RG SERIES Search Results

chopper transformer

Abstract: welding transformer D-68623
Contextual Info: FID 35-06C IC25 = 38 A = 600 V VCES VCE sat typ. = 1.9 V Fast IGBT Chopper in ISOPLUS i4-PACTM 3 Preliminary data 4 1 1 5 2 Features IGBT ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 10 Ω; TVJ = 125°C

wc 2c

Contextual Info: SMJ4416 16.384-WORD BY 4-BIT DYNAMIC RAM AUGUST 1980 JO PACKAGE 1 6 ,3 8 4 x 4 O rg anizatio n TO P V IE W S ingle 5 -V S u p p ly ( ± 1 0 % T olerance) g P erfo rm a nce Ranges ACCESS T IM E • DQ1 C C2 DQ 2C Ul8 Dvss 17 3 D Q 4 3 16 4 15 "2C A S "2D Q 3

Contextual Info: MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)

Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 x 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 ¡lA Typ Ordering Information

12n90c

Abstract: 125OC
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C

Contextual Info: CM150DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 150 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 9 8 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R

Contextual Info: 6MBI75S-120 IGBT Modules IGBT MODULE S series 1200V / 75A 6 in one-package Features • Compact package · P.C.board mount · Low VCE(sat) Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines

Contextual Info: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: 7MBR50SA060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: CM100DU-24NFH Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts TC MEASUREMENT POINT A D N M K C2E1 K E2 F E C1 E2 G2 S B G1 E1 H G F P - NUTS (3 TYP) Q - (2 TYP)

Contextual Info: CM400DU-24NFH Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts TC MEASUREMENT POINT A D M M L E2 G2 V H J C2E1 E2 C1 G1 E1 E U W V B HR V V N Y X L Q Q G P S - NUTS (3 TYP)

Contextual Info: CM600DU-24NFH Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts TC MEASUREMENT POINT A D M M L E2 G2 V H J C2E1 E2 C1 G1 E1 E U W V B HR V V N Y X L Q Q G P S - NUTS (3 TYP)

Contextual Info: 7MBR35SB120 IGBT Modules IGBT MODULE S series 1200V / 35A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

15N100C

Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C

45N120B

Contextual Info: IXSH 45N120B I = 75 A C25 IXST 45N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.0 V High Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200

Contextual Info: CM600HA-24A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD A-Series Module 600 Amperes/1200 Volts H G E F D J W - DIA. (4 TYP.) K y P Q E C E x N M L G C B A R U - THD. (2 TYP.) V -THD. (2 TYP.) S T

15N120

Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

SiHB12N60E

Abstract: s1206
Contextual Info: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13

microdot 10-32 male connector

Abstract: STK 2058 IV RG142 velocity factor Steinel hl1802e manual Steinel hl1802e stk 420-150 rf-asmb-8 RTD-50-M-00 STK 795 820 408-08521
Contextual Info: RF Connectors Table of Contents Military Qualified Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7003 N Series Connectors MIL-C-39012 50 Ohm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7004, 7005

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)

Contextual Info: TECHNICAL DATA SHEET 1/2 R141.292.000 STRAIGHT JACK SQUARE FLANGE Series : BNC CRIMP TYPE - CABLE 5/50 S All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - MATERIALS BRASS BERYLLIUM COPPER PTFE

ap2763

Abstract: CISS 3010
Contextual Info: AP2763W-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 750V RDS ON 1.45Ω ID ▼ Simple Drive Requirement 8.0A G S Description AP2763 series are specially designed as main switching devices for

Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

10N70P

Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for