RF GAIN LTD Search Results

NEC JAPAN

Abstract: NESG3031M14 NESG3031M14-T3
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

NEC JAPAN

Abstract: NESG2021M16 NESG2021M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

M33 nec

Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

2012 NEC

Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

NESG2021M05

Abstract: NESG2021M05-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

transistor dc 558 npn

Abstract: 2SC5843
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

NEC semiconductor

Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

Contextual Info: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER

2SC5761

Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

NE661M05

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz

ultra low noise RF Transistor

Abstract: NEC JAPAN NESG204619 10T70
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

NE662M03

Abstract: k 2545 NE662M03-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and high-frequency oscillation NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

MHW1915

Contextual Info: MOTOROLA Order this document by MHW1915/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System

MHW1916

Contextual Info: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances

6 bit r2r ladder

Abstract: CLC5506 CLC5506IM CLC5506IMX CLC5506PCASM SOIC-14 LNA marking CODE AC AN1138
Contextual Info: CLC5506 Gain Trim Amplifier GTA General Description Features The CLC5506 is a low noise amplifier with programmable gain for use in cellular base stations, WLL, radar and RF/IF subsystems where gain control is required to increase the dynamic range. The CLC5506 allows designers to

NESG2031M05

Abstract: NESG2031M05-T1
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

NEC JAPAN

Abstract: NESG2031M16 NESG2031M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

Contextual Info: RF POWER AMPLIFIER • Broadband Frequency:20MHz～3700MHz ■ Output Power :5W typ. @Psat. ■ Gain Flatness :±2.0dB(max.) R&K-GA00237-2737-M SPECIFICATIONS ＠＋25℃ : 20MHz ～ 3700MHz : ＋27.0dB (typ.) : ＋25.0dB (min.) : ±2.0dB (max.) Gain Flatness

of ic UM 66

Contextual Info: Features * * * * Operating Supply Range 3.0V to 3.6V Power Dissipation 600mW Max Low-power Sleep Mode <0.5mW RF Data Channel - Programmable Gain Mode or Automatic Gain Control - W ide Bandwidth VGA - VGA Accepts Inputs from 30 - 300mV Peak-to-Peak Differential (PPD),

Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices