waveguide semiconductor laser

    Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 150 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		eyp-rwl-1080-00080-0750-sot01-0000ridge waveguide semiconductor laser PDF

    1060 nm GaAs Laser Diode

    Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		eyp-rwl-1060-00100-0750-sot01-00001060 nm gaas laser diode PDF

    laser diode 780 nm

    Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		eyp-rwl-0780-00100-1000-sot01-0000laser diode 780 nm PDF

    Laser diode Fabry-Perot

    Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
    Contextual Info: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser


    Original     		eyp-rwl-1120-00050-1300-sot02-0000laser diode fabry-perotlaser diode lifetimetem00+1ridge waveguide semiconductor laser PDF

    Contextual Info: SPECTROSCOPIC DFB-LASERS: SPECDILAS -D INTRODUCTION HHI has been involved in the development of semiconductor DFB lasers from its early start in the 80’s. Based on this experience, custom design of multi quantum well ridge waveguide laser structures is available for applications in production control,


    Original     		PDF

    Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets


    Original     		PDF

    optical source

    Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
    Contextual Info: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength


    Original     		14-pinoptical sourcefabry-perot 1550 nmfabry-perot 1550 nm butterfly+7laser inplaser transmitterdatasheet laser 1550 spectrallaser 1550 nmlaser transmitter 1550 nmto56 laserto-can PDF

    U-CP-9850044

    Contextual Info: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)


    Original     		u-cp-9850044980nm PDF

    U-CP-80B0065

    Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
    Contextual Info: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm


    Original     		u-cp-80b0065808nmdiode laser 808nm 200mwto-can+3808nm laser diodelaser diode bare chiplaser diode 808nm PDF

    U-CP-6505011

    Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
    Contextual Info: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		u-cp-6505011650nm300um100um+3650nm 5mw laser650nm 5mw laser diodelaser diode bare chip PDF

    TO18 Laser 808nm 300 mw

    Abstract: IR Laser diode laser diode bare chip
    Contextual Info: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		u-cp-80e0075-preliminary808nm886-3-gto18 laser 808nm 300 mw+2ir laser diodelaser diode bare chip PDF

    U-CP-6505001

    Abstract: laser diode bare chip
    Contextual Info: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		u-cp-6505001650nm300um100um+1laser diode bare chip PDF

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Contextual Info: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		u-cp-80c0055-preliminary808nm886-3-g808nm 300mw laser diode+6laser diode 300mwto-can808nm 300mwto18 laser 808nm 300 mw808nm laser diodelaser diode bare chip PDF

    Contextual Info: U-CP-6505010 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505010 •Specifications 1 Size : (2) Device: (3) Structure 250*250*100 m Laser diode uncoating chip double channel , single ridge waveguide 100μm ■External dimensions(Unit : μm)


    Original     		u-cp-6505010650nm300um100um PDF

    Laser Diode 808 300 mw

    Contextual Info: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		sld-808-p200-c-04808nm886-3-485-268inlaser diode 808 300 mw PDF