RESISTOR MR4 Search Results

MRC 433

Abstract: metal film resistors Sfernice MR11 MR 08 RESISTOR
Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • RCMA 02 document no. 52009 metal film • RCMX 02 (document no. 52008) metal film RoHS • Temperature Range - 55 °C/+ 125 °C COMPLIANT • Tolerance and/or Temperature Coefficient

13001 model

Contextual Info: MR www.vishay.com Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 metal film RCMX 02 metal film Temperature range - 55 °C to + 125 °C Tolerance and/or temperature coefficient Tolerance tracking 0.1 % between two resistors

Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • RCMA 02 document no. 52009 metal film • RCMX 02 (document no. 52008) metal film RoHS • Temperature Range - 55 °C/+ 125 °C COMPLIANT • Tolerance and/or Temperature Coefficient

Contextual Info: MR www.vishay.com Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 metal film RCMX 02 metal film Temperature range - 55 °C to + 125 °C Tolerance and/or temperature coefficient Tolerance tracking 0.1 % between two resistors

Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 document no. 52009 metal film RCMX 02 (document no. 52008) metal film Temperature Range – 55°C/+ 125°C Tolerance and/or Temperature Coefficient Tolerance tracking 0.1% between two resistors

mr4 resistor

Abstract: Sfernice MR76S resistor RESISTOR NETWORKS MR 08 RESISTOR 52018 led MR11 vishay resistor MR11
Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 document no. 52009 metal film RCMX 02 (document no. 52008) metal film Temperature Range – 55°C/+ 125°C Tolerance and/or Temperature Coefficient Tolerance tracking 0.1% between two resistors

Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 metal film RCMX 02 metal film Temperature range - 55 °C/+ 125 °C Tolerance and/or temperature coefficient Tolerance tracking 0.1 % between two resistors TCR tracking 2 ppm/°C between two resistors

MR76S

Abstract: mr resistor MR11 MR44P MR 08 RESISTOR mr4 resistor MR42E
Contextual Info: MR Vishay Sfernice Resistor Networks Metal Film Technology FEATURES • • • • RCMA 02 metal film RCMX 02 metal film Temperature range - 55 °C/+ 125 °C Tolerance and/or temperature coefficient Tolerance tracking 0.1 % between two resistors TCR tracking 2 ppm/°C between two resistors

IT8512

Abstract: Sis 968 RTS5158 sis m672 G1410 SiSm672 sis 307elv sis307elv sis*307elv ME2N7002E
Contextual Info: 5 4 3 2 1 B test Modification P6. Prepare R502,C615 footprint and change R146 to 0603 for EMI request DACAVDD1 change source to VCC1.8 through a 3.3 ohm resistor R488 to solve CRT ripple issue D C P29. CON3 KB pin define follow PB2 Swap CP1,CP5,CP6,CP3,CP2,CP4 for layout smooth

MR44V064A

Abstract: PEDR44V064A-05
Contextual Info: PEDR44V064A-05 Issue Date: Oct. 17, 2011 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

taa900

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

MR4A08B

Abstract: BGA Solder Ball 0.35mm MR4A08BC MR4A08BM
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

MR4A08BMYS35

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

10BASE-FX

Abstract: AM79C874 design 78Q2120 dec 21143 am79c874 resistor mr6 TDK78Q2120
Contextual Info: Using the Am79C874 NetPHY -1LP Device to Replace the TDK 78Q2120 Application Note Using the Am79C874 NetPHY™-1LP Device to Replace the TDK 78Q2120 Application Note This application note provides a description of how to replace the TDK 78Q2120 with the AMD

MR4A16BC

Abstract: MR4A16BCMA35 tsop-ii tray 11.76 54-TSOP 54TSOP TSOP 54 tray MR4A16B MR4A MR4A16BM MR4A16BMYS3
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR4A16B

Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

BGA Package 0.35mm pitch

Abstract: 48BGA MR4A16B
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package