RF MEMS SWITCH Search Results

Contextual Info: White Paper: RF MEMS Switch: What You Need to Know Structure and Usage of OMRON MEMS Switch 2SMES-01 MEMS RF Switch Type: 2SMES-01 White Paper: 2SMES-01 MEMS RF Switch 1 Outline In this application note, the basic operation principle and driving method for OMRON’s MEMS switch

RMSW101

Abstract: RMSW221
Contextual Info: Radant MEMS RF MEMS Switches and Products The Most Reliable MEMS Switches 2012-2013 RF Gn d RF Out Gat e RF 255 Hudson Road Stow, MA 01775 Tel: 978.562.3866 Fax: 978.562.6277 E-mail: sales@radantmems.com www.radantmems.com 1/4/2013 Gn d RF In Gat e 1 2 2 TABLE OF CONTENTS

rf mems switch

Abstract: automatic transfer switch circuit diagram MEMS SWITCH 2SMES-01-EVBA rf mems 2SMES-01 N5230 4350B structure MEMS IC
Contextual Info: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).

DKM812

Contextual Info: PRELIMINARY SPDT MEMS DKM812 SWITCH DESCRIPTION The DKM812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact chip-scale package.

DKM812-3

Abstract: Dow-Key Microwave TT-612 TT612-3 jedec package MO-220 16 pin tt612 jedec footprint MO-220 VNND-2
Contextual Info: PRELIMINARY SPDT MEMS DKM812-3 SWITCH DESCRIPTION The DKM 812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact hermetic chip-scale package.

IDT CMOS Oscillators

Abstract: 4EA10 4EA1250A0
Contextual Info: Integrated Device Technology MEMS Oscillators: 4E Series POWER MANAGEMENT | ANALOG & RF | INTERFACE & CONNECTIVITY | The Analog and Digital Company TIMING & SYNCHRONIZATION | MEMORY & LOGIC | DATA CONVERSION QUAD y Frequenc BENEFITS / FEATURES • Dual outputs

Contextual Info: 4H Series MEMS Oscillators Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company INTERFACE & CONNECTIVITY | TIMING & SYNCHRONIZATION | MEMORY & LOGIC | DATA CONVERSION 100 fs Phase J itter! Smallest package 3225

M1C06-CDK2

Abstract: rf mems switch RF SPDT
Contextual Info: M1C06-CDK2 4822 McGrath Street, Ventura, CA 93003 Tel: 805 650-0260 Fax: (805) 650-1734 Visit at www.dowkey.com SPDT, 1 Form C Magnetic Latching Gold Alloy Operation Actuator Contact Material DC-6GHz 100 Million Cycles SPDT Bi-Polar Latching RF MEMS Switch

rf mems switch

Abstract: MEMS package
Contextual Info: MEMS Oscillators: 4M Series Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company INTERFACE & CONNECTIVITY | | TIMING & SYNCHRONIZATION MEMORY & LOGIC | DATA CONVERSION 5032 Packa ges ! < 1 ps Phase Jitter! • Low Jitter

Contextual Info: 4M Series MEMS Oscillators Integrated Device Technology POWER MANAGEMENT | | ANALOG & RF The Analog and Digital Company | INTERFACE & CONNECTIVITY | TIMING & SYNCHRONIZATION MEMORY & LOGIC | DATA CONVERSION 5032 Packa ges ! < 1 ps Phase Jitter! • Low Jitter

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

R5775

Abstract: 2SMES-01 MEGTRON R-5775 N5230 rf mems switch using Power Handling megtron6 R5775
Contextual Info: Surface-mounted MEMS Switch 2SMES-01 Surface-mounted, ultracompact SPDT MEMS switch usable up to 10-GHz band typical . • Exceptional high-frequency characteristics in a broad spectrum up to 10 GHz (typical) At 8 GHz (50Ω): Isolation: 30 dB min., Insertion loss: 1 dB max.

rf mems switch spst

Contextual Info: PRELIMINARY SPDT MEMS SMT SWITCH DC - 6.0 GHz Based on MEMS technology, the 408 Series of electromechanical switches provides you with • miniature, • high speed, • low insertion loss, • high isolation, • long life, • surface mount microwave switches with DC to 6.0 GHz+ performance.

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

Contextual Info: RF5755 Proposed 3.3V, 2.4GHz 802.11b/g/n WLAN FRONT-END MODULE Features   C_RX N/C BT 13 LNA VDD 1 Integrated 2.5GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b

Contextual Info: www.BT2000.co.uk +44 0 118 9324600 INNOVATIVE ELECTRONIC SOLUTIONS Fukushima Futaba Electric Co Ltd Futaba, Futaba, based in Fukushima, Fukushima, Japan, was established in 1964 as a Metal Oxide Oxide Film Resistor manufacturer. They have now expanded into the production of ceramic substrates

Contextual Info: RF1255 ANTENNA SWITCH MODULE WITH DUAL ANTENNA PATHS Package Style: 26-pin, 2.8mm x 3.6mm x 1.0mm RF1255 GSM 850/900 TRx1 TRx2 TRx3 GSM 1800/1900 TRx4 Features       Excellent Insertion Loss and Isolation Performance Seven Linear Paths Offer

Contextual Info: RF1292 ANTENNA SWITCH MODULE WITH 6 LINEAR PATHS IDEAL FOR 3G AND LTE APPLICATIONS Package Style: 18 pin, 2.5mm x 3.2mm x 1.0mm RF1292 TRX1 / GSM Rx TRX2 / GSM Rx Features          TRX3 / GSM Rx Excellent Insertion Loss and Isolation Performance

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Abstract: varactor
Contextual Info: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,

RF3023

Contextual Info: RF3023 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features „ „ „ „ „ „ 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Mimimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V

rf3024

Contextual Info: RF3024 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features „ „ „ „ „ „ 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Minimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V

RF5500

Contextual Info: RF5500 RF550011b/g WLAN SP3T Switch 11B/G WLAN SP3T SWITCH Package: DFN, 8-Pin, 2.0 mm x 2.0 mm x 0.5 mm Features „ „ SP3T Switch Switch Control Voltage 2.1 to 5 V Typical 3.0 V Applications „ EEE802.11b/g WLAN Applications Functional Block Diagram Product Description

RF3025

Contextual Info: RF3025SPDT, Low Loss, High Isolation, Single Control, Absorptive Switch RF3025 Preliminary SPDT, LOW LOSS, HIGH ISOLATION, SINGLE CONTROL, ABSORPTIVE SWITCH Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The RF3025 is a high isolation single-pole double-throw SPDT absorptive

Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control