RG 225 INSERTION LOSS Search Results

R282

Contextual Info: TECHNICAL DATA Page R185.177.000 RIGHT ANGLE PLUG CRIMP TYPE CABLE 11/50 D 50 NOMINAL IMPEDANCE 0-7.5 FREQUENCY RANGE n V.S.W.R # + CABLES :KX 13 RG 214 RG 225 RG 393 GHz O x F GHz Maxi 0.05 RF INSERTION LOSS 7-16 8ERIE8 -55/+155 •c TEMPERATURE RATING VF(GHz) dB Maxi

Contextual Info: TECHNICAL R185.237.000 Page DATA STRAIGHT JACK CRIMP TYPE CABLE 11/50 D 1 /2 7-16 SERIES 24 / 2 plats 50 NOMINAL IMPEDANCE 0-7.5 FREQUENCY RANGE TEMPERATURE RATING -55/+155 X + 1 O C \J V.S.W.R 0.05 RF INSERTION LOSS \[f CABLES : KX 13 a GHz RG 214 RG 225

Radiall r141

Contextual Info: TECHNICAL DATA Page R141.219.000 STRAIGHT JACK CLAMP TYPE GABLE 10+11/50 50 NOMINAL IMPEDANCE 0-4 FREQUENCY RANGE 8ERIE8 1.2 + KX RG RG RG RG GHz X F GHz Maxi 0.1 RF INSERTION LOSS Veff Maxi DIELECTRIC WITHSTANDING VOLTAGE 1500 Veff Mini INSULATION RESISTANCE

M39012

Abstract: 227-1221-25 MIL-C-39012 82-4460 RG 393 cable amphenol plugs 350503
Contextual Info: Amphenol SC Specifications ELECTRICAL 50 Ohm constant 0-11 GHz, 1500 V typ. 1000 volts peakd 3000 volts RMS Mating 11/16-24 UNEF screw threads. Plug coupling nut has safety wire holes. Cable Affixment Crimp-crimp: hex-crimp jacket, braid, center con tact per MIL-C-39012

ACAT-B189

Abstract: MIL-C-22750
Contextual Info: Advanced Control Components 20 MERIDIAN ROAD EATONTOWN, N.J. 07724 PHONE: 732 460-0212 FAX: (732)460-0214 W WW.ADVANCED-CONTROL.COM Inc. PRODUCT SPECIFICATION PART NUMBER: ACAT-B189 DESCRIPTION: ATTENUATOR, VOLTAGE VARIABLE, 60 dB REV. FREQUENCY RANGE: INSERTION LOSS:

Contextual Info: Amphenol C, HN, SC C, HN, SC Description Amphenol C connectors are medium size and weatherproof. Coupling is two-stud bayonet lock. C connectors provide constant 50 ohm impedance. They may be used with 75 ohm cable, at lower frequencies below 300 MHz where no serious mismatch is introduced.

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: AD8351S 80MHZ AD6645 AD8350 AD8351 AD8351ARM AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13
Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

AD8351S

Contextual Info: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB

AD8351S

Contextual Info: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB

AD8351ARM-R2

Abstract: AD8351S AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13 RM-10 AD6645 AD8350 AD8351 AD8351ARM
Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Contextual Info: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: Catalog 1307191 Revised 10-00 RF Coax Connectors O S P M iniature M odular Blind M ate C o n n ecto rs Features • Interface designed for multiple interconnects ■ For high performance microwave system requirements ■ Bulkhead or panel mount ■ For semi-rigid cable

Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB

Contextual Info: TECH N ICAL DATA Page R161.222.000 STRAIGHT JACK CLAMP TYPE CABLE 10+11/50+75 S+D 50 NOMINAL IMPEDANCE 0-11 FREQUENCY RANGE -55/+155 TEMPERATURE RATING V.S.W.R 1 .30 + n GHz *c 1400 Veff Maxi DIELECTRIC WITHSTANDING VOLTAGE 2500 Veff Mini 5000 INSULATION RESISTANCE

R161-020

Abstract: r161.020.000 Radiall R161-020-000 R161 050 R161020000
Contextual Info: TECH N ICAL DATA Page R161.020.000 STRAIGHT PLUG CLAMP TYPE CABLE 10+11/50+75 S+D N 8ERIE 8 0.685/2flats □IA 0.827— «21 1 I 2 0.630/2flats (16/2plats) DIA 0.441 ( 011.2 ) (38.1) 50 NOMINAL IMPEDANCE 0-11 FREQUENCY RANGE -55/+155 TEMPERATURE RATING V.S.W.R

Contextual Info: TECHNICAL DATA Page R161.018.200 STRAIGHT PLUG CLAMP TYPE GABLE 10+11/50 SPL N 8 E R IE 8 0.685/2flats □IA 0.827— «21 1 I 2 0.630/2flats (16/2plats) DIA 0.441 ( 011 . 2 ) (38.1) 50 NOMINAL IMPEDANCE 0-11 FREQUENCY RANGE n CABLES :KX 4 KX RG RG RG RG

Contextual Info: TECHNICAL DATA SHEET 1/3 R161.332.020 STRAIGHT BULKHEAD JACK CLAMP TYPE Series : N PANEL SEAL CABLE 10+11/50+75 S+D All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - MATERIALS BRASS BERYLLIUM COPPER

r141018

Abstract: Radiall R141.018.000 R143.018.000
Contextual Info: 1/2 TECHNICAL DATA SHEET – COAXIAL CONNECTORS R141.018.000 STRAIGHT PLUG CLAMP TYPE Series : BNC CABLE 10+11/50 All dimensions are in mm. COMPONENTS BODY CENTRE CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - MATERIALS BRASS BRASS PTFE SILICONE RUBBER

Radiall R161-018-000

Abstract: r161018000 R161-018-000
Contextual Info: TECH N ICAL DATA Page R161.018.000 STRAIGHT PLUG CLAMP TYPE GABLE 10+11/50+75 50 NOMINAL IMPEDANCE 0-11 FREQUENCY RANGE -55/+155 TEMPERATURE RATING V.S.W.R 1 .30 + CABLES :KX 4 n KX RG RG RG RG RG RG RG RG GHz *c x F GHz Maxi 1400 Veff Maxi DIELECTRIC WITHSTANDING VOLTAGE 2500

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a

R161.220.000

Abstract: R161220000 9744P00
Contextual Info: TECHNICAL DATA Page R161.220.000 STRAIGHT JACK CLAMP TYPE CABLE 10+11/50+75 S+D 0.685/2flats 17.4 /2p 1at s ' 1 I 2 N 8 E R IE 8 0_1630/2f lats 16/2plats) □IA 0.748- □IA 0.441 ( 01 1 . 2 ) (39. 32) 50 NOMINAL IMPEDANCE 0-11 FREQUENCY RANGE i.30 + X 0.048

g30n60b3

Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Contextual Info: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar