RF TRANSISTOR MPS Search Results

MPS6547

Abstract: 933 TRANSISTOR
Contextual Info: MPS6547 silicon NPN SILICON RF A M PLIFIER TRANSISTOR NPN SILICON ANNULAR RF A M PLIFIER TRANSISTOR . . . designed for use in RF am plifier applications. • Collector-Em itter Breakdown Voltage — • High-Current-Gain—Bandwidth Product — f f = 100 0 M H z (T yp ) @ I q ~ 2 .0 mAdc

MPS8001

Abstract: MPS-U31 MPSU31 MPS8000 MPS-8000
Contextual Info: MPS8001 SILICON NPN SILICON RF ANNULAR TRANSISTOR RF OSCILLATOR TRANSISTOR NPN SILICON . . . designed for use in Citizen-Band comm unications equipment operating to 30 MHz, with low feedback capacity for stable opera­ tion. This part is designed to be used w ith the M P S 8 0 0 0 driver and

MPS-U31

Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
Contextual Info: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com­ munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number

Contextual Info: SEMICONDUCTOR MPS6543 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 100 |^A to 10 m A range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum RâtinÇjS

MPS 4355 transistor

Abstract: MM8009 mps 0737
Contextual Info: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica­ tions in m ilitary and industrial equipment. Suitable for use as output,

mpsh10

Abstract: MPS-H10 MPSH10G transistor l2
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number Normal

Contextual Info: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C

CBVK741B019

Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MPSH81

Abstract: MMBTH81 transistor mark 3d
Contextual Info: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

transistor 6D

Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Contextual Info: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA

SILICON TRANSISTOR CORP

Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor
Contextual Info: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS

transistor r 53

Abstract: MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die
Contextual Info: PROCESS CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization

MPS3866

Abstract: MRF3866R2
Contextual Info: MOTOROLA Order this document by MPS3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MPS3866 MRF3866R2 • Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY

distress beacon

Abstract: dn-101 transistor ztx zetex transistors TO92 285T distress ZTX688B DIAC application MPSH10 S parameters
Contextual Info: Design Note 9 Issue 2 June 1995 Automotive Security Systems and RF Transistor Products Design Note 10 Issue 2 June 1995 3V Distress Beacon + 12V Antenna 680 1M + 3V Encoder I.C. 15T The majority of modem automotive alarms employ coded RF systems that key a VHF carrier wave with a unique or

318MHZ

Abstract: MPSH10 MPSH10P CTO-92
Contextual Info: NPN SILICON PLANAR RF TRANSISTOR MPSH10 ISSUE 3 – NOVEMBER 94 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz B E C TO92 REFER TO MPSH10P FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage

MPSH81

Contextual Info: MOTOROLA Order this document by MPSH81/D SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor MPSH81 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit v CEO -2 0 Vdc Collector-Base Voltage v CBO -2 0 Vdc

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

MPS3866

Abstract: MRF3866R2
Contextual Info: MOTOROLA Order this document by MRF3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF3866R2 • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY TRANSISTORS