REWORK 80 Search Results

sdc 603

Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Contextual Info: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems

UP78

Abstract: Aaa SMD MARKING
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

capacitive discharge ignition

Contextual Info: BT151X-800C SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking

BT138-800G

Contextual Info: BT138-800G 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd

ltl17

Contextual Info: flTblTSS 0 0 7 7 0 0 2 0 TM4256FC1 1,048,576 BY 1B IT DYNAMIC RAM MODULE INS TR A SIC /MEMORY OCTOBER'19 9 5 —REVISED FEBRUARY 1988 BSE D 1 ,0 4 8 ,5 7 6 x 1 Organization TM 4266FC 1 . . C SINGLE-IN-LINE PACKAGE (TOP VIEW) Single 5-V Supply (10 % Tolerance)

C11040

Contextual Info: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

92FA

Abstract: 15FV
Contextual Info: 19-6266; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX15104 Small 2A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package General Description Features The MAX15104 is a small, low-dropout linear regulator optimized for networking, datacom, and server applications. The regulator delivers up to 2A from a 1.7V to 5.5V

1206-8 chipfet

Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: BT152X-400R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current

shockley diode application

Abstract: IP4294 DFN2510
Contextual Info: XS ON 10 IP4294CZ10-TBR ESD protection for ultra high-speed interfaces Rev. 3 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface HDMI , DisplayPort, external Serial Advanced

Contextual Info: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

771-BUK7215-55A118

Contextual Info: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

s8058

Contextual Info: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested