RESISTOR UJ MARKING Search Results

Contextual Info: [<OA LEADED RESISTOR RN26/RK26 RADIAL METAL FILM SPEER ELECTRONICS, INC. LLU-UJ - LEADED GENERAL PURPOSE Lead frame construction - High density assembly & excellent self-standing strength - Color dot marking for resistance value & tolerance - Blue color coating

Contextual Info: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W

SOT23 KJA

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type

hilton capacitors

Contextual Info: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information

Contextual Info: DTC115TE DTC115TUA DTC115TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC115TE (EMT3) 0.6 package marking: l 1.3 0.6 É h I E H 1 I — DTC115TE; 69

x9cmme

Abstract: ic x9cmme data marking A019 X9C103 control up/down 0-255 X9MME RR-520 X9C102 X9C104 X9C503
Contextual Info: 8 1932 Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS — Active Current, 3 mA Max — Standby Current, 500 iiA Max • 99 Resistive Elements

Contextual Info: Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 pA Max • 99 Resistive Elements —Temperature Compensated

transistors marking HJ

Contextual Info: DTA124EE DTA124EUA DTA124EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA124EE (EMT3) hJLS-^ , MAh I .6±0.2 package marking: DTA124EE, DTA124EUA, and DTA124EKA; 15

Contextual Info: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23

transistor D 716

Contextual Info: IMH15A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMH15A; H15 IMH15A (SMT6) 2 .9 ± 0 .2 1. 9 2 0 . 2 u .a r fo.95 0.95Ì • • • package contains two independent

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

transistor 5d

Abstract: TC-2177 IC S350 marking s350
Contextual Info: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci

NEC 2501

Abstract: TC-2178 resistor UJ marking
Contextual Info: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC

2sk433

Abstract: 2SK43-3 CC OWV W
Contextual Info: <FIELD-EFFECT TRANSISTOR 2SK433 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION OUTLINE DRAWING 2SK433 is a super mint outline resin sealed silicon N channel 2.S -0.3 junction type FET. It is designed for low frequency voltage amplify,application,

MARKING H07

Contextual Info: DTC363TK Digital transistor, NPN, with 1 resistor Features • available in SMT3 SMT, SC-59 package • package marking: DTC363TK; H07 Dimensions (Units : mm) • DTC363TK (SMT3) 1 0 * 0 .2 0.0 * 0 I 096 in addition to standard features of digital transistor, this transistor has:

marking code H.5 Sot 23-5

Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
Contextual Info: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature

application fuse cum power failure indicator

Abstract: melcher LM 1000 melcher LM 24Q2000
Contextual Info: Q-Family D C -D C Converters < 1 0 0 W Benign Environment Q-Family 100 W DC-DC Converters Input to output isolation Single output: Series 24Q.48Q1000 Double output: Series 24Q.48Q2000 i:^ryxh:ig:hxÖffi:C:i • Input to output electric strength test 2800 V DC

Contextual Info: • 17313b5 GD33T31 T7b ■ B U R R - BROW N OPA642 Wideband, Low Distortion, Low Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • ADC/DAC BUFFER AMPLIFIER • GAIN OF +1 BANDWIDTH: 400MHz • LOW DISTORTION IF AMPLIFIER

transistor a4z

Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z

NCB fuse

Contextual Info: Table of Contents and Selection Chart A L U M IN U M A N D T A N T A L U M E L E C T R O L Y T IC C A P A C IT O R S T H R O U G H H O LE S(»ries Application/Feature Anti-Solvent Capacitance Range (uF) Working Voltage Range (Vdc) Operating Temp. Range f C)

C2M0280120D

Contextual Info: VDS 1200 V ID @ 25˚C 10 A C2M0280120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 280 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive

eprom 27c512

Abstract: CMOS drum generator 27C512 CXP88800 drum Generator cmos 16-BIT SYNCHRONOUS COUNTER
Contextual Info: SONY CXP88800 CMOS 8-bit Single Chip Microcomputer Piggyback/ evaluator type Description The CXP88800 is a CMOS 8-bit single chip micro­ computer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP88616/88624, CXP88732/88740/88748

P521-1

Abstract: dlatgs P521 G p521 philips pyroelectric infrared sensor IEC134 pyroelectric tgs IEC 68-2-27 spectrometer pyroelectric amplifier circuit DLaTGS sensor
Contextual Info: P h ilip s C o m p o n e n t s rpyio 8 p/p52h _ J \ _ DEVELOPMENT DATA This data sh eet contains advance information and specifications w hich are subject to change w ithout notice. DEUTERATED LATGS PYROELECTRIC INFRARED SENSOR