RF TRANSISTOR S-PARAMETER 30W Search Results

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

M57774

Abstract: transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final
Contextual Info: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm — II— IHD PIN : Pin : RF INPUT ©VCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °Q unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE M57710-A 156-160MHz, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66 ± 1 60 ± 1 51.5 ± 0 .5 <D Ja 7 / R1.5 2 R2 ± 0.3 do + i in csi I — IH- — II— <3> CM To öo +- I in ¡t> 0.45 ± 0.15

transistor B 764

Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

M57729

Abstract: 4 pin 433 mhz rf module
Contextual Info: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : P in : RF INPUT ©VCC1 : 1st. DC SUPPLY VCC2 : 2nd. DC SUPPLY ©VCC3 : 3rd. DC SUPPLY ©Po : RF OUTPUT © G N D : FIN A B S O LU TE MAXIMUM RATINGS Tc = 2 5 <

equivalent transistor c 243

Abstract: VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet
Contextual Info: A jfc C D V i m an A M P com pany RF MOSFET Power Transistor, 30W, 40V 500 -1000 MHz LF4030C V2.00 Features • • • • • • N-Channel Enhancement Mode Device Gold Metallized Resfet Structure Lower Capacitances for Broadband Operation Common Source Configuration

MAGX-000035

Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

transistor P239

Abstract: 865 RF transistor MAPLST0810-030CF p239
Contextual Info: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V 5/14/04 MAPLST0810-030CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:

Contextual Info: RF Power Field Effect Transistor LDMOS, 920 — 965 MHz, 30W, 26V 2/18/2003 MAPLST0810-030WF Preliminary Features Q Q Q Q Q Q Package Style Designed for 925 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz,

F10G

Abstract: LF4030C
Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 30W, 40V 500 -1000 MHz LF4030C V2.00 Features • • • • • • N-Channel Enhancement Mode Device Gold Metallized Resfet Structure Lower Capacitances for Broadband Operation Common Source Configuration

ATC100B

Abstract: TRANSISTOR Z4 MAPLST1617-030CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W

ATC100B

Abstract: transistor amplifier a05t GM-1 A05T MAPLST2122-030CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 MAPLST2122-030CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.

Contextual Info: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 2/18/03 MAPLST2122-030WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.

ATC100B

Abstract: dqpsk A05T MAPLST1900-030CF ER254
Contextual Info: RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 MAPLST1900-030CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -68 dBc ACPR 600kHz :

Contextual Info: RF Power Field Effect Transistor LDMOS, 1900 — 2000 MHz, 30W, 26V 2/18/03 MAPLST1920-030WF Preliminary Package Style Features Designed for GSM and EDGE base station applications in the 1.9 to 2.0 GHz Frequency Band. Suitable for FM, TDMA, CDMA, and multi-carrier amplifier applications. Specified

1800 ldmos

Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
Contextual Info: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier

MAPRST1214-30UF

Contextual Info: MAPRST1214-30UF Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general

400M

Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

46dBm

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

ST 9241

Contextual Info: M m antA ccompany o ti AMP Radar Pulsed Power Transistor, 30W, 1ns Pulse, 10% Duty 3.1-3.4 GHz PH3134-30S V2.00 Features • • • • • • • • CrV ÜC> NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadban d C lass C O p eratio n

PH1516-30

Abstract: b 595 transistor PH1516
Contextual Info: a n A M P com pany Wireless Bipolar Power Transistor, 30W 1.45-1.60 GHz PH1516-30 V2.00 Features • • • • • D esigned for C ellu lar Base S tation A pplications -30 dBc Typical 3rd 1MD at 30 W atts PEP C o m m o n E m itter Class AB O p e ra tio n