RESISTOR 850 M OHM Search Results

ECB-101537

Abstract: TRANSISTOR a43 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-4386 DC-3500 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

transistor 6bn

Abstract: MAC5-3
Contextual Info: Preliminary Product Description SGA-6586 Stanford Microdevices’ SGA-6586 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor

DB126

Contextual Info: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

SGA-6486-TR1

Contextual Info: Preliminary Product Description SGA-6486 Stanford Microdevices’ SGA-6486 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

Contextual Info: TL Series Heat Sinkable Thick Film Power Resistors A B 0.20" 5.10 mm C* 0.25" 6.3 mm Profile 1.01" 25.7 mm 0.98" 25 mm *For adjacent taps, C = 0.665" 16.9mm Ohm Range A (mm) Operating Dielectric B Voltage Withstanding (mm) VAC Voltage VAC 0.3 - 1 Meg 1.0 - 2 Meg

Contextual Info: SNA-300 Product Description Sirenza Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. At 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA . These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size

Contextual Info: Preliminary Product Description SGA-2386 Stanford Microdevices’ SGA-2386 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-4386 Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

MIL-R-26

Abstract: resistor 91k 105k
Contextual Info: 90 Series Lead Free Vitreous Enamel Molded Axial Lead Wirewound Resistors 5% Tolerance Standard 1.5 / 38.1 L Series Wattage* Ohms 91 1.5 0.1Ω-3.6K 0.1 -3.6K 92 2.25 0.1Ω-3.5K 93 3.25 0.1 0.1Ω-10.5K -10.5K 95 5.0 0.1Ω-25K 90 11.0 0.1Ω-91K 0.1 -91K

diode 47c

Abstract: CAB-34F CAB-14F ohmite 80 series ohmite 10 series
Contextual Info: Ohmite Cabinet Resistor Assortments are available from stock. They consist of sturdy plastic cabinets with compartmentalized drawers. Resistors are sorted by ohmic value. Each cabinet contains resistor types and values which are available from Ohmite stock.

marking A33

Abstract: TRANSISTOR MARKING A33
Contextual Info: Preliminary Product Description SGA-3363 Stanford Microdevices’ SGA-3363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

EDS-100

Contextual Info: Preliminary Product Description SGA-4386 Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

EDS-100

Abstract: 900 mhz oscillator
Contextual Info: Preliminary Product Description SGA-3386 Stanford Microdevices’ SGA-3386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

XA2 MMIC

Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

Contextual Info: Preliminary Product Description SGA-2486 Stanford Microdevices’ SGA-2486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-4186 Stanford Microdevices’ SGA-4186 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-2186 Stanford Microdevices’ SGA-2186 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

T100L

Abstract: 250M EW3G1004 EW2G 200EW
Contextual Info: Econo-Mox Series Ohmite’s High Voltage Resistor offering is now expanded to include this lower cost, commercial Econo-Mox product line Thick Film High Voltage Resistors Planar and Axial Lead Packages H L FEATURES • High Voltage Ratings • Stable characteristics under

Contextual Info: Meggitt Holsworthy herm etically sealed - m ultilayer wirewound Key features 1 ohm to 4 m egohm s * tolerances down to 0 .0 0 2 5 % * te r tracking down to 1ppm • tolerance m atching down to 0 .0 0 2 % • 3 year stability a t 0 .0 0 2 5 % • fu lly sealed case design •

MRF19085

Contextual Info: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Preliminary SGA-5263 Product Description The SGA-5263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

AM55-0016

Abstract: AM55-0016RTR AM55-0016SMB AM55-0016TR
Contextual Info: Switched Low Noise Amplifier, 800-1000 MHz AM55-0016 AM55-0016 Switched Low Noise Amplifier 800 - 1000 MHz Features • • • • • MSOP-8 High Gain State: - Gain: 16dB, Noise Figure: 1.6dB - Input IP3: +3dBm @2.7V, 25mA Low Gain State: - Insertion Loss: 5dB, Input IP3: +24dBm

AM55-0016

Abstract: AM55-0016SMB AM55-0016TR M513
Contextual Info: Switched Low Noise Amplifier 800 - 1000 MHz Features • • • • • AM55-0016 V3 Functional Block Diagram High Gain State: -Gain: 16 dB, Noise Figure: 1.6 dB -Input IP3: +3 dBm @2.7V, 25 mA Low Gain State: -Insertion Loss: 5 dB, Input IP3: +24 dBm Single Supply: +2.7 to +5 VDC

MRF19085

Contextual Info: Document Number: MRF19085 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier