RESISTOR 850 M OHM Search Results

SGA-5589

Abstract: OPERATION AMPLIFIER FOR 40 MHZ BUFFER 24.1 GHz amplifier transistor A55
Contextual Info: Preliminary Product Description SGA-5589 Stanford Microdevices’ SGA-5589 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

ECB-101537

Abstract: TRANSISTOR a43 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-4386 DC-3500 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Silicon Bipolar Amplifier A64

Abstract: CATV amplifier transistor SGA-6489 RF TRANSISTOR A64
Contextual Info: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

marking A45

Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Contextual Info: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

EDS-100620

Contextual Info: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

SGA-5263

Contextual Info: Preliminary Preliminary SGA-5263 Product Description Sirenza Microdevices’ SGA-5263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Z2400

Abstract: SGA-5263
Contextual Info: Preliminary Preliminary Product Description SGA-5263 Stanford Microdevices’ SGA-5263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

transistor c 5586

Abstract: transistor 5586 SGA-5586
Contextual Info: Preliminary Product Description SGA-5586 Stanford Microdevices’ SGA-5586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-5489

Contextual Info: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-5389 Z

Abstract: SGA-5389
Contextual Info: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.0V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-6425

Abstract: A64 sot23-5
Contextual Info: Preliminary Product Description SGA-6425 Stanford Microdevices’ SGA-6425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the

TRANSISTOR A52

Abstract: DC-5000 SGA-5289 sga5289 OPERATION AMPLIFIER FOR 40 MHZ BUFFER
Contextual Info: Preliminary Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-7489

Abstract: 7489 a74 sot-89 DC-3000 MCH185A101JK mrc18 ECB-100607
Contextual Info: Preliminary SGA-7489 Product Description Sirenza Microdevices’ SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters

SGA-7489

Abstract: TRANSISTOR 726 7489 DC-3000 MCH185A101JK a74 sot-89 EDS-101801 EDS 10180
Contextual Info: Preliminary Product Description Stanford Microdevices’ SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to 50 GHz.

SGA-5425

Abstract: DC-2400
Contextual Info: Preliminary Product Description SGA-5425 Stanford Microdevices’ SGA-5425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.3V, this RFIC uses the

TRANSISTOR MARKING A53

Abstract: marking A53 mmic SGA-5325 EDS-100967 amplifier gain 36 dB
Contextual Info: Preliminary Product Description SGA-5325 Stanford Microdevices’ SGA-5325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.5V, this RFIC uses the

SGA-6586

Contextual Info: Preliminary Product Description SGA-6586 Stanford Microdevices’ SGA-6586 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor

SGA-6486-TR1

Abstract: SGA-6486 SGA-6486-TR2 EDS-100615
Contextual Info: Preliminary Product Description SGA-6486 Stanford Microdevices’ SGA-6486 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

teraohm

Abstract: MOX200 MOX-400-23 mox-200 MOX-750
Contextual Info: FEATURES • • • • RoHS Compliant Precision Thick Film Axial Lead High Voltage/High Resistance Resistors B APPLICATIONS • • • • • 30mm ±3 A d Ohmite Series MOX200 MOX300 Resistance Range Ohms 100K to 1,500M 100K to 2,500M Power @25°C 0.25W

SP10103

Contextual Info: O PLESSEY ECL 10,000 SERIES SEMICONDUCTORS SP10103 Q U A D 2 -IN P U T OR GATE A ll input and o u tpu t ca b le s to the scope are e qual len g th s o f 50*ohm coaxial cable. W ire length should be < s inch from T P jn to in p u t pin and TPout to o u tpu t pin.

SGA-5486

Abstract: SGA-5486-TR1 SGA-5486-TR2
Contextual Info: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

TRANSISTOR BI 243

Abstract: TRANSISTOR BI 243 SGA-6589 SGA-6589 EDS-101268
Contextual Info: Product Description SGA-6589 Stanford Microdevices’ SGA-6589 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to 50 GHz.

SGA-5225

Contextual Info: Preliminary Product Description SGA-5225 Stanford Microdevices’ SGA-5225 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT