RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Search Results

MRF5003

Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

F5003

Abstract: 1N4734
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

136y

Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band

MRF5003

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5003 MRF5003R1 N-Channel Enhancement-Mode The MRF5003 is designed for broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

2865002402

Abstract: 6435 fet MRF136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.

MRF184

Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France

SKY65016-214LF

Abstract: FBMH4525HM162N-T SKY65016 SKY65016-70LF SKY65016-92LF skyworks micro-x package
Contextual Info: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 19 dB typ. @ 1000 MHz 0P1 dB: 14 dBm typ. @ 2 GHz Input and output impedance: 50 Ω nominal

MRF5007

Abstract: AN211A AN215A AN721 430B-01 motorola an721 application
Contextual Info: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 19 dB typ. @ 1000 MHz 0P1 dB: 14 dBm typ. @ 2 GHz Input and output impedance: 50 Ω nominal

Contextual Info: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: 30 dBm typ. 0P1 dB: 14 dBm typ. @ 2 GHz

Contextual Info: DATA SHEET SKY65016-214LF: InGaP General Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: +30 dBm typ. 0P1 dB: +14 dBm typ. @ 2 GHz

AM79C433

Abstract: MX1L
Contextual Info: K Jiä / U ^ U S e m i c o n d u c t o r s 900-MHz ISM Band Receiver Description The receiver IC U2762B-B is specifically designed for cordless telephone applications in the 900-MHz ISM band. It is manufactured using TEMIC’s advanced UHF process. The IC consists of a 900-MHz RF amplifier and

Nippon capacitors

Abstract: equivalent of transistor BFT 51
Contextual Info: MOTOROLA Order th is docum ent by MRF5007/D SEMICONDUCTOR TECHNICAL DATA f The RF MOSFET Line MRF5007 RF Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5007 is designed for broadband comm ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

MRF1507

Abstract: PJ 0459
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed fo r broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

transistor 7808

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

mrf5015

Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

08055C104KAT2A

Abstract: 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR
Contextual Info: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451 – DECEMBER 2004 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain – 210 MHz Gain Bandwidth Product

"RF power MOSFETs"

Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: HFA1130/883 H A R R IS X Semiconductor Output Clamping, 850 MHz Current Feedback Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA1130/883 is a high speed, wideband current feed­

Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 02APR04 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

j35 fet

Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device