RF TRANSISTOR MPS Search Results

RF POWER TRANSISTOR 100MHz

Abstract: transistor marking RF transistor case To 92
Contextual Info: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

MPS6547

Abstract: 933 TRANSISTOR
Contextual Info: MPS6547 silicon NPN SILICON RF A M PLIFIER TRANSISTOR NPN SILICON ANNULAR RF A M PLIFIER TRANSISTOR . . . designed for use in RF am plifier applications. • Collector-Em itter Breakdown Voltage — • High-Current-Gain—Bandwidth Product — f f = 100 0 M H z (T yp ) @ I q ~ 2 .0 mAdc

mrf226

Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
Contextual Info: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited

MPS8001

Abstract: MPS-U31 MPSU31 MPS8000 MPS-8000
Contextual Info: MPS8001 SILICON NPN SILICON RF ANNULAR TRANSISTOR RF OSCILLATOR TRANSISTOR NPN SILICON . . . designed for use in Citizen-Band comm unications equipment operating to 30 MHz, with low feedback capacity for stable opera­ tion. This part is designed to be used w ith the M P S 8 0 0 0 driver and

MPS-U31

Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
Contextual Info: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com­ munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

MMBR536

Contextual Info: 1EE § b3h72 SM MOTOROLA MOTOROLA SC QQ&75&S XSTRS/R □ I r-u-i r ' F SEM ICONDUCTOR TECHNICAL DATA MPS536 MMBR536 The RF Line PIMP Silico n High Frequency Transistor L O W N O IS E HIGH R F G A IN . this high current gain-bandwidth transistor makes an excellent RF amplifier and

MPS6543

Abstract: MPSH11
Contextual Info: SEMICONDUCTOR tm MPS6543 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 nA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Màximum RStiriQS

Contextual Info: SEMICONDUCTOR tm MPS6543 . ;^C* C< \ e TO-92 ; NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 pA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics.

MPS6543

Abstract: MPSH11
Contextual Info: MPS6543 C TO-92 EB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 µA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number

Contextual Info: SEMICONDUCTOR MPS6543 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 100 |^A to 10 m A range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum RâtinÇjS

Contextual Info: SEMICONDUCTOR tm MPSH81 MMBTH81 Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum RatinQS TA = 250C unless otherwise noted

mpsh10

Abstract: MPS-H10 MPSH10G transistor l2
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number Normal

MPSH10 datasheet

Abstract: UTC200 MPSH10 100MHZ
Contextual Info: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

Contextual Info: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C

MPSH10 datasheet

Abstract: 100MHZ MPSH10
Contextual Info: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

transistor mark 3d

Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
Contextual Info: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

UTC200

Abstract: 100MHZ MPSH10 MPSH10A
Contextual Info: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C

CBVK741B019

Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

nk90

Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*