RIDGE WAVEGUIDE SEMICONDUCTOR LASER Search Results

laser diode RW

Abstract: laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor
Contextual Info: 1.00 05.06.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry/Perot Laser with Ridgle Waveguide RWL DATA SHEET RW Laser EYP-RWL-0730-00020-1500-SOT02-0000 Absolute Maximum Ratings Symbol Unit Operational Temperature at case

tunable laser diode

Abstract: TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0870-06010-0750-SOT01-0000

MW110

Abstract: tunable laser diode laser diode lifetime EYP-RWE-0850-05010-1500-SOT02-0000
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0850-05010-1500-SOT02-0000

tunable laser diode

Abstract: Laser Diode 10 pin laser diode pinout laser
Contextual Info: Version 0.91 04.11.2009 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0980-08020-1500-SOT02-0000

EYP-RWE-0790-04000-0750-SOT01-0000

Abstract: laser diode pinout laser 790 nm
Contextual Info: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000

EYP-RWE-0840-06010-1500-SOT02-0000

Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000

Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

EYP-RWE-0940-08000-0750-SOT01-0000

Contextual Info: Version 0.90 09.10.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0940-08000-0750-SOT01-0000

1060 nm GaAs Laser Diode

Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
Contextual Info: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000

ridge waveguide semiconductor laser

Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 150 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

1060 nm GaAs Laser Diode

Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

laser diode 780 nm

Contextual Info: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the

Laser diode Fabry-Perot

Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
Contextual Info: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser

Contextual Info: SPECTROSCOPIC DFB-LASERS: SPECDILAS -D INTRODUCTION HHI has been involved in the development of semiconductor DFB lasers from its early start in the 80’s. Based on this experience, custom design of multi quantum well ridge waveguide laser structures is available for applications in production control,

Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

optical source

Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
Contextual Info: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength

U-CP-9850044

Contextual Info: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)

U-CP-80B0065

Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
Contextual Info: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm

U-CP-6505011

Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Contextual Info: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

TO18 Laser 808nm 300 mw

Abstract: IR Laser diode laser diode bare chip
Contextual Info: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

U-CP-6505001

Abstract: laser diode bare chip
Contextual Info: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)

U-CP-80C0055-preliminary

Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Contextual Info: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

Contextual Info: U-CP-6505010 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505010 •Specifications 1 Size : (2) Device: (3) Structure 250*250*100 m Laser diode uncoating chip double channel , single ridge waveguide 100μm ■External dimensions(Unit : μm)

Laser Diode 808 300 mw

Contextual Info: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)