RF P-CHANNEL LOW CISS Search Results

3SK131

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • S uita ble for use as RF a m p lifie r in V H F T V tun er. • Low • High • Low NF : 1.3 dB T Y P .

2SK4271

Abstract: ikv hd 2SK427 1404B
Contextual Info: Ordering n u m b er:E N 1404B ._ 2SK427 NO.1404B N-Channel Junction Silicon FET AM Tuner RF Amp Applications A p p licatio n s • AM tuner RF amps and low-noise amps. F e a tu re s • Large I y f8 I . • Ultralow noise figure. • Small Crss.

P10568EJ2V0DS00

Abstract: NEC 939 u79 transistor u79 335 NEC 2134 transistor NEC m 2134 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL G a As DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: • • High G p s : 20 dB TYP. Low NF:

Contextual Info: Ordering number : EN 2841 _ 2 S K 9 3 2 No.2841 N-Channel Junction Silicon FET High-Frequency Low-Noise Amp Applications A p p lic atio n s • AM tuner RF amp, low-noise amp F e a tu re s • Adoption of FBET process •Large lyrsl • Small Ciss

n-channel enhancement mode vmos power fet

Abstract: DV1201K
Contextual Info: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .

3SK226

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK226 Unit in m m + 0.2 TV TUNER, VHF RF A MPLIFIER APPLICATIONS. 2.9 “ 0.3 FM TUNER APPLICATIONS. Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Low Noise Figure C r s s = 0 . 0 1 5 p F T Y P .

MESFET Application

Abstract: 52s marking MARKING 52S
Contextual Info: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF am plifier in UHF TV tuner. • Low Crss : 0 . 0 2 pF T Y P . • High G Ps : 18 dB TYP.

k3111

Contextual Info: 3SK153 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR U nit in mm TV TU N ER , UHF RF A M P LIFIER A PP LIC A TIO N S. TV TUNER VH F W ID E B A N D RF A M P LIF IE R A PP LIC A T IO N S . • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.025pF Typ.

3SK259

Contextual Info: 3SK259 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm TV TU N ER , UHF RF A M P LIFIER A PP LIC A T IO N S . TV TU N ER VH F W ID E B A N D RF A M P LIF IE R A PP LIC A TIO N S. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.025pF Typ.

Contextual Info: SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR 2SK882 U nit in mm FM TU N ER , VHF RF A M P LIF IE R A PP LIC A T IO N S . • • • • Low Reverse Transfer Capacitance Low Noise Figure High Power Gain Recommend Operation Voltage Crss—0.025pF Typ.

3SK195

Contextual Info: 3SK195 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm TV TU N ER , VHF RF A M P LIF IE R A PP LIC A T IO N S . FM TU N ER A P P LIC A TIO N S. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

3SK151

Abstract: TRANSISTOR BJs 50
Contextual Info: 3SK151 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm T V TU N E R V H F M IX E R A P P LIC A T IO N S . V H F RF A M P LIF IE R A P P LIC A T IO N S . 4 0 .2 2.9 - 0.3 • High Conversion Fain: GQg = 24.5dB Typ. • Low Noise Figure

Contextual Info: 3SK199 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm T V TU N E R , U HF RF A M P LIF IE R A PP LIC A T IO N S . • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = O.OlöpF Typ. • Low Noise Figure

2SK241

Contextual Info: SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR 2SK241 U nit in mm FM TU N ER , VH F A N D RF A M P LIF IE R A PP LIC A TIO N S. • • • • Low Reverse Transfer Capacitance Low Noise Figure High Power Gain Recommend Operation Voltage Crss = 0.035pF Typ.

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

3SK160

Contextual Info: 3SK160 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR U nit in mm T V TU N E R , V H F RF A M P LIF IE R A P P LIC A T IO N S . T V TU N ER V H F M IX E R A P P LIC A T IO N S . + 0.2 2.9 - Q3 • Superior Cross M odulation Performance. • Low Noise Figure : NF = 2.1dB Typ.

3SK207

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR 3SK207 U n it in m m T V TU N ER , UHF RF A M P LIF IE R A PP LIC A T IO N S . • Superior Cross M odulation Perform ance. • Low Reverse T ran sfer C apacitance : Crss = 0.015pF Typ. • Low Noise Figu re

3SK260

Abstract: NFC ferrite
Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR 3SK260 U n it in mm TV TU N E R VHF M IX E R A PP LIC A T IO N S . VH F RF A M P LIF IE R A PP LIC A T IO N S . 1 .2 5 -1 0 . I I* • High Conversion Gain : GQS = 24.5dB Typ. • Low Noise Figure

3SK127

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR 3SK127 U nit in mm TV TU N ER , UHF RF A M P LIF IE R A PP LIC A T IO N S . T V TU N E R , UHF M IX E R A PP LIC A T IO N S . • • • Superior Cross M odulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Max.!

3SK258

Abstract: TAGk
Contextual Info: 3SK258 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm TV TU N E R , VHF RF A M P U F IE R A PP LIC A TIO N S. FM TUN ER A PP LIC A T IO N S . • • • 1. 2 5 :1 1. 1 I* , 1 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF (Typ.

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide