RF 4*4 MM QFN POWER AMPLIFIER Search Results

Contextual Info: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V2 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing

Contextual Info: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V4 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

XP1005

Abstract: XU1006-QB XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1
Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB October 2006 - Rev 19-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain

Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB August 2007 - Rev 19-Aug-07 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain

Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB June 2007 - Rev 15-Jun-07 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain

38TX0768-QB

Abstract: 38TX0768-QB-0L00 38TX0768-QB-0L0T 38TX0768-QB-EV1 XP1005
Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB October 2006 - Rev 05-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level

Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB June 2006 - Rev 15-Jun-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 3.0 dB Conversion Gain

class B push pull power amplifier

Abstract: TAT7469SC8 C315O 76-QFN rf 4 mm QFN LQH31HNR50K TAT7469 TAT7469-SC8 7469 1008AF-901XKL
Contextual Info: 75 Ohm RF Amplifier 50-1300 MHz TAT7469 Advanced Product Information Overview The TAT7469 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7469 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to

Contextual Info: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB August 2006 - Rev 25-Aug-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level

26 sot-363 rf power amplifier

Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Contextual Info: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package

TC1-33-75G2

Abstract: class B push pull power amplifier 76-QFN balun 75 ohm CRCW04020R0FKED 0402AF-561XJLW 1008AF-901XKLC TAT7468 0402CS-4N7XJLW Figure87
Contextual Info: 75 Ohm RF Amplifier 50-1000 MHz TAT 7468B Preliminary Data Sheet Overview The TAT7468B is a 75 Ohm RF Amplifier designed for use to 1 GHz. The TAT7468B contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to

Contextual Info: MMA-343737-Q10 3.4 – 3.7 GHz 4W Linear Power Amplifier Module Advance Data Sheet June 2007 Features: • • • • • • • • • • Frequency Range: 3.4 to 3.7 GHz 13.0 dB Gain 36.5 dBm P1dB 48 dBm IP3 29.5 dBm Pout @ 2% EVM Power Detector Power Control

Schematics 5250

Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz

ML200M

Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Contextual Info: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •

"channel estimation"

Contextual Info: MMA-343737-Q10 3.4 – 3.7 GHz 4W Linear Power Amplifier Module Advance Data Sheet June 2007 Features: • • • • • • • • • • 13.0 dB Gain 36.5 dBm P1dB 48 dBm IP3 29.5 dBm Pout @ 2% EVM Power Detector Power Control Single Positive Power Supply

12065A104JAT2A

Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

LPCC-32 9 x 9 mm

Abstract: TRF1222 TRF1222IRTMR TRF1222IRTMRG3 TRF1222IRTMT TRF1222IRTMTG3 irf 3405
Contextual Info: TR F1 TRF1222 222 www.ti.com SLWS171A – APRIL 2005 – REVISED DECEMBER 2005 3.5-GHz Integrated Up-Converter FEATURES KEY SPECIFICATIONS • • • • • • • • • • Performs Up-Conversion in 3.5-GHz Radios 3300-3800 MHz Integrated IF amplifier, Mixer and LO Buffer

QFN-8 RF

Abstract: ABA3130
Contextual Info: ABA3130 Low Noise Amplifier with Gain Control ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • 75 Ω Single-Ended Input • 75 Ω Differential Output • 37 dB of Gain Control Range • Wideband Operation: to Above 1.1 GHz • 4.5 dB Typical Noise Figure at 5 dB Gain

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

P1031-QK

Abstract: XB1014-QT XP1031-QK XP1031-QK-EV1 XU1006-QB pin diodes 10 GHz
Contextual Info: 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK August 2009 - Rev 26-Aug-09 Features Linear Power Amplifier Output Power Adjust 25.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.5 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-40.0 GHz SMD

TRF1122

Abstract: TRF1122IRTMR TRF1122IRTMRG3 TRF1122IRTMT TRF1122IRTMTG3
Contextual Info: TRF1122 www.ti.com SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006 2.5-GHz Integrated Up-Converter FEATURES • • • • • • • • • Performs Up-Conversion in 2.5-GHz Radios MDS/MMDS/WCS Integrated IF Amplifier, Mixer and LO Buffer Amplifier