RF DRIVER AMPLIFIER Search Results

erie ceramic

Abstract: mrf4427 MOTOROLA IS21I2 j1222 MRF442 transistor C 2615
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF4427 The RF Line NPN Silicon RF Low Power Transistor . . . designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.

QAM64

Abstract: 6039 marking
Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant

RF3865

Abstract: RF3865PCK-410 RF3866 RF3865PCK-411 QFN20 RF3861 RF3863
Contextual Info: RF3865 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features „ „ „ WiMAX LNA or Linear Driver GSM 900, CDMA, PCS, UMTS LNA WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC NC 1 15 NC NC 2 14 NC 13 RF OUT RF IN 3 NC 4 12 NC AC GND1 5

LK421

Contextual Info: polyfet rf devices LK421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

L8711P

Contextual Info: polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2601 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SK722

Abstract: VDMOS
Contextual Info: polyfet rf devices SK722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

GRM39COG

Abstract: FR10K TCM4400 TRF1020 TRF3520 SSB Modulator application note K3332 GRMx7r grm39cog capacitor
Contextual Info: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLWS060A – MAY 1998 D D D D Modulation and Upconversion from I/Q Baseband to RF on Single Chip Designed for GSM Portable Cellular Telephones Internal VCO and SSB Mixer for Transmit Carrier Generation Internal RF Filter for Minimal External Parts

p124 8v

Abstract: P124
Contextual Info: polyfet rf devices P124 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TRANSISTOR S1A

Abstract: TRANSISTOR 1300 SH703
Contextual Info: polyfet rf devices SH703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SC721

Contextual Info: polyfet rf devices SC721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LDMOS push pull

Abstract: LK721 700 v power transistor
Contextual Info: polyfet rf devices LK721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

oc-192 modulator

Abstract: RAYTHEON DC-20 RMDA00100 oc 192 modulator
Contextual Info: RMDA00100 OC-192 Modulator Driver MMIC ADVANCED INFORMATION Description The Raytheon RF Components RMDA00100 is a medium power broadband amplifier MMIC suitable as a driver for external optical modulators for OC-192 fiber optic systems. It is available in

Contextual Info: polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SA742

Abstract: ldmos
Contextual Info: polyfet rf devices SA742 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

DA2900

Abstract: RAYTHEON Power Amplifier MMIC 2.6 GHz DA29000
Contextual Info: # 425430398 RMDA29000 27-31 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.

MRF321

Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

j687

Abstract: MRF323 VK200 case 244-04
Contextual Info: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

Transistor J550

Abstract: MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426
Contextual Info: MOTOROLA Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —