RF DCS POWER AMPLIFIER MODULE Search Results

Contextual Info: RF2174 RF21743V DCS Power Amplifier 3V DCS POWER AMPLIFIER NOT FOR NEW DESIGNS  Applications   NO T   VCC2 VCC2 2F0 13 11 RF OUT GND1 4 10 RF OUT 5 6 7 8 9 GND RF IN 3 VCC 12 RF OUT APC2 AT_EN 2 Functional Block Diagram Product Description NE

Contextual Info: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features  Linear EDGE and GSM Operation  High Gain for use in Systems with Low RF Driver Power 

RF2174

Abstract: 0402 resistor ipc-SM-782 DCS1800 DCS1900 IPC-SM-782 PCS1900 RF2173
Contextual Info: RF2174 RF21743V DCS Power Amplifier 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 VCC2 VCC2 2F0 AT_EN 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT 5 6 7 8 9 Functional Block Diagram Applications „ 13 GND „ 14 VCC „ 15 APC2 „ Single 2.7V to 4.8V Supply

Contextual Info: RF2174 RF21743V DCS Power Amplifier 3V DCS POWER AMPLIFIER        VCC2 VCC2 VCC2 2F0 AT_EN 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT 5 6 7 8 9 Functional Block Diagram Applications  13 GND  14 VCC  15 APC2  Single 2.7V to 4.8V Supply

Contextual Info: RF2174 RF21743 V DCS Power Amplifier 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 VCC2 VCC2 2F0 AT_EN 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT 5 6 7 8 9 Functional Block Diagram Applications „ 13 GND „ 14 VCC „ 15 APC2 „ Single 2.7V to 4.8V Supply

RF3189

Abstract: EGSM900 300khz filter EGSM900DCS
Contextual Info: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features         High Gain for use in Systems with Low RF Driver Power Typical GMSK Efficiency

NCS5002

Contextual Info: NCS5002 Product Preview RF Power Detector NCS5002 is a full CMOS detector designed for GSM/DCS/ GPRS/EDGE Power Amplifier Control, and RF measurement applications. This device converts the RF power applied into a DC level. The polynomial detector characteristics provide good accuracy at

gsm signal amplifier circuit diagram

Abstract: IC internal structure rf detector diodes
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

rf detector diode

Abstract: cfdb DIODE RF DETECTOR LMV248 LMV248LQ LMV248LQX RF Directional Couplers
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

Contextual Info: AWT6167 GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm

Contextual Info: AWT6166 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm

Contextual Info: AWT6166 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm

Contextual Info: AWT6166 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm

RF5110

Contextual Info: RF5111 DRAFT DRAFT 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and

Contextual Info: RF5111 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and

VHHC

Abstract: "RF Power Amplifier" MAAPSS0004 MAAPSS0005 MAX1785
Contextual Info: MAAPSS0005 Preliminary 3V DCS/GPRS RF Power Amplifier 1710 - 1785 MHz Functional Block Diagram Features • • • • • High gain, 3-stage amplifier 50 ohm input and output Low external part count 3 Volt supply Miniature FQFP-N 5-mm plastic package Vcc1

Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

DCS-1800

Abstract: GSM-900 MC33170 MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MTSF3N02HD dcs response time DCS 1800 to GSM converter
Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

MC33170

Abstract: MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MRFIC1859 MTSF3N02HD dcs response time RF 900MHz TO 1800MHz
Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

Contextual Info: Back MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

Contextual Info: RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 18 HB RFOUT BAND SEL 2 Features ̈ ̈ ̈ ̈ ̈ ̈ ̈ ̈ High Gain for use in Systems with Low RF Driver Power

RF3159

Abstract: EGSM900 RF3159PCBA-41X EGSM900DCS
Contextual Info: RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 18 HB RFOUT BAND SEL 2 Features „ „ „ „ „ „ „ „ High Gain for use in Systems with Low RF Driver Power

50w LF amplifier

Contextual Info: Application Note GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control Rev 0 RELEVANT PRODUCTS • AWT6146 GENERAL DESCRIPTION INTRODUCTION The application circuit below shows the relative ease with which this amplifier can be designed into a GSM