RFC BB 204 Search Results

Contextual Info: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz

Contextual Info: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz

Contextual Info: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz

Contextual Info: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz

Contextual Info: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz

BB502C

Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Contextual Info: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

Contextual Info: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

Contextual Info: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

Contextual Info: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

Contextual Info: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

RJ45 to usb convert

Abstract: RGMII EN125 USB to ethernet bridge 27.12MHz AX88178 pulse of 4017 ax88178lf cmos 4008 Gigabit Ethernet PHY
Contextual Info: AX88178 L USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-02/4/20/2004 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant

RJ45 to usb convert

Abstract: 7412 voltage regulator ASIX ELECTRONICS CORPORATION mac air i5 specs magnetic less ethernet RGMII usb rj45 converter AX88178 Gigabit Ethernet PHY EN125
Contextual Info: AX88178 USB to 10/100/1000 Gigabit Ethernet/HomePNA Controller Document No: AX88178-07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100/1000 Gigabit Ethernet and HomePNA and HomePlug Network Controller USB specification 1.0 and 1.1 and 2.0 compliant

BB506M

Contextual Info: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)

27.12Mhz

Abstract: RJ45 to usb convert PIN DIAGRAM OF RJ45 to usb AX88772L Crystal 27.12MHz 10/100 BASE TRANSFORMERS LAN COMPONENTS ASIX ELECTRONICS CORPORATION mac air i5 specs AX88772 USB to ethernet bridge
Contextual Info: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_07/6/21/05 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY

TSE 151

Abstract: BB502C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features •    Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz

RENESAS marking code package sot 89

Contextual Info: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features •    Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz

Contextual Info: Preliminary Datasheet BB506M R07DS0289EJ0200 Previous: REJ03G1604-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)

BB506CFS

Contextual Info: Preliminary Datasheet BB506C R07DS0288EJ0200 Previous: REJ03G1246-0100 Rev.2.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)

AX88772

Abstract: EN125 0X0904
Contextual Info: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_10/9/15/06 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY

SBK160808T-110Y-S

Abstract: AX88772 810-A0 rj45-10 USB to ethernet bridge v11424
Contextual Info: AX88772 USB to 10/100 Fast Ethernet/HomePNA Controller Document No: AX88772_11/4/24/07 Features • • • • • • • • • • Single chip USB to 10/100 Fast Ethernet and HomePNA and HomePlug Network Controller Integrates on-chip 10/100Mbps Fast Ethernet PHY

BB506M

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid