RESISTOR IN SIL Search Results

rt2n2

Contextual Info: RT2N26M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N26M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R2=10KΩ ①

RT2N23M

Contextual Info: RT2N23M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N23M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ ①

RT2P21M

Contextual Info: RT2P21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①

RT2N21M

Abstract: B05M
Contextual Info: RT2N21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①

RT2N20M

Contextual Info: RT2N20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①

RT2P20M

Contextual Info: RT2P20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①

Contextual Info: RT2P02M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2P02M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=4.7 KΩ

RT2N08M

Contextual Info: RT2N08M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N08M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=10KΩ

RT2P09M

Contextual Info: RT2P09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ

RT2N12M

Contextual Info: RT2N12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ

RT2N09M

Contextual Info: RT2N09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ

RT2P03M

Abstract: rt2p03
Contextual Info: RT2P03M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P03M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ

RT2N03M

Contextual Info: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ

RT2N03M

Abstract: rt2n03
Contextual Info: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ

R247k

Abstract: RT2P12M rt2p12
Contextual Info: RT2P12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ

RT2N05M

Contextual Info: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N05M is a compoｓｉｔｅ transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ

RT2N14M

Contextual Info: RT2N14M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N14M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10KΩ , R2=47KΩ

RT2N18M

Contextual Info: RT2N18M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N18M is a compoｓｉｔｅ transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=1.0 KΩ ●Mini package for easy mounting

RT2N07M

Contextual Info: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compoｓ ｉ ｔ ｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ

RT1N241

Abstract: RT2N04M
Contextual Info: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compoｓ ｉ ｔ ｅtransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ

RT2N07M

Contextual Info: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compoｓ ｉ ｔ ｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ

z35s

Abstract: RT2N05M
Contextual Info: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N05M is a compoｓｉｔｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ

RT1N241

Abstract: RT2N04M
Contextual Info: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compoｓ ｉ ｔ ｅtransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ

RT5N141C

Abstract: RT5N141
Contextual Info: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）