RESISTOR WA7 Search Results

Mini-Systems

Abstract: palladium resistor MSR10
Contextual Info: PRECISION THICK FILM RESISTOR CHIPS Cpp TOP TERM INATIONS FOR SOLDER OR CONDUCTIVE EPOXY WRAP AROUND TERM INATIONS FOR SOLDER OR CONDUCTIVE EPOXY MINI-SYSTEMS SERIES WA56 WA47 WA4 WA13 W A62 WA53 WA5 WA64 WA9 WA7 WA57 WA24 WA43 WA49 WA50 WA17 WA32 WA30 WA28

Contextual Info: SAM2634 LOW-POWER SYNTHESIZER WITH EFFECTS The SAM2634 integrates into a single chip a proprietary DREAM DSP core 64-slots DSP + 16-bit microcontroller , a 32k x 16 RAM and an LCD display interface. With addition of a single external ROM or FLASH, a complete low cost sound module can be built, including reverb and

DREAM 4

Contextual Info: SAM2653 INTEGRATED DIGITAL MUSIC INSTRUMENT The SAM2653 integrates into a single chip a proprietary DREAM DSP core 64-slots DSP + 16-bit microcontroller , a 32k x 16 RAM, an LCD display interface and a scanner allowing direct connection to velocity sensitive keyboards, switches, LEDs, sliders. With

WA9 marking

Contextual Info: SAM2635 LOW-POWER SYNTHESIZER WITH EFFECTS AND BUILT-IN CODEC The SAM2635 integrates into a single chip a proprietary DREAM DSP core 64-slots DSP + 16-bit microcontroller , a 32k x 16 RAM, an LCD display interface and an Audio Codec. With addition of a single external ROM or FLASH, a complete low cost sound module can be built,

Contextual Info: SAM2655 INTEGRATED DIGITAL MUSIC INSTRUMENT WITH BUILT-IN CODEC The SAM2655 integrates into a single chip a proprietary DREAM DSP core 64-slots DSP + 16-bit microcontroller , a 32k x 16 RAM, an LCD display interface, an Audio Codec and a scanner allowing direct connection to velocity sensitive keyboards,

Contextual Info: TECHNICAL NOTE Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM

Contextual Info: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02-W ͶDescription BR34E02FVT-W is 256͙8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ͶFeatures ・256͙8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V

VSON008X2030

Abstract: 256X8 BR34E02 BR34E02FVT-W BR34E02-W
Contextual Info: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W,BR34E02NUX-W No.09002EBT03 ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

256X8

Abstract: BR34E02 BR34E02FVT-W BR34E02-W VSON008X2030 00H-7FH
Contextual Info: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W No.09002EAT03 ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

Contextual Info: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

DREAM 4

Abstract: SAM5916 DABD5 marking
Contextual Info: SAM5916 AUDIO & MUSIC MULTI-DSP PROCESSOR Key features                  Dream DSP Array of 16 new 24bit/56bit DSP cores P24XT supporting 56bit MAC operations (800M MAC/sec), vector processing, double precision instructions and

Contextual Info: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR1 For memory module SPD Memory BR34L02FV-W ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1. 256×8 bit architecture serial EEPROM 2. Wide operating voltage range: 1.7V-5.5V

BR34E02-W

Abstract: 256X8 BR34E02 BR34E02FVT-W VSON008X2030
Contextual Info: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM

Contextual Info: TECHNICAL NOTE Memory for Plug & Play DDR/DDR2 For memory module SPD Memory BR34E02FVT-W, BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM

USE OF SCL SDA LINE

Abstract: BR34L02 BR34L02FV-W
Contextual Info: TECHNICAL NOTE Plug & Play Memory series DDR/DDR2 For Memory Module SPD Memory BR34L02FV-W ●DESCRIPTION BR34L02FV-W is 256x8 bit Electrically Erasable PROM (based on Serial Presence Detect) ●FEATURES 256×8 bit architecture serial EEPROM Wide operating voltage range (1.7V～5.5V)

DC VCC RESET RESET WP SCL GND SDA

Contextual Info: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ͶDESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ͶFEATURES 256͙8 bit architecture serial EEPROM

BR34L02

Abstract: BR34L02FV-W BR34L02-W
Contextual Info: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ●DESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ●FEATURES 256x8 bit architecture serial EEPROM

UA79G

Abstract: SYPM SE5554 ua723 transistor substitution chart regulator 78G cs 550-is MA79G S659 uA78G
Contextual Info: Voltage Regulators INTRODUCTION The wide use of integrated circuits in sys­ tems has frequently led to the power supply and regulator portions taking a dispropor­ tionate share of the volume of the system. The introduction of flexible, high perform­ ance regulator ICs such as the 550 has made

ERO Electronic F-48

Abstract: mp 130i power transformer NEC a1601 ARC-231 diode CMS PJ 86 LV ARC-600 krc 118 056 ANTENNA WEIGHT e87j ROE EK L2 capacitors K1307
Contextual Info: AN 16 -30 ARC5-2 Handbook Maintenance Instructions AN/ARC-5 AIRCRAFT RADIO EQUIPMENT LF MF HF COMPONENTS THIS PUBLICATION SUPERSEDES AN 16-30ARC5-2 DATED 23 FEBRUARY 1944 REVISED 1 MAY 1953 WHICH SHOULD BE REMOVED FROM FILES AND DESTROYED. PUBLISHED UNDER AUTHORITY O F THE SECRETARY O F THE AIR FORCE

PDCR 900 pressure

Abstract: PDCR 800 pressure 451H JTMP91C016S TMP91C016 TMP91C016F panel and detecter block diagram CS2EB 91c016
Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91C016 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. Especially, take care below cautions.

Contextual Info: Double-cell Memory for Plug & Play DDR1/DDR2 For memory module SPD Memory BR34L02FV-W No.09002EAT04 ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

BR34L02FV-W

Contextual Info: Double-cell Memory for Plug & Play DDR1/DDR2 For memory module SPD Memory BR34L02FV-W No.09002EAT04 ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

Contextual Info: Memory for Plug & Play DDR/DDR2 For memory module SPD Memory No.09002EBT03 BR34E02FVT-W,BR34E02NUX-W ●Description BR34E02FVT-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1) 256×8 bit architecture serial EEPROM

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34L02-W ●General Description BR34L02-W is 256x8 bit Electrically Erasable PROM Based on Serial Presence Detect ●Features „ 256×8 bit architecture serial EEPROM „ Wide operating voltage range: 1.7V-5.5V