RG 418 Search Results

BS 4752 MCCB

Abstract: digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07
Contextual Info: Series G Molded Case Circuit Breakers 15 – 2500 Amperes for UL, CSA & IEC Applications July 2004 Frame Sizes EG through RG 15 – 2500 Amperes Vol. 1, Ref. No. [01] Description Page Standards Standards . . . . . . . . . . . . . . . . General Information . . . . . . . .

Contextual Info: CAD DRAWING - NO MANUAL REVISIONS 334 [ 8, 48] , 418 10, 62] , 308 [ 7, 82] NOTES! 1, 2, 3, DESIGN AND INTEREACE PER I, D, S, -13, CAP, DISK & EERRULE SHIPPED LOOSE, USE CRIMP DIE , 151 HEX M22520/5-37 Y-138 DIE SET, 4, EDR USE WITH M17/152 (RG-316DS) OR EQUIVALENT CABLES,

Contextual Info: SQ4425EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.012 RDS(on) () at VGS = - 4.5 V 0.019 ID (A) • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: SQ4425EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V 0.012 RDS(on) () at VGS = - 4.5 V 0.019 ID (A) • 100 % Rg and UIS Tested • Material categorization:

SUP90N15-18P

Abstract: SUP90N15-18P-E3
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUP90N15-18P

Abstract: SUP90N15-18P-E3
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUP90N15-18P

Abstract: SUP90N15-18P-E3
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

land pattern for TSOP input id

Abstract: SQS423EN-T1-GE3
Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V

SUM75N15-18P-E3

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

SUM75N15-18P-E3

Abstract: S-82349-Rev 75D diode
Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUM75N15-18P-E3

Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

S8018

Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

u707

Abstract: KC-59 KTJ-113, CP-465, KTD-166
Contextual Info: GSD R E V IS IO N S C -J CN 34481 C REDRAWN JCA 06/07/93 o CO fO ro 1 o CJl o ro .1 .57 D. REF. I I STAMP: 91836 M39012/20-0502 KC-59—418 XX XX DATE CODE NOTES' 1. FOR USE WTH RG-180/U CABLE. 2. FOR CABLING NSTKUCT10NS SEE CP-465. 3. FOR CABLE TRIMMING USE KTJ-113 AND KTD-166.

PJ-051

Abstract: MIL-P-642A PJ-047 IBM 7362211 736221 7362211 216B USES FOR BELDEN CABLE 7362211 PJ 77 MIL-P-642
Contextual Info: TYPE LC Plugs A A B B B A A B FIG.3 FIG.2 FIG.1 Cable Group RG 17, 218 Nemal Part Nº Military Nº UG UG UG UG UG UG UG UG 154 215B 216B 352 Fig Nº 154/U 215B/U 216B/U 352/U 1 4 3 2 Dimensions Notes A In. B 3.06 2.50 2.50 2.25 1.50 1.20 2.25 2.00 Plug - Uses Cable Conductor

Contextual Info: A S ch lu m b e rg e r C o m p a n y 93419 64 x 9-Bit Static Random Access Memory B ipolar Division T T L B ipolar M em ory Description The 93419 is a 576-bit read/w rite Random Access M em ory RAM , organized 64 w ords by nine bits per word with open c o lle cto r outputs. It is ideally suited for

KU 607 VB

Abstract: SM16JZ42 SM16JZ42A SM16GZ42 SM16GZ42A
Contextual Info: 154- - 2 * • «•»B#* SM 16 rG, J j Z 4 2 O %% t ' y « S t 16A 0 7 r x F > f ií, r a= 25°C) * é * É « j£ (2500V, A C ) üli ^5- /ûR.W ■ «*£ 4 * Vdsm VnpM It<hmsi Itsm I2-t T T - J2 ( 1 3 - 2 2 A IA ) SM16GZ42 SM16JZ42 400 600 16 ( Tr=82‘C )

Contextual Info: H in li Ih ! i H S i’ K A • \ 1( > ■{ ! H J.lliji i v il)'- S't Ni ii.OIWiJ-, u iu liiii: i! i \ \ Features • B urst re a d , sin g le w r ite o p e ra tio n • LVTTL c o m p a tib le I / O • O rg a n iz a tio n - 131,072 w o rd s x 32 bits x 2 banks

SM3JZ47

Abstract: SM16G16 SM3GZ47 SM16D16
Contextual Info: 158 - — * S M 3 rG, J . Z 4 7 £ T T - 7 1 3 - 1 O H I A • * » 0 # # c> u cm vh* 3A c (7 , j = 2 5 °C j 7 l £l ±_ h #^ (AC1500, I M lOV/'/ís ni! ) iUl] ¡D R » ■ «*£ *» riÜ V %' SM 3 G Z4 7 S M 3 JZ 4 7 400 ôOO V d sm # 30 (50Hz, I tsm