RF POWER AMPLIFIER Search Results

ATC 100E

Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
Contextual Info: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

ARF461AG

Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

jack P4

Abstract: RF5152 RF5152PCBA-41X Gan hemt transistor x band laptop mini pci slot pin details 2.4Gh
Contextual Info: RF5152 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 3.6V „ „ „ „ NC VC2 NC 12 RF IN 2 34dB Typical Small Signal Gain Match RF IN 3 2400MHz to 2500MHz Frequency Range RF OUT/ VC3 11 RF OUT Match Match 50Ω Input and Interstage Matching

RF5111

Abstract: DCS1800 DCS1900 IPC-SM-782 PCS1900 RF5110 RF5111PCBA-41X BLOCK DIAGRAM OF RF BOARD
Contextual Info: RF5111 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and

Contextual Info: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for

16HHF1

Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

DBS-5044N530

Abstract: RF Switches DBS-7772N530 DBP-5044N637 DBP-6459N637 DBP-7772N637 DBP-8479N637 DBS-6459N530 DBS-8479N530
Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Standard Communication Band Amplifiers HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY RANGE

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 5.0V NC VCC1 NC 12 RF IN 2 Input Match 28dB Typical Small Signal Gain RF IN 3 10 RF OUT „ „ „ „ Power Detector Bias Circuit NC 4 9 NC 5 +23dBm, <4%EVM, 250mA at VCC =5.0V

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

Contextual Info: MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941 MHz, 3W FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm £ PIN: RF INPUT 0 P in d VGG GATE BIAS SUPPLY ©VDD DRAIN BIAS SUPPLY ©PO RF OUTPUT © G N D FIN H46 ABSOLUTE MAXIMUM RATINGS

p281

Abstract: P28-1 TRANSISTOR P281
Contextual Info: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2246

Contextual Info: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2248

Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2201

Contextual Info: polyfet rf devices F2201 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2021

Contextual Info: polyfet rf devices F2021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2003

Abstract: F20-03 idq04
Contextual Info: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2048

Contextual Info: polyfet rf devices F2048 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2213

Contextual Info: polyfet rf devices F2213 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2212

Contextual Info: polyfet rf devices F2212 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2047

Contextual Info: polyfet rf devices F2047 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2012

Contextual Info: polyfet rf devices F2012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2041

Contextual Info: polyfet rf devices F2041 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base