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    RETURN LOSS BRIDGE Search Results

    RETURN LOSS BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA/883B
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    SF-NDCCGJ28GB-003M
    Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-003M 3m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (9.8 ft) - 26 AWG (Low-Loss Version) PDF
    SF-NDCCGJ28GB-002M
    Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-002M 2m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (6.6 ft) - 26 AWG (Low-Loss Version) PDF
    TCK424G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    RETURN LOSS BRIDGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TGS2313

    Contextual Info: TGS2313 4 - 18 GHz VPIN SP3T Switch Key Features • 4-18 GHz High Isolation SP3T • 1.0 dB Typical Insertion Loss • 35 dB Nominal Isolation • 12 dB Typical Return Loss • On-Chip Bias Network • DC blocked at RF ports • Chip dimensions: 2.16 x 2.16 x 0.10 mm


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    TGS2313 TGS2313 0007-inch PDF

    3A001

    Abstract: Ka-band free circuit diagram of rf id
    Contextual Info: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output


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    TGA2575 TGA2575 32GHz 38GHz, 36dBm 3A001 Ka-band free circuit diagram of rf id PDF

    AMMC-5040

    Abstract: AMMC-5618 AMMC-5033 gold detector circuit free Ablebond 71
    Contextual Info: Agilent AMMC-5033 17.7 − 32 GHz Power Amplifier Data Sheet Features • Wide frequency range: 17.7 - 32 GHz • High Power: P-1dB @ 25 GHz = 27 dBm • High gain: 20 dB Chip Size: 2730 x 1300 µm 108 x 51.6 mils • Return loss: Input: -13 dB, Output: 20 dB


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    AMMC-5033 AMMC-5040 AMMC-5618 AMMC-5033 AMMC-5033-W10 AMMC-5033-W50 5989-3227EN 5989-3935EN AMMC-5040 AMMC-5618 gold detector circuit free Ablebond 71 PDF

    Contextual Info: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss


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    TGA4509-EPU 0007-inch PDF

    IR2130 APPLICATION NOTE

    Abstract: 3 phase dc control ir2130 3 phase inverter ir2130 IR2130 IR2130 APPLICATIONS Mosfet driver IR2130 ir2130 application application IR2130 IR2130 APPLICATION NOTE motor IR2130 APPLICATION NOTE full bridge
    Contextual Info: Design Tips DT 92-6A Current Sensing With the IR2130 Introduction The IR2130 high-voltage MOS gate driver IC provides a convenient and cost-effective gate drive solution for applications requiring a threephase bridge configuration. It consists of three high side and three low side referenced drive


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    IR2130 IR2130 IR2130 APPLICATION NOTE 3 phase dc control ir2130 3 phase inverter ir2130 IR2130 APPLICATIONS Mosfet driver IR2130 ir2130 application application IR2130 IR2130 APPLICATION NOTE motor IR2130 APPLICATION NOTE full bridge PDF

    3 phase inverter ir2130

    Abstract: IR2130 APPLICATION NOTE IR2130 APPLICATIONS IR2130 ir2130 application application IR2130 IR2130 APPLICATION NOTE motor Mosfet driver IR2130 IR2130 3 phase ir2130 advantages
    Contextual Info: DESIGN TIP DT 92-6 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA CURRENT SENSING WITH THE IR2130 Jamie Catt Introduction The IR2130 High voltage MOS gate Driver IC provides a convenient and cost effective gate drive solution for applications requiring a three phase bridge


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    IR2130 IR2130 /-50mV. 3 phase inverter ir2130 IR2130 APPLICATION NOTE IR2130 APPLICATIONS ir2130 application application IR2130 IR2130 APPLICATION NOTE motor Mosfet driver IR2130 IR2130 3 phase ir2130 advantages PDF

    Contextual Info: XR-T5897 Seven-Channel E1 Line Interface JTE X A R April 1998-1 FEATURES • Compliant with ITU G.703 Pulse Mask Template for 2.048Mbps E1 Rates • Seven Independent CEPT Transceivers • Supports Differential Transformer Coupled Receivers and Transmitters


    OCR Scan
    XR-T5897 048Mbps PDF

    Contextual Info: Preliminary Data Sheet PG2418T6X GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT Switch with 50 Ω Termination R09DS0024EJ0100 Rev.1.00 Jul 27, 2011 DESCRIPTION The μPG2418T6X is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch with 50 Ω termination for


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    PG2418T6X R09DS0024EJ0100 PG2418T6X PDF

    HMC648

    Abstract: HMC648 phase shifter
    Contextual Info: HMC648 v00.0607 PHASE SHIFTERS - CHIP 5 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 2.9 - 3.9 GHz Typical Applications Features The HMC648 is ideal for: Low RMS Phase Error: 1.5° • EW Receivers Low Insertion Loss: 4 dB • Weather & Military Radar High Linearity: +45 dBm


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    HMC648 HMC648 HMC648 phase shifter PDF

    6647a

    Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
    Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line


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    PDF

    j6 diode

    Abstract: J1 DIODE J3 diode MA4BN1840-1 J2 diode J4 diode
    Contextual Info: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state


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    PDF

    HMC643

    Contextual Info: HMC643 v01.0707 PHASE SHIFTERS - CHIP 5 GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 9 - 12 GHz Typical Applications Features The HMC643 is ideal for: Low RMS Phase Error: 3.5° • EW Receivers Low Insertion Loss: 6.5 dB • Weather & Military Radar High Linearity: +38 dBm


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    HMC643 HMC643 PDF

    ST11 Step motor driver

    Abstract: switec stepping motor driver st11 TE2221 switec stepper motors stepper 434 stepper ic rz2 d12 MS-X15 40486
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MC33977 Rev. 2.0, 1/2007 Single Gauge Driver 33977 The 33977 is a Serial Peripheral Interface SPI Controlled, stepper motor gauge driver Integrated Circuit (IC). This monolithic IC consists of a dual H-Bridge coil driver and its associated control logic. The HBridge drivers are used to automatically control the speed, direction,


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    MC33977 MS-X156 ST11 Step motor driver switec stepping motor driver st11 TE2221 switec stepper motors stepper 434 stepper ic rz2 d12 MS-X15 40486 PDF

    N9910X-846

    Abstract: FREQUENCY DOMAIN REFLECTOMETER N9912AU-236 hp network analyzer connectors N9923A car battery charger LTE ANTENNA GUIDE 1 to 3 GHz bandpass filter wide band 640X480 N9912AU-311
    Contextual Info: Agilent FieldFox RF Analyzer N9912A 4/6 GHz Technical Overview Boost your readiness in the field Boost Your Readiness FieldFox Every piece of gear in your kit had to prove its worth. Measuring up and earning a spot is the driving idea behind Agilent’s FieldFox RF


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    N9912A 5989-8618EN N9910X-846 FREQUENCY DOMAIN REFLECTOMETER N9912AU-236 hp network analyzer connectors N9923A car battery charger LTE ANTENNA GUIDE 1 to 3 GHz bandpass filter wide band 640X480 N9912AU-311 PDF

    TGA1342-EPU

    Contextual Info: Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm


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    TGA1342-EPU 378mm 032mm 0007-inch TGA1342-EPU PDF

    Contextual Info: Advance Product Information May 19, 2006 Wideband Low Noise Amplifier TGA4830 Key Features and Performance • • • • • • • • • • Measured Performance V+ = 5V, I+ = 50mA 10 14 5 Gain dB 12 S21 S11 S22 10 8 -5 -10 6 -15 4 -20 2 -25 -30 5


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    TGA4830 45GHz 20GHz 40Gbps TGA4830 PDF

    s-parameter s11 s12 s21

    Contextual Info: TQP369185 DC-6 GHz Gain Block Applications •     Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features          SOT-89 Package Functional Block Diagram GND Cascadable Gain Block


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    TQP369185 OT-89 TQP369185 s-parameter s11 s12 s21 PDF

    UCC3801 schematic

    Abstract: EPC-19 TRANSFORMER TDK PC44 sheet TDK Ferrite Core PC44 schematic diagram converter input 12v to 19v TDK PC44 tdk pc50 zener diode c18 5t how to calculate turn ratio for ferrite core transformer TDK TRANSFORMER CATALOG
    Contextual Info: Harris Semiconductor No. AN9605 Harris Intelligent Power April 1996 A 50W, 48V-to-5V DC-DC Converter Using the HIP2100 Author: Greg J. Miller Introduction HIP2100 Half-Bridge Driver The most popular DC-DC converter topologies are also the simplest - the flyback converter and the forward converter.


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    AN9605 HIP2100 HIP2100 UCC3801 schematic EPC-19 TRANSFORMER TDK PC44 sheet TDK Ferrite Core PC44 schematic diagram converter input 12v to 19v TDK PC44 tdk pc50 zener diode c18 5t how to calculate turn ratio for ferrite core transformer TDK TRANSFORMER CATALOG PDF

    HMC342

    Contextual Info: HMC342 v00.0301 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC342 is ideal for: Noise Figure : 3.5 dB • Microwave Point-to-Point Radios Gain: 20 dB • Millimeterwave Point-to-Point Radios


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    HMC342 HMC342 PDF

    HMC591

    Contextual Info: HMC591 v01.0107 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz Typical Applications Features The HMC591 is ideal for use as a power amplifier for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm


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    HMC591 HMC591 025mm PDF

    HMC592

    Contextual Info: HMC592 v01.0107 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Typical Applications Features The HMC592 is ideal for use as a power amplifier for: Saturated Output Power: +31 dBm @ 21% PAE • Point-to-Point Radios Output IP3: +38 dBm


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    HMC592 HMC592 025mm PDF

    HMC259

    Abstract: HMC263 HMC264 HMC265
    Contextual Info: HMC263 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 24 - 36 GHz V01.05.00 FEBRUARY 2001 General Description EXCELLENT NOISE FIGURE : 2.3 dB The HMC263 chip is a GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 24 to 36 GHz. The chip can easily be


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    HMC263 HMC263 HMC259 HMC264 HMC265 PDF

    XS1001

    Abstract: XS100 XS1001-BD XS10-0 0108
    Contextual Info: XS1001-BD 2.5-4.0 GHz GaAs MMIC 6-Bit Phase Shifter Rev 01-Sep-10 Features Chip Device Layout • 6-Bit Phase Shifter • LVCMOS/TTL Compatible Digital Control • LSB = 5.625º • 26 dBm Input P1dB Compression Point • 100% On-Wafer RF and DC Testing • 100% Visual Inspection to MIL-STD-883


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    XS1001-BD MIL-STD-883 01-Sep-10 XS1001 XS100 XS1001-BD XS10-0 0108 PDF

    HMC561

    Abstract: STM-64
    Contextual Info: HMC561 v00.0407 FREQUENCY MULTIPLIERS - CHIP 2 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT Typical Applications Features The HMC561 is suitable for: High Output Power: +17 dBm • Clock Generation Applications: SONET OC-192 & SDH STM-64 Low Input Power Drive: 0 to +6 dBm


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    HMC561 HMC561 OC-192 STM-64 025mm STM-64 PDF